本研究為透過XRD、SEM、PL、EPR、LCR儀表與阻抗分析儀，探討在還原氣氛下燒結之不同劑量比的Mn摻雜對CaZrO3之顯微結構、缺陷及其電性之影響。摻雜Mn能顯著的提升坯體之緻密度，且因離子半徑較小將取代B位置的Zr，使得晶格常數與體積明顯下降。各樣品之介電常數值與損耗皆隨著頻率上升而快速收斂，並於高頻下(10kHz)趨近於穩定常數值，此為空間電荷極化所致。室溫下，摻雜的Mn作為受體與晶粒內部單離子化氧空缺、雙離子化氧空缺形成缺陷對，缺陷對的形成能有效抑制電子與載子之移動能力，使室溫下之介電損耗對頻率圖譜亦隨著Mn的摻雜逐漸平坦化，而未摻雜的樣品於低頻下具較高的介電損耗，則為單離子化之氧空缺所致。高溫下，氧空缺於晶界處產生正電位之施體界面，並因靜電吸引力使得Mn偏析而形成缺陷對。摻雜0mol%與0.2mol%Mn的樣品於高溫下介電損耗鬆弛峰之活化能分別為1.15eV與0.85eV，且Z''與M''部分重合外，tand之鬆弛峰易於晶界處響應，其可歸因於氧空缺遷移之長程導電的特性，因此在直流偏壓下將可觀察出另一弛豫現象產生。至於，0.5mol%的樣品則因缺陷對對氧空缺之束縛力較強，使介電損耗與溫度之關係呈一單調性，且Z''與M''明顯分離，說明其導電的特性與載子之短程遷移相關，因此直流偏壓對其影響不大。

The effects of Mn addition (0mol%, 0.2mol%, and 0.5mol%) on the microstructures, defect chemistry and electrical properties of CaZrO3 sintered under N2 atmosphere were investigated by XRD, SEM, PL, EPR, and LCR meter. The addition of Mn not only promoted the densification of CaZrO3 but enhanced the concentration of oxygen vacancy which resulted in the formation of defect pairs. This type of defect pair confined the mobilities of electrons and charge carriers so that the dielectric loss was significantly suppressed for the Mn-doped samples. However, the high dielectric loss for the undoped sample at low frequency was attributed to the existence of single-charged oxygen vacancy. At high temperatures, the oxygen vacancies migrated and piled up at the grain boundary region, led to the formation of donor-type grain boundaries. The dielectric properties were dominated by the movement of the doubly-ionized oxygen vacancy. The activation energies of dielectric relaxation for the undoped and 0.2 mol% Mn added samples were 1.15 eV and 0.85 eV, respectively. Nevertheless, the dielectric properties for the sample doped with 0.5 mol% Mn showed monotonously independent with temperature, which can be explained by the oxygen vacancies were strongly bound by the defect pairs.

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