本論文研究分成兩部分，第一部分探討以HfO2作為MIS結構中的絕緣氧化層，使用爐管（Furnace）及快速退火爐（RTA）作退火。由實驗結果可知，無論是以爐管還是RTA作退火，若退火溫度提升，薄膜的結晶性會較好，介電常數值（κ）提高，並降低氧化層中的缺陷，減少VFB的偏移量，而漏電流並無明顯的變化。而若HfO2製程時的氧壓比例提升，退火後結晶性會變好，介電常數值提高而漏電流降低，對VFB則無太大的影響。與爐管退火相比較，HfO2薄膜以RTA作退火有較好的結晶性、較低的漏電流、VFB偏移量少以及較高的介電常數。
第二部分探討以HfxSi1-xO2作為MIS結構中的絕緣氧化層。電子能譜儀（HRXPS）分析中發現，退火溫度愈高Hf 4f軌域之訊號峰會往鍵結能高處偏移。除了H20S80外，其它成分之漏電流密度隨退火溫度上升而下降，VFB的偏移量則隨退火溫度上升而減少。當矽酸鉿中矽原子比（Si/(Hf+Si)）增加時，HRXPS分析中Hf4f、Si2p、O1s三軌域之訊號峰會往鍵結能高處偏移。在矽原子比（Si/(Hf+Si)）為30%~70%之間，漏電流大小則是隨矽原子比例上升而下降。當矽酸鉿成分為H30S70時，有比其他成分的漏電流最低，VFB的偏移量亦是成分條件中最小的。

The first part of this thesis is to investigate the property of MIS structure by employing a sputtered HfO2 as the insulating layer. The high temperature annealed specimens, regardless of anneal method (Furnace or RTA), had better crystallization of HfO2, higher dielectric constant value (κ), less defects and flatband voltage （VFB）shift, but high annealing temperature did little influence on leakage current density. The HfO2, deposited with high oxygen ratio, exhibited better crystallization, higher dielectric constant value (κ) and less leakage current. But oxygen ratio did little influence on VFB value. As compared with furnace annealing, the HfO2 with RTA process had better crystallization, lower leakage current, less VFB shift and higher dielectric constant.
The second part is to investigate the property of hafnium silicates（HfxSi1-xO2） as used as an insulating layer in a MIS structure. By increasing the annealing temperature, the Hf 4f signals shifted to higher binding energy. The high temperature annealed specimens exhibited relatively low leakage current and less VFB shift, excluded the H20S80. Furthermore, ,the Hf 4f, Si 2p and O 1s signals shift to higher binding energy as the SiO2 fraction increased. As the SiO2 fraction of hafnium silicates was within 30% - 70%, the leakage current reduced. It was observed that H30S70 exhibited the least leakage current and VFB shift among all the specimens.

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