本篇論文主要分別介紹兩大部分，第一部分將介紹新開發的微波介電材料；第二部分將設計一濾波器，模擬於不同基板上的微波特性。
第一部分首先介紹BaNi2(VO4)2陶瓷之微波介電特性，接著使用與Ni2+ (0.69Å)離子半徑相近的Mg2+(0.72Å)對BaNi2(VO4)2中的Ni2+做取代，並探討Ba(Ni1-xMgx) 2(VO4)2 (x = 0–0.8)的微波介電特性與材料微結構。由實驗得知，當取代比例為x = 0.6，且燒結溫度在990oC時有良好的微波介電特性，εr ~11.2, Q×f~51,400 GHz, τf ~ –52.8 ppm/°C。
第二部分將設計一操作約在2.45GHz的濾波器。主體架構為U型共振器，為了改善頻率響應，採用Source-Load coupling的耦合方式，使其能產生一傳輸零點，以及在U型共振器內部加入一開路殘段以期能有短路的特性。最後，我們將電路模擬在FR4、Al2O3、Ba(Ni0.4Mg0.6)2(VO4)2基板上，並分析其頻率響應。

In order to obtain a novel low-temperature ceramics, the microwave dielectric properties of Ba(Ni1-xMgx)2(VO4)2 (x = 0 – 0.8) ceramics had been investigated. The experimental results show that BaNi2(VO4)2 has the best properties at sintering temperature 930℃ for 4 hours, with ε_r~9.0, Q×f~ 18,300 GHz, and τf ~－66.2 ppm/℃. Then the Ni2+ from the BaNi2(VO4)2 had been substituted by Mg2+, at x = 0.6, where the ε_r~11.2, Q×f~51,400, τf ~－52.8 ppm/℃ at the sintering temperature of 990℃ for 4 hours. Also, we designed a bandpass filter on FR4、Al2O3、Ba(Ni0.6Mg0.4)2(VO4)2 substrates. According to the results of simulation, the performance of the filter was improved by using low-loss dielectric ceramics as the substrate.

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