本研究主要利用錫蒸氣氧化法(CVD)合成氧化錫奈米線，並利用不同的製程條件，以掃描式電子顯微鏡觀察（SEM）觀察其外觀狀態。以XRD（Ｘ 光繞射分析）分析合成之氧化錫奈米線，確定此奈米線為二氧化錫（SnO2）之結構無誤，並以穿透式電子顯微鏡（TEM）觀察其內部結晶構造，並經由計算可得知其晶格常數　a = 4.73 Å、 c = 3.17 Å。
　　以氧化錫奈米線之I-V特性分析，及其電阻值的量測，做為一氧化碳（CO）氣體感測器的依據。實驗結果顯示由於擁有極大的表面積，氧化錫奈米線對於250 ppm CO 感測之靈敏度高達 52 %，較氧化錫薄膜對於250 ppm CO 感測之靈敏度 37 % 高出甚多，故非常適用於檢測 CO 之氣體感測器。

SnO2 nanowires were synthesized using a direct gas reaction route and were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) , transmission electron microscopy (TEM) and Raman-scattering spectroscopy. XRD, SEM and TEM indicated that the products were tetragonal SnO2 nanowires with lattice parameters of a = 4.73 Å、 c = 3.17 Å. Three vibrational modes were observed in the Raman spectra of the samples.
According to the current-voltage (I-V) measurements, we know that the sensitivity of SnO2 nanowires is much higher than SnO2 thin film because of the high surface-to-volume ratio of nanowires.

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