本篇論文將會分為二大部分作介紹，第一部分為研究低溫燒結、低損耗微波介電陶瓷材料之微波介電性能；第二部分則是使用三種不同基板設計2x2陣列天線，並分析模擬與實作之結果。
首先第一部分為Na5-xAgxTb(MoO4)4 (x= 0–0.09)陶瓷之微波介電特性，純相的Na5Tb(MoO4)4陶瓷在燒結溫度590oC下持溫4小時，可得最佳微波介電特性r ~ 7.6、Qf ~ 35,300 GHz和f ~ –26.7 ppm/oC；具有微量替代的Na4.93Ag0.07Tb(MoO4)4陶瓷在燒結溫度530°C下持溫4小時，可得最佳微波介電特性r ~ 8.51、Qf ~ 53,900 GHz和f ~ –24.9 ppm/°C；KLa(MoO4)2陶瓷之微波介電特性，在燒結溫度820oC下持溫4小時，可得最佳微波介電特性r ~ 9.63、Qf ~ 50,100 GHz和f ~ –75.7 ppm/oC。研究顯示除了相對密度和微觀結構外，填充率、鍵離子度、晶格能和鍵能在控制微波頻率下陶瓷之介電性能方面也起著至關重要的作用。
第二部分為使用HFSS軟體設計一應用於毫米波頻段(介於26.5 ~ 28.5 GHz)的2x2陣列天線，並將模擬電路實作於FR4、Al2O3及Na4.93Ag0.07Tb(MoO4)4三種基板上，結果顯示具低介電損耗的陶瓷材料能提升天線之表現。

Microwave dielectric ceramic materials Na5-xAgxTb(MoO4)4 (x= 0–0.09) and KLa(MoO4)2 were prepared using the conventional solid-state method. This study investigated the intrinsic and extrinsic factors affecting the microwave dielectric properties of these ceramic materials. The Na5-xAgxTb(MoO4)4 (x = 0.07) ceramic, sintered at 530°C for 4 hours, exhibited r ~ 8.51, Qf ~ 53,900 GHz, and f ~ –24.9 ppm/°C; while the KLa(MoO4)2 ceramic, sintered at 820°C for 4 hours, demonstrated r ~ 9.63, Qf ~ 50,100, and f ~ -75.7 ppm/°C. Additionally, both Na5-xAgxTb(MoO4)4 (x= 0–0.09) and KLa(MoO4)2 ceramic materials showed good chemical compatibility with aluminum and silver electrodes, making them promising candidates for ultra-low temperature co-fired ceramics (ULTCC) and low-temperature co-fired ceramics (LTCC) technologies. Based on these results, Na5-xAgxTb(MoO4)4 (x= 0–0.09) ceramics exhibit potential for ULTCC applications, such as array antennas in the millimeter-wave frequency range, due to their low-loss characteristics.

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