在日益普遍的可攜式電子產品中非揮發性記憶體是一個重要元件，而傳統的非揮發性記憶體與揮發性記憶體相比有較長存取時間與較高寫入電壓。近年來，許多新興非揮發性記憶體設計被提出，電阻式記憶體(ReRAM)是其中非常具有發展性的新興非揮發性記憶體。擁有比傳統非揮發性記憶體高的存取速度與較低的寫入電壓。但電阻式記憶體在可靠度方面仍然有寫入錯誤與高溫下資料維持錯誤的問題。本論文提出一高可靠度具溫度感知的記憶體控制器，其中提出溫度感知的操作模式隨溫度去做電阻式記憶體操作模式的調整，來降低資料維持錯誤的影響。和同時考量寫入錯誤與資料維持錯誤的自適性的寫入機制，針對每筆寫入資料做適合的錯誤校正碼選擇和寫入條件的調整。透過以上兩種機制達到電阻式記憶體在可靠度方面的提升。

Resistive random access memory (ReRAM) is a one of emerging non-volatility memories. Main advantages of ReRAM are low power, high speed, simple structure, and compatible with CMOS process. However, the ReRAM has reliability issues due to resistance instability at high temperature and failure during transition. The resistances of ReRAM cells drift toward intermediate state at high temperature. During write operation, some write failure errors occur because some ReRAM cells cannot change their resistances successfully. This thesis proposed a temperature-aware memory controller to deal with data retention errors and write failure errors.

The proposed temperature-aware memory controller uses a temperature-aware operation scheme and an adaptive write scheme to improve the reliability of ReRAM. The temperature-aware operation scheme adjusts the ReRAM operation setting according to temperature for reducing resistance instability at the high temperature. On the other hand, the adaptive write scheme considers write-failure and data retention issues simultaneously to improve ReRAM reliability. As a result, the adaptive write scheme improves the bit-error rate (BER) of ReRAM by 96.6%. Additionally, temperature-aware operation scheme reduces the BER of ReRAM by 72.2% at 125°C. The proposed temperature-aware controller reduces the BER of ReRAM by 88.2% at 125°C.

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