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研究生：	廖哲宏 Liao, Che-Hong
論文名稱：	應用於IEEE802.11a WLAN之5.7GHz CMOS射頻接收機及功率放大器RFICs 5.7GHz CMOS RF Receiver And PA RFICs For IEEE802.11a WLAN Applications
指導教授：	莊惠如 Chuang, Huey-Ru
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2003
畢業學年度：	91
語文別：	中文
論文頁數：	128
中文關鍵詞：	射頻接收機、功率放大器
外文關鍵詞：	RF receiver, PA, power amplifier
相關次數：	點閱：115 下載：7
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本論文以TSMC 0.18mm 1P6M CMOS 製程來研製應用於802.11a WLAN 之5.7GHz CMOS 接收機與功率放大器RFICs。接收機規劃上，RF 為5.725~5.825GHz，經5.265~5.325GHz本地振盪器降至中頻480MHz。本地振盪訊號由一5GHz LC tank CMOS VCO (0.25mm)整合設計之PLL 頻率合成器模組提供。RFIC 晶片採用打鎊線至FR-4 基板上進行量測。CMOS RF 接收機之電流共用低雜訊放大器增益為11dB，雜訊指數為4.2dB，input P1dB 為-11dBm；主動雙端平衡混波器轉換增益為11.06dB，雜訊指數12.8dB input P1dB 為-16.4dBm；L-C tank 壓控振盪器在0~1.8V 控制輸出頻率為5099~5242MHz，經鎖頻後，相位雜訊為-90.8dBc/Hz@100KHz；兩級A 類CMOS 功率放大器頻率響應偏移至5.98GHz 左右，增益為10.4dB，output P1dB 約12.5dBm。5GHz 頻率合成器模組(內含5GHz CMOS VCO)，參考頻率為1MHz，通道最小解析度為4MHz，頻道跳躍20MHz 時，settling time 約71.3ms，突波與載波比約-58dBc 。
在CMOS RF 接收機整合測試中，包含CMOS LNA、mixer 與頻率合成器模組並置入RF、IF 帶通濾波器。整體轉換增益為19.1dB，雜訊指數為6.6dB，input P1dB約-30.8dBm。在QPSK、18Mbs OFDM 測試訊號下，EVM 值為2.57%，64QAM、54Mbs OFDM 測試訊號下，EVM 為1.96%。
本論文並有研製0.25mm 5.7GHz CMOS 低雜訊放大器與混波器及0.18mm5GHz CMOS 可切換電容調整式之壓控振盪器(列於附錄)

This thesis presents the development of 5.7 GHz CMOS RFICs for the IEEE802.11a WLAN RF receiver and a 5.7 GHz two stage class-A CMOS PA in TSMC standard 0.18mm CMOS process. The CMOS RF receiver includes a differential LNA with gain control, an active double-balanced mixer, and an L-C tank CMOS VCO. The RF is from 5.725 to 5.825 GHz, the LO is from 5.265 to 5.325GHz and the IF is at 480MHz. The LNA exhibits a gain of 11dB, noise figure of 4.2dB and input P1dB of -11dBm. The mixer exhibits a conversion gain of 11.06dB, noise figure of 12.8dB and input P1dB of –16.4dBm. The L-C tank CMOS VCO has an output frequency from 5099 to 5242MHz with -90.8dBc/Hz@100KHz phase noise. The VCO is used in a designed 5-GHz frequency synthesizer. The synthesizer with a spur below 58dBc has a settling time of 71.3ms for 20MHz step. The 5.7-GHz CMOS RF receiver (with the frequency synthesizer) exhibits a conversion gain of 19.1dB, noise figure of 6.6dB, input P1dB of –30.8dBm. For the digital modulation measurement, a 5.744MHz 802.11a 18Mbps and 54Mbps OFDM signal are applied to the receiver. The measured EVM is about 2.57%(QPSK) and 1.96%(64QAM).
The measured frequency response of the two-stage class-A CMOS PA shifts from 5.75GHz to 5.98GHz. The PA exhibits a gain of 10.4dB and output P1dB of 12.5dBm. Also a 5.7GHz 0.25-mm CMOS LNA and mixer and a 5GHz 0.18-mm CMOS VCO with switched capacitance are prsented in appendix.

第一章緒論
第二章5.7GHz CMOS 差動增益控制之低雜訊放大器(TSMC
0.18mm)
2.1 疊接低雜訊放大器( cascode LNA).................................................5
2.2 電流共用之低雜訊放大器介紹.....................................................9
2.2.1 反向器形式之電流共用低雜訊放大器(Inverter Type LNA) ..9
2.2.2 兩級共源放大器疊接之電流共用低雜訊放大器...............10
2.2.3 兩級共源極放大器疊接之電流共用低雜訊放大器應用...12
2.3 CMOS 低雜訊放大器雜訊指數分析...........................................14
2.3.1 低雜訊放大器電路分析架構...............................................14
2.3.2 雜訊模型推導.......................................................................14
2.4 5.7GHz CMOS 差動增益控制之低雜訊放大器設計與製作......17
2.4.1 設計流程...............................................................................18
2.4.2 模擬與量測結果...................................................................21
2.4.3 結果與討論...........................................................................23
第三章5.7GHz CMOS 雙端平衡式混波器(TSMC 0.18mm)
3.1 簡介...............................................................................................24
3.2 主動平衡式混波器.......................................................................27
3.3 5.7GHz CMOS 雙端平衡式混波器設計與製作..........................35
3.4 模擬與量測結果...........................................................................38
3.5 結果與討論...................................................................................38
第四章5GHz CMOS 壓控振盪器(TSMC 0.25mm)及應用在頻率合成
器
之設計
4.1 簡介...............................................................................................42
4.2 L-C tank CMOS 壓控振盪器架構分析.........................................42
4.2.1 L-C 諧振(L-C tank)振盪器操作原理....................................43
4.2.2 L-C 諧振(L-C tank)振盪器相位雜訊....................................44
4.3 5GHz CMOS L-C tank 壓控振盪器...............................................49
4.3.1 設計與製作流程...................................................................49
4.3.2 模擬與量測結果...................................................................54
4.3.3 結果與討論...........................................................................57
4.4 CMOS VCO 之5GHz 頻率合成器的設計...................................57
4.4.1 頻率合成器架構與原理.......................................................57
4.4.2 頻率合成器元件選擇與規劃...............................................58
4.3.3 系統設計...............................................................................64
4.5 鎖相迴路相位雜訊來源...............................................................68
4.5.1 相位雜訊來自輸入參考訊號...............................................68
4.5.2 相位雜訊來自VCO..............................................................69
4.6 頻率合成器特性量測...................................................................70
4.7 頻率合成器結果與討論...............................................................74
第五章5.7GHz CMOS 功率放大器(TSMC 0.18mm)
5.1 簡介...............................................................................................75
5.2 功率放大器設計方法...................................................................76
5.2.1 偏壓點的選擇.......................................................................76
5.2.2 負載線理論(Load Line Theory)求輸出功率等位線..............79
5.2.3 負載調整法(Load-Pull Method)..............................................83
5.3 5.7GHz 兩級A 類CMOS 功率放大器(TSMC 0.18mm) ..............87
5.3.1 設計流程與架構簡介...........................................................87
5.3.2 模擬與量測結果...................................................................90
5.3.3 結果討論與...........................................................................92
第六章5.7GHz CMOS 接收模組整合量測與結論
6.1 5.7GHz CMOS 射頻接模組整合量測電路簡介..........................93
6.2 5.7GHz RF 帶通濾波器量測........................................................94
6.3 480MHz 中頻帶通濾波器量測.....................................................95
6.4 整合特性量測...............................................................................96
6.5 數位調變訊號量測.......................................................................98
6.5.1 向量訊號產生儀/向量訊號分析儀......................................98
6.5.2 接收模組數位調變量測.......................................................99
6.6 結果與討論................................................................................. 102
第七章結論
參考文獻................................................................................................. 105
附錄A 5.7GHz 0.25mm CMOS 低雜訊放大器與混波器
A.1 簡介............................................................................................ 108
A.2 5.7GHz CMOS 電流共用之單端低雜訊放大器........................ 108
A.2.1 設計流程............................................................................ 109
A.2.2 模擬與量測結果................................................................ 111
A.3 5.7GHz CMOS 電流抽出(Current Bleeding)之單端平衡混波器113
A.3.1 設計流程............................................................................113
A.3.2 模擬與量測結果................................................................ 115
A.4 結果與討論................................................................................ 117
附錄B 5GHz 0.18mm CMOS 壓控振盪器
B.1 5GHz 0.18mm CMOS 壓控振盪器.............................................. 118
B.1.1 設計流程............................................................................. 118
B.1.2 模擬與量測結果.................................................................120
B.1.3 結果與討論.........................................................................122
B.2 5GHz 0.18mm 可切頻之CMOS 壓控振盪器............................ 123
B.2.1 設計流程............................................................................. 123
B.2.2 模擬與量測結果................................................... 125
B.2.3 結果與討論.........................................................................128
                                    

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校外：2003-07-10公開

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