摩爾定律(Moore’s law)，由 intel創始人Gordan Earle Moore提出。自1980年以來，半導體元件產業的發展遵循著Moore’s law不斷前進。儘管如此，隨著近年Moore’s law 的漸緩，找尋具有更低的開關能量,更高的元件效率及邏輯元件密度成為研究的重要指標。其中，磁力便是其中一個重要發展方向。
本研究使用磁電開關 (Magnetoelectric switching)透過加入偏壓將電壓訊號轉換為自旋訊號，並透過巨磁阻 (Giant Magnetoresistance)將自旋訊號透過電阻值讀出，目的在取代單純使用電流控制的邏輯元件以達到低的啟動電壓及較小的漏電流且同時具有邏輯元件(Logic device)與記憶體元件(Memory device)的特性。
製程上使用脈衝雷射沉積技術(Pulsed Laser Deposition, PLD)沉積高品質的磁電耦合層(Magnetoelectric layer),鐵電層(Ferromagnetic layer)以及巨磁阻結構，再利用感應耦合電漿蝕刻技術(Reactive ion Etching, RIE)通過氬離子(Ar)的撞擊，蝕刻元件形狀，最後沉積鉑(Pt)做為電極以及保護層。
各製程結束後透過原子力顯微鏡(Atomic Force Microscope, AFM), 穿透式電子顯微鏡(Transmission electron microscope, TEM), 聚焦電子束(Focused Ion Beam, FIB), 能量散射X射線譜(Energy-dispersive X-ray analysis, EDS) 做薄膜量測，透過磁光克爾效應(Magneto-optic Kerr effect, MOKE) 量測磁滯曲線，透過探針及混和訊號示波器量測元件電性。
本論文著重在元件的製造與排除製程上的困難，並針對其結果進行分析與討論。

Moore’s Law, which is proposed by Interl founder “Gordan Earle Moore. Since 1980, the development of the semiconductor device industry has followed Moore’s Law. However, as the Moore’s law growing slowly, finding a device with lower switching energy, higher efficiency and higher device density has become one of the most important indicators. Magnetic force driving device is one of the important development directions.
This study is about combining the magnetoelectric switch and Giant Magnetoresistance into a device which is driving by magnetic force. Magnetoelectric switch coverts the input voltage into spin signal. Then read the signal through the resistance value which changing by Giant Magnetoresistance. This device has low driving voltage, small leakage current and having the characteristics both of logic device and memory device.
About the fabrication process we are using Pulse Laser Deposition (PLD) deposits high-quality magnetoelectric layer, ferromagnetic layer and giant magnetoresistance structure. After deposition, we etch the device into the shape of double cross through Reaction-ion Etching system which impact the material with argon ions. In the end, we deposit the platinum as the electrode and the protective layer.
After each process, we measure the layer of device quality using Atomic Force Microscope (AFM), Transmission electron microscope (TEM), Focused Ion Beam (FIB), Energy-dispersive X-Ray analysis (EDS), X-Ray Diffractometer (XRD), X-Ray Reflection meter (XRR). Measure the magnetic properties by Magnetic force microscope (MFM) and Magneto-Optical Kerr Effect (MOKE).
In this research we focus on the fabrication process and the solutions of the difficulties when we manufacture and analyze and discuss the result.

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