本研究中利用溶膠凝膠法在ITO基板上塗佈 MgNb2O6薄膜並利用電子束蒸鍍法鍍製Al金屬上電極，製作出金屬-絕緣層-金屬(MIM)結構的平面電容器。本實驗分成兩部分，第一部分探討MgNb2O6介電薄膜在不同退火溫度下的物性與介電特性的關係。由實驗可知，在大氣下退火500℃時MgNb2O6為非晶薄膜，介電常數約為45，介電損耗0.08，漏電流密度約在2×10-7A/cm2左右(外加偏壓1 V時)，且具有良好透光性，平均穿透率80%，光能隙大小為3.97 eV。之後研究於不同退火氣氛下成長MgNb2O6薄膜的物性與介電特性之間的表現，由實驗可知，在氧氣氣氛下退火可獲得最小介電損耗，我們也建立了介電損耗對頻率的等效模型，評估其作為薄膜電晶體之透明介電薄膜及MIM電容介電層之可行性。
在第二部分，使用Al電極和MgNb2O6薄膜作成MIM結構的電阻式記憶體。根據實驗結果，當電極退火200℃，限制電流在0.1 A時具有雙極性電阻轉換特性，之後比較元件在不同氣氛下退火與大氣下退火的電阻轉換特性差異和高低電阻值分佈等特性，從中找出元件的漏電流傳導機制為空間電荷限制電流轉換機制。我們並藉由二次離子質譜儀的縱深分析和漏電流與溫度之相依性推測元件之電阻轉換機制為導電燈絲機制，導電燈絲由氧空缺所組成。

In this study, to produce a metal - insulator - metal (MIM) structure of the planar capacitor, the sol-gel method was used for coating MgNb2O6 thin film on the indium tin oxide (ITO) coated substrates and aluminum metal top electrode coated by electron beam evaporation. The experiment was divided into two parts.
First, we discussed physical properties and dielectric properties of MgNb2O6 thin films annealing at different temperatures. The experiment showed that MgNb2O6 thin film annealed at 500℃ would be amorphous, which had excellent transparency that its average transparency was 80%, optical band gap size being about 3.97 eV. It also had great electric characteristic having the lowest dielectric loss 0.08 and well dielectric constant being about 45，leakage current density 2×10-7 A/cm2. Followed the result, treating MgNb2O6 film with different annealing atmosphere was investigated for physical properties and dielectric properties comparing with air. The experiment showed that annealing in an oxygen atmosphere obtain the minimum dielectric loss, we also have established the equivalent circuit model for the dielectric loss versus frequency and evaluated the feasibility of applying on transparent thin film transistors and the dielectric layer of MIM capacitor.
Second, random access memory devices were fabricated as a MIM structure with an electrode area of 0.5 mm × 0.5 mm. According to the experimental results, the bipolar switching behavior was observed repeatedly with the application of an electrical forming process when top electrode annealing at 200℃, current compliance 0.1 A. The leakage current was followed space-charge-limited-current (SCLC) mechanism, and the resistive switching behavior, according to the analysis of Secondary ion mass spectrometry (SIMS) and temperature dependence of current, should followed the filament theory and the filament was composed by oxygen deficiency.

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