本論文以製程方法簡單且成本低廉的電鍍方法鍍製二硒化銅銦鋁(CuInAlSe2
電鍍CIAS使用定電壓電鍍法進行實驗: )太陽能電池之主吸收層。本實驗採取四元共電鍍的方法製備CIAS薄膜，並藉由改變不同的環境參數鍍製出Cu:(In+Al):Se比例1:1:2，且表面形貌平坦，結晶品質良好的薄膜。
使用循環伏安法選定鋁還原電位的範圍後，調變電壓抓取最適合電鍍CIAS的電壓值。再依序調整溶液中個別離子濃度。定電壓電鍍法可以製備出成分比例良好的薄膜，缺點是附著力不佳。
在定電壓電鍍環境下於溶液中添加附著劑-十二烷基硫酸(SDS)，得到附著力良好、表面平坦以及二次相減少的薄膜。電鍍完成的薄膜利用SEM、EDS、XRD、Raman、UV-VIS等儀器作量測分析。此研究中，我們成功以電鍍法製備出比例良好、表面平坦、鋁含量高的CIAS薄膜。
並分別調變銦或鋁的濃度，均可以製備出鋁與銦含量不同比例的CuInAlSe2薄膜，量測不同x(Al/Al+In)的薄膜光能隙的改變。

In this study, the thin films of CuInAlSe2 solar cell were grown by using electrodeposition technique. In this study, CuInAlSe2 were fabricated by co-electrodeposition, and the composition ratio was excepted to come to
Cu:(In+Al):Se=1:1:2 by changing different parameter，the thin films of CuInAlSe2 with smooth morphology and great crystal quality.
First of all, we chose the reductive voltage of aluminum by Cyclic Voltammetry, and we changed the voltage to find the appropriate voltage of producing CuInAlSe2.And then, we changed the concentration of different element. Great composition of thin films were produced, but adhesion of thin films were poor.
The great adhesion of thin films with smoth morphology and few secondary were produced after the addition of SDS. The properties of thin films deposited from the electroplated system were investigated by various techniques, including SEM、EDS、XRD、Raman and UV-VIS, and the analysis results are discussed in the following chapter. In this study, we succeed to fabricate thin films of CuInAlSe2 with great composition、smoth morphology and enrichment of Al.
Eventually, two set of thin films with different ratio of Al and In were prepared, and to measure the change of band gap with the change of x(Al/Al+In).

[1] 魯台營 “太陽能發電台灣能源永續利用的關鍵”,2009
[2] 楊德仁“太陽能電池材料”,2009
[3] 鄭名山“太陽能發電簡介”,物理雙月刊(廿九卷三期) 2007
[4] D. Braunger, D. Hariskos, G. Bilger, U. Rau, H.W.
Schock,“Influence of sodium on the growth of
polycrystalline Cu(In,Ga)Se2 thin films”. Thin solid
films, 361-362:p.161-166, 2000.
[5] M. Ruckh, D. Schmid, M. Kaiser, R. Schäffler, T. Walter,
H. W.Schock,”Influence of Substrates on the Electrical
Properties of Cu(In,Ga)Se2 Thin Films”. 1st World
Conference on Photovoltaic Energy Conversion,p.156-159,
1994.
[6] Ramanathan, K., Contreras, M.A., Perkins, C.L., Asher,
S.,Hasoon, F.S., Keane, J., Young, D., Romero, M.,
Metzger, W.,Noufi, R., Ward, J., Duda, A. “Properties of
19.2%efficiency ZnO/CdS/CuInGaSe2 thin-film solar
cells”.Prog Photovolt. Res. Appl. 11, 225–230, 2003.
[7] B. Tell, J.L. Shay, H.M. Kasper,” Electrical Properties,
Optical Properties, and Band Structure of CuGaS2 and
CuInS2”,J. Appl. Phys. 43,2469, 1972.
[8] Repins, I., Contreras, M.A., Egaas, B., DeHart, C.,
Scharf,J., Perkins,C.L., To, B., Noufi, R. 19.9%-
efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill
factor. Prog.Photovolt. Res. Appl. 16, 235–239 , 2008.
[9] S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W.
Birkmire,and W. N. Shafarman , High-efficiency solar
cells based on Cu(InAl)Se2 thin films. Appl. Phys. Lett.
81, 1350, 2002.
[10]J. Ouerfelli, M. Regragui, M. Morsli, G. Djeteli, K.
Jondo,C.Amory,G.Tchangbedji, K. Napo and J.C.
Bernede,”Properties of ZnO thin films deposited by
chemical bath deposition and post annealed”,J. Phys. D:
Appl. Phys. 39,71pp.1954-1959, 2006.
[11]詹岳霖“硒化銅銦鎵薄膜太陽能電池中緩衝層的製備與特性分析”
國立東華大學光電工程研究所碩士論文,2007.
[12]S.O. Kasap, “Optoelectronics and photonics: principles
and Practices”,Prentice Hall published, pp.255-273,
2001.
[13]洪永杰,”III-V族半導體太陽能電池專利檢索與分析報告”,2005-06-01.
[14]M.A. Nicolet “Diffusion Barriers in Thin Films”, Thin
Solid Films,152, 1978.
[15]蔡進譯, “高效率太陽電池-從愛因斯坦的光電效應談起”, 物理雙月刊,
二七卷, 五期, 2005 年10 月.
[16]P.K. Nair, M. T. S. N., V.M. Garcia, O.L. Arenas, Y.
Pena,A.Castillo,I.T.Ayala,O. Gomezdaza, A. Sanchez, J.
Campos and R. S. H. Hu,“Semiconductor thin films by
chemical bath deposition for solar energy related
applications”,Solar Energy Materials and Solar Cells 52,
pp.313-344 , 1998.
[17]Jack L.Stone,Photovoltaics:”Unlimited Electrical Energy
From the Sun”,Issue of Physics Today, P.1-7, 1993.
[18]S. M. Sze,” Semiconductor Devices Physics and
Technology”2nd ed,John Wiley & Sons New York,
chap.9.5.2, 2002.
[19]蔡進譯, “高效率太陽電池-從愛因斯坦的光電效應談起”, 物理雙月刊,
二七卷, 五期, 2005 年10 月.
[20]S. P. Grindle, A. H. Clark, S. Rezaie-Serej, J. Mcneily,
L. L. Mcneily,“Growth of CuInSe2 by molecular beam
epitaxy”,Journal of Applied Physics, 51, 10,1980.
[21]R. A. Mickelsen and M. S. Chen,“High photocurrent
polycrystalline thin‐film CdS/CuInSe2 solar cella”
,Appl. Phys. Lett., 26, 5,1980.
[22]N. Romeo, V. Canevari, G. Sberveglieri, A. Bosio,
” Growth of Large-Grain CuInSe2 Thin Films by Flash-
Evaporation andSputtering. Solar Cells”, 16,pp.155-
164,1986.
[23]B. Pamplin and R. S. Feigelson,“Spray pyrolysis of
CuInSe2 and related ternary semiconducting compounds”
,Thin Solid Films, 60, 144,1979.
[24]D. Pottier and G. Maurin,“Preparation of polycrystalline
thin films of CuInSe 2 by electrodeposition”J. Appl.
Electrochem., 19,361,1989.
[25]R. K. Pandey, S. N. Sahu and S. Chandra,“Handbook of
Semiconductor Electrodeposition”, Marcel Dekker, Inc.,
New York, pp. 247,1996.
[26]胡啟章“電化學原理與方法”，五南圖書出版公司，2007.
[27]Soon Hyung Kang, Yu-Kyung Kim, Don-Soo Choi, Yung-Eun
Sung,”Characterization of electrodeposited CuInSe2 (CIS)
film”,Electrochimica Acta, 51,4433 ,2006.
[28]A. Kampmann, V.S., J. Rechid, R. Reineke-Koch,
” Large area electrodeposition of Cu(In,Ga)Se2. Thin
Solid Films”,361-362:p.309-313,2000.
[29]Naglaa Fathy, R.K., Masaya Ichimura,“Preparation of ZnS
thin films by the pulsed electrochemical deposition.”
Materials Science and Engineering B107: p. 271-276,
2004.
[30]M. E. Calixto, R. N. Bhattacharya, P. J. Sebastian, A.
M.Fernandez, S.A.Gamboa, R. N. Noufi,“Cu(In,Ga)Se2 based
photovoltaic structure by electrodeposition and
Processing”, Solar Energy Materials and Solar Cells,55:
p.23-29, 1998.
[31]Moller, H.J., “Semiconductors for solar cells”, 1993.
[32]許樹恩，吳泰伯,”X 光繞射原理與材料結構分析”, 中國材料學
會,新竹,p.169, 1996.
[33]汪建民,”材料分析”,中國材料科學學會, 1998.
[34]蘇炎坤,“二次離子質譜儀之分析與應用”, 科儀新知, 9, 9 (1988).
[35]金凱翔, 陳顧仁,謝慶宗,李易融, “電致變色元件之研製”,
崑山科技大學電機系專題報告. p. 1-50, 九十五年十二月.
[36]M.A. Martinez, J. Herrero,“Deposition of transparent and
conductive Al-doped ZnO thin films for photovoltaic
solar cells”M.T. Gutierrez, Sol. Energy Mater. Sol.
Cells 45, 75,1997.