近年來半導體產業的記憶體技術蓬勃發展，在眾多非揮發式記憶體(NVM)中，電阻式記憶體(RRAM)具有取代快閃記憶體的潛力。由於金屬橋接隨機存取記憶體(CBRAM)具有低功率消耗和高記憶窗等優點，因此尋找更適用於CBRAM的材料也是值得探討的議題。氮化鋁(AlN)擁有許多可應用於RRAM的特點，且在非高溫的製程下便具有良好的絕緣性，然而，將非晶相及[100]軸向之AlN應用於CBRAM的探討卻非常罕見。
本論文採用射頻濺鍍系統製備出不同軸向的AlN薄膜，在本論文的第一部份，詳細探討AlN薄膜的材料特性;在本論文的第二部分，將AlN薄膜作為CBRAM的固態電解質，並檢視元件的電性、穩定性以及變溫特性。對應於不同的應用考量，非晶相的AlN元件因具備高達3.12 × 106記憶窗而可以呈現出較低的位元錯誤率;另一方面，具有0.24伏特和-0.13伏特的低set/reset操作電壓之[002]軸向AlN元件則可滿足低功率消耗和高穩定度的需求。

In recent years, the memory technology of semiconductor industry has been well developed. Resistance random access memory (RRAM) has potential to replace FLASH memory position in the nonvolatile memory (NVM). Because conductive bridge random access memory (CBRAM) has advantage of low power consumption and high memory window, finding for more suitable material for CBRAM is also critical issue to be investigated. Aluminum nitride (AlN), a metal nitride has many features in RRAM application and exhibits good insulator property without high process temperature. Nevertheless, the amorphous and [100] oriented AlN thin films applied for CBRAMs have rarely been investigated.
In this study, different orientation AlN thin films are fabricated by ratio-frequency (RF) sputtering system. In the first part of this thesis, the detailed investigation of material characteristics in all AlN thin films is presented. In the second part of this thesis, the proposed AlN thin films are applied to the solid-electrolyte of CBRAMs. The electrical characteristic, reliability test, and temperature-dependent test of the devices are also examined. For application requirements, the amorphous AlN device shows low bit error rate with a high memory window of 3.12 × 106. On the other hand, the requirement for low power consumption and high stability is satisfied from [002] oriented AlN device with a low set/reset voltage of 0.24 V/-0.13 V.

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