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研究生：	黃俊瑞 Huang, Jun-Rui
論文名稱：	氮化鎵系列蕭特基接觸式氫氣感測元件之研究 Investigation of Hydrogen-Sensing GaN-Based Schottky Contact Devices
指導教授：	劉文超 Liu, Wen-Chau 許渭州 Hsu, Wei-Chou
學位類別：	博士 Doctor
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2007
畢業學年度：	95
語文別：	英文
論文頁數：	198
中文關鍵詞：	氫氣感測器、蕭特基二極體、白金、鈀、氮化鎵、絕緣層
外文關鍵詞：	Pd, Hydrogen sensor, Schottky diode, Pt, GaN, Insulator
相關次數：	點閱：74 下載：2
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在本論文中，我們研製一系列氮化鎵蕭特基接觸式的氫氣感測器元件，並以不同的觸媒金屬，像鈀和白金，製作成蕭特基接觸金屬，主要重點在於展示高靈敏度以及寬廣溫度操作範圍；另外，本文以不同高品質且薄的絕緣層，像二氧化矽和氮化矽，製作成金屬/絕緣層/半導體的蕭特基二極體式氫氣感測器，本文所提出元件是在空氣和氮氣環境下通入不同的氫氣濃度去研究其氫氣感測及響應特性。
首先，鈀金屬/氮化鎵半導體的蕭特基接觸式氫氣感測器被製作和研究，由於具有寬能隙及較好的熱穩定度的良好特性，在與傳統矽半導體所研製的感測器作比較之後，本文所提出氮化鎵為基底的金屬/半導體式的氫氣感測器在經過寬廣溫度圍展示較佳的偵測靈敏度和較大的蕭特基能障變化；另外，在與空氣環境下特性作比較，本文所提出鈀金屬/氮化鎵半導體的蕭特基元件在氮氣環境下展示較高的氫氣偵測能力及較大的蕭特基能障調變。
接著，白金金屬/二氧化矽絕緣層/氮化鎵半導體的蕭特基接觸式氫氣感測器被製作和研究，為了研究費米能階釘住效應對氫氣感測的影響，白金金屬/氮化鎵半導體的元件也一併被製作和比較，從實驗結果得知，在與白金金屬/氮化鎵半導體的元件作比較之後，本文所提出白金金屬/二氧化矽絕緣層/氮化鎵半導體的元件證實有較大的電流和蕭特基能障變化、在順偏或反偏之下有較高的氫氣偵測能力、以及較短的響應和恢復時間，因此，沒有絕緣層的存在，費米能階釘住效應對金屬/半導體的元件影響較嚴重而且會造成氫氣測偵測能力的下降。
最後，白金金屬/氮化矽絕緣層/氮化鎵半導體的蕭特基接觸式氫氣感測器被製作和研究，連同之前所提出的白金金屬/二氧化矽絕緣層/氮化鎵半導體的元件，在與其它已提出觸媒金屬/絕緣層/半導體的氫氣感測器作比較，本文所提出的兩個具有絕緣層的元件在經過寬廣溫度範圍均展示良好的氫氣感測特性；此外，兩個元件亦展示可再現性的響應，在與白金金屬/氮化矽絕緣層/氮化鎵半導體的元件作比較，白金金屬/二氧化矽絕緣層/氮化鎵半導體的元件在室溫空氣環境之下有較明顯的靈敏度變化的改善；另一方面，白金金屬/氮化矽絕緣層/氮化鎵半導體的元件在氮氣環境比在空氣下展示有較佳的高溫偵測特性以及改善氫氣吸附反應的活性，因此，以氮化鎵為基底具有高品質且薄之絕緣層的感測器能提供重大的潛在性，其多樣性的應用就是在特別高溫之下仍具有較高的氫氣靈敏度感測器並且可以整合光電感測器使其具有額外紫外光的偵測。

In this dissertation, we present a series of hydrogen-sensing GaN-based Schottky contact devices. The different catalytic metals, e.g., Pd and Pt, are used as the Schottky contact metals. The main concerns demonstrate the high hydrogen sensing performance and widespread operating temperature. In addition, the different high-quality thin insulators, such as SiO2 and SiNx, are used as the metal/insulator/semiconductor (MIS) Schottky diode hydrogen sensors. The hydrogen sensing and response characteristics of the studied devices under different-concentration hydrogen gases are investigated both in air and N2 atmospheres.
First, a Pd/GaN (MS) Schottky contact hydrogen sensor is fabricated and investigated. Due to the good properties of wide bandgap and superior thermal stability, the studied GaN-based MS-type hydrogen sensor exhibits the better detection sensitivity ratio and larger Schottky barrier height variations over a wide temperature range as compared with the conventional Si-based sensors. In addition, the studied MS device exhibits the higher hydrogen detection capability and larger Schottky barrier height modulation in N2 atmosphere in comparison with those in air.
Second, a Pt/SiO2/GaN (MIS) Schottky contact hydrogen sensor is fabricated and investigated. In order to study the influence of Fermi-level pinning effect and hydrogen sensing, the Pt/GaN MS device is also fabricated and compared. From experimental results, the studied MIS device manifests larger current and Schottky barrier height variations, higher hydrogen detection capabilities under either forward or reverse bias, and shorter hydrogen response and recovery times than that of the MS-type hydrogen sensor. Therefore, without the presence of the insulator layer, Fermi-level pinning effect is more serious for the MS device and results in the degradation of hydrogen detection.
Finally, a Pt/SiNx/GaN (MIS) Schottky contact hydrogen sensor is fabricated and investigated. Along with the studied Pt/SiO2/GaN MIS device, both studied MIS devices exhibit good hydrogen sensing performances over a wide temperature range as compared with other reported MIS-type hydrogen sensors. Furthermore, both studied MIS devices also exhibit reproducible responses. As compared with those of the Pt/SiNx/GaN (MIS) device, the improvements of sensitivity variation are more obvious for the studied Pt/SiO2/GaN (MIS) device at 300 K in an air atmosphere. On the other hand, the studied Pt/SiNx/GaN (MIS) device exhibits excellent performance for high-temperature detection and improved activity of hydrogen adsorption reaction in a N2 atmosphere than in air. Therefore, the GaN-based sensors with a high-quality thin insulator layer provide the great potential in a variety of applications of high hydrogen-sensitivity gas sensors especially at high temperature and integrated optoelectronic sensor structures for additional detection of UV radiation.

CONTENTS
摘 要 頁數
CONTENTS …………………………………………………………….I
LIST OF TABLES……………………………………………………..IV
LIST OF FIGURES…………………………………………………...VI
LIST OF SYMBOLS………………………………………………...XIII
Chapter 1 Introduction............................................................................. 1
1.1 Hydrogen sensors ................................................................................. 1
1.1.1 Demands of hydrogen energy and sensors ............................................ 1
1.1.2 Criteria and applications of hydrogen sensors ...................................... 2
1.1.3 Types of gas sensors .............................................................................. 3
1.2 Motivation and objective..................................................................... 8
1.2.1 For metal development ......................................................................... 8
1.2.2 For semiconductor development ........................................................... 8
1.2.3 For insulator development .................................................................... 9
1.2.4 Hydrogen sensing performance in air and N2 atmospheres .................. 9
Chapter 2 Experimental details ............................................................. 11
2.1 Devices preparation and fabrication .................................................11
2.1.1 Device structures ................................................................................. 11
2.1.2 Dry etching conditions of GaN ........................................................... 11
2.1.3 Growth conditions of the insulator layers ........................................... 12
2.1.4 Device fabrication ............................................................................... 12
2.2 Hydrogen sensing measurement ....................................................... 13
2.2.1 Hydrogen sensing system setup .......................................................... 13
2.2.2 Hydrogen sensing experiments ........................................................... 13
Chapter 3 Hydrogen sensing characteristics of a Pd/GaN (MS)
Schottky diode hydrogen sensor ...................................... 15
3.1 Investigation of hydrogen-sensing characteristics of a Pd/GaN
Schottky diode .................................................................................... 15
3.1.1 Introduction ......................................................................................... 15
3.1.2 Device fabrication ............................................................................... 16
3.1.3 Experimental results and discussion ................................................... 17
3.1.4 Summary ............................................................................................. 24
3.2 Comparison of hydrogen sensing characteristics for Pd/GaN and
II
Pd/Al0.3Ga0.7As Schottky diodes ....................................................... 26
3.2.1 Introduction ......................................................................................... 26
3.2.2 Device fabrication ............................................................................... 27
3.2.3 Experimental results and discussion ................................................... 28
3.2.4 Summary ............................................................................................. 35
3.3 Comparative study of hydrogen sensing characteristics of a
Pd/GaN Schottky diode in air and N2 atmospheres ........................ 36
3.3.1 Introduction ......................................................................................... 36
3.3.2 Device fabrication ............................................................................... 37
3.3.3 Experimental results and discussion ................................................... 38
3.3.4 Summary ............................................................................................. 49
Chapter 4 Hydrogen sensing characteristics of a Pt/insulator/GaN
(MIS) Schottky diode hydrogen sensor ............................ 50
4.1 Improved hydrogen sensing characteristics of a Pt/SiO2/GaN (MIS)
Schottky diode .................................................................................... 50
4.1.1 Introduction ......................................................................................... 50
4.1.2 Device fabrication ............................................................................... 51
4.1.3 Experimental results and discussion ................................................... 52
4.1.4 Summary ............................................................................................. 60
4.2 Comprehensive study of hydrogen sensing characteristics of a
Pt/SiNx/GaN Schottky diode in air and N2 atmospheres ................ 62
4.2.1 Introduction ......................................................................................... 62
4.2.2 Device fabrication ............................................................................... 63
4.2.3 Experimental results and discussion ................................................... 64
4.2.4 Summary ............................................................................................. 70
Chapter 5 Conclusions............................................................................ 72
5.1 Current-voltage characteristics ........................................................ 72
5.1.1 Comparisons of current-voltage characteristics for the studied Pd and
Pt/GaN MS devices and other reported hydrogen sensors........................... 72
5.1.1 Comparisons of current-voltage characteristics for the studied Pt/SiO2
and SiNx/GaN MIS devices and other reported hydrogen sensors .............. 72
5.2 Current-time transient responses ..................................................... 74
5.2.1 Comparisons of current-time transient responses for the studied Pd
and Pt/GaN MS devices and other reported hydrogen sensors .................... 74
5.2.2 Comparisons of current-time transient responses for the studied
Pt/SiO2 and SiNx/GaN MIS devices and other reported hydrogen sensors . 74
5.3 Hydrogen adsorption mechanisms ................................................... 75
5.3.1 The equilibrium adsorption analysis ................................................... 75
III
5.3.2 The kinetic adsorption analysis ........................................................... 76
Chapter 6 Future works ......................................................................... 78
6.1 Alloys of catalytic metal .................................................................... 78
6.2 Morphology and microstructure of catalytic metal ........................ 78
6.3 Morphology and microstructure of GaN semiconductor .............. 79
6.4 Insulator layers .................................................................................. 79
6.5 FET-type hydrogen sensors .............................................................. 80
6.6 Hydrogen sensing performances ...................................................... 80
6.7 Hydrogen adsorption mechanism analyses ..................................... 80
6.8 Applications of GaN based hydrogen sensors ................................. 81
IV
LISTS OF TABLES
Table 1.1 Comparisons of various gas sensor types. ................................................ 94
Table 1.2 Comparisons of different material properties. .......................................... 95
Table 2.1 Dry etching condition of GaN. .................................................................. 96
Table 2.2 Growth conditions of the (a) SiO2 and (b) SiNx insulator layers. ............. 97
Table 3.3.1 The pressure-dependent rate constant ( d k ) and the pressure-independent
rate constant ( i k ) values for the hydrogen adsorption process as a
function of temperature measured in different-concentration hydrogen
gases in air and N2 atmospheres............................................................... 98
Table 4.1.1 The increased current magnitude of the studied Pt/GaN (MS) and
Pt/SiO2/GaN (MIS) Schottky diodes measured under the atmospheric
pressure and when exposed to a 9970 ppm H2/air gas at 300 and 850 K.
The applied forward and reverse voltages are fixed at VF = 0.5 V and VR
= -2 V, respectively. .................................................................................. 99
Table 4.1.2 The pressure-dependent rate constant ( d k ) and pressure-independent rate
constant ( i k ) values of the studied Pt/GaN (MS) and Pt/SiO2/GaN (MIS)
Schottky diodes for the hydrogen adsorption process as a function of
temperature measured under different-concentration hydrogen gases in an
air atmosphere. ....................................................................................... 100
Table 4.2.1 The increased current magnitude of the studied Pt/SiNx/GaN (MIS)
Schottky diode measured under the atmospheric pressure and when
exposed to 9970 ppm H2/air and 10300 ppm H2/N2 gases at 300 and 850
K. The applied forward and reverse voltages are fixed at VF = 0.5 V and
VR = -2 V, respectively. .......................................................................... 101
Table 5.1.1 Comparisons of current-voltage characteristics for the studied Pd and
Pt/GaN MS devices and other previously reported hydrogen sensors. .. 102
Table 5.1.2 Comparisons of current-voltage characteristics for the studied Pt/SiO2 and
SiNx/GaN MIS devices and other previously reported hydrogen sensors.
................................................................................................................ 107
Table 5.2.1 Comparisons of current-time transient responses for the studied Pd and
Pt/GaN MIS devices and other previously reported hydrogen sensors. 110
Table 5.2.2 Comparisons of current-time transient responses for the studied Pt/SiO2
and SiNx/GaN MIS devices and other previously reported hydrogen
sensors. ................................................................................................... 115
Table 5.3.1 Comparisons of enthalpy ( ΔH° ) of hydrogen adsorption on the studied
devices.................................................................................................... 119
V
Table 5.3.2 Comparisons of activation energies for various studied devices. ........... 120
VI
LIST OF FIGURES
Figure 1.1 Schematic diagrams of catalytic bead gas sensors. .................................. 121
Figure 1.2 Schematic diagrams of electrochemical gas sensors. ............................... 122
Figure 1.3 Schematic diagrams of infrared gas sensors. ............................................ 123
Figure 1.4 Schematic diagrams of solid state (semiconductor) gas sensors. ............. 124
Figure 1.5 Schematic diagrams of field effect transistor gas sensors. ....................... 125
Figure 2.1 The schematic (a) device structure Ⅰ and (b) device structure Ⅱ. ...... 126
Figure 2.2 The procedures for device fabrication of the metal/semiconductor (MS)
Schottky diode. ........................................................................................ 128
Figure 2.3 The procedures for device fabrication of the metal/insulator/semiconductor
(MIS) Schottky diode. .............................................................................. 130
Figure 2.4 The schematic setup of hydrogen detection system. ................................ 131
Figure 3.1.1 A schematic diagram of the cross-section and top view of structure for
the studied Pd/GaN Schottky diode. ........................................................ 132
Figure 3.1.2 AES depth profiles of the Pd/GaN Schottky diode. .............................. 133
Figure 3.1.3 The logarithmic current-voltage (I-V) characteristics of the proposed
device at (a) 300 K and (b) 570 K respectively measured under the
atmospheric condition in air and exposed to different hydrogen
concentrations of 14, 50, 191, 980, and 9970 ppm H2 in air. ................... 134
Figure 3.1.4 A schematic diagram of hydrogen adsorption process. (a) The appearance
of the polarization layer, formed by hydrogen atoms trapped at the
catalytic metal and semiconductor interface. (b) The corresponding
schematic energy band diagram for the Pd/GaN Schottky diode in air and
upon exposing to hydrogen gases. ........................................................... 135
Figure 3.1.5 The relationship between the hydrogen detection sensitivity ratio and
hydrogen concentration at different temperatures for the Pd/GaN Schottky
diode. The applied forward bias was 0.5 V. ............................................. 136
Figure 3.1.6 The Schottky barrier height as a function of temperature with different
hydrogen concentrations for the Pd/GaN Schottky diode. ....................... 137
Figure 3.1.7 The corresponding Schottky barrier height change ratio ( bφ Δ / b
φ ) as a
function of hydrogen concentration at 300 to 570 K. The inset shows the
ideality factor (η ) as a function of hydrogen concentration at different
temperatures. ............................................................................................ 138
Figure 3.1.8 1 / ln( / ) og o I I as a function of 1/ 2
2
?
H P of the the Pd/GaN Schottky diode at
VII
different temperatures. The inset shows /(1 ) i i θ ?θ as a function of 1/ 2
H2 P
under atmospheric conditions at 300, 320, and 340 K, respectively. ....... 139
Figure 3.1.9 The logarithmic equilibrium constant ( e K ) as a function of the reciprocal
temperature. ............................................................................................. 140
Figure 3.1.10 The transient responses for different hydrogen concentration of 494,
980, 5040, and 9970 ppm H2 in air gases under the forward bias of 0.35 V
at 450 K. The inset shows the corresponding hydrogen adsorption time
constant ( a τ ) and initial rate of change in current (ΔI / Δt ). .................. 141
Figure 3.2.1 Schematic cross sections of (a) Pd/GaN and (b) Pd/Al0.3Ga0.7As Schottky
diodes. ...................................................................................................... 142
Figure 3.2.2 AES depth profiles of (a) Pd/GaN and (b) Pd/Al0.3Ga0.7As Schottky
diodes. ...................................................................................................... 143
Figure 3.2.3 Current-voltage (I-V) characteristics under different hydrogen
concentrations of (a) Pd/GaN and (b) Pd/Al0.3Ga0.7As Schottky diodes at
300 K. ....................................................................................................... 144
Figure 3.2.4 Current-voltage (I-V) characteristics under different hydrogen
concentrations of (a) Pd/GaN and (b) Pd/Al0.3Ga0.7As Schottky diodes at
450 K. ....................................................................................................... 145
Figure 3.2.5 A schematic diagram of hydrogen adsorption process. (a) Formation of a
polarization layer, formed by hydrogen atoms trapped at the catalytic metal
and semiconductor interface. (b) The corresponding schematic energy
band diagram for the Pd/GaN (AlGaAs) Schottky diode in air and upon
exposing to hydrogen gases. .................................................................... 146
Figure 3.2.6 Schottky barrier height as a function of hydrogen concentration in air at
300 K for Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes......................... 147
Figure 3.2.7 The specific Schottky barrier height variation ( b Δφ / H2 C ) (meV/ppm H2)
(%) as a function of hydrogen concentration at different temperatures for
Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes. ........................................ 148
Figure 3.2.8 1 / ln( / ) og o I I as a function of 1/ 2
2
?
H P of (a) Pd/GaN and (b)
Pd/Al0.3Ga0.7As Schottky diodes at 300, 320, and 340 K, respectively. .. 149
Figure 3.2.9 Logarithmic equilibrium constant ( e K ) as a function of the reciprocal
temperature. The inset shows the enthalpy of hydrogen adsorption ( ΔH° )
of Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes. .................................... 150
Figure 3.2.10 Response curves of a Pd/GaN Schottky diode under the introduction
and removal of a hydrogen gas of 9970 ppm H2 in air at different
VIII
temperatures. The applied forward voltage was 0.35 V. .......................... 151
Figure 3.2.11 Response curves of a Pd/Al0.3Ga0.7As Schottky diode under the
introduction and removal of a hydrogen gas of 9090 ppm H2 in air at
different temperatures. The applied forward voltage was 0.35 V. ........... 152
Figure 3.2.12 Hydrogen detection adsorption time constant ( a τ ) as a function of
temperature for Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes exposed to
9970 and 9090 ppm H2/air gases, respectively. Corresponding performance
of desorption time constant ( b τ ) is shown in the inset. ........................... 153
Figure 3.3.1 Schematic diagram of the cross-section and top view of structure for the
studied Pd/GaN Schottky diode. .............................................................. 154
Figure 3.3.2 The current-voltage (I-V) characteristics of the studied Pd/GaN Schottky
diode measured under the atmospheric condition and exposed to
different-concentration hydrogen gases balanced with air and N2 at 340
and 570 K. ................................................................................................ 155
Figure 3.3.3 Schematic diagram of hydrogen adsorption process. (a) The appearance
of the polarization layer, formed by hydrogen atoms trapped at the
catalytic metal and semiconductor interface. The corresponding schematic
energy band diagrams for the studied Pd/GaN Schottky diode upon
exposing to hydrogen gases in (b) air and (c) N2 atmospheres. ............... 156
Figure 3.3.4 The relationship between the forward hydrogen sensitivity ratio and
hydrogen concentration at 340, 450, and 570 K in (a) air and (b) N2
atmospheres. The applied forward voltage is fixed at VF = 0.5 V. ........... 157
Figure 3.3.5 The relationship between the reverse hydrogen sensitivity ratio and
hydrogen concentration at 340, 450, and 570 K in (a) air and (b) N2
atmospheres. The applied reverse voltage is fixed at VR = -2 V. ............. 158
Figure 3.3.6 The specific Schottky barrier height variation ( bφ Δ / H2 C ) (meV/ppm H2)
as a function of hydrogen concentration at 300 K. H2 C is the introduced
hydrogen concentration balanced with air or N2...................................... 159
Figure 3.3.7 1 / ln( / ) og o I I as a function of 1/ 2
2
?
H P for the studied Pd/GaN Schottky
diode caused by H2 in air and N2 atmospheres at 300, 320, and 340 K. .. 160
Figure 3.3.8 Logarithmic equilibrium constant ( c K ) as a function of the reciprocal
temperature. The inset shows the enthalpy of hydrogen adsorption ( ΔH° )
of the studied Pd/GaN Schottky diode in air and N2 atmospheres. ......... 161
Figure 3.3.9 The transient response curves of the studied Pd/GaN Schottky diode
under the introduction and removal of different-concentration hydrogen
IX
gases of 494, 980, and 9970 ppm H2 in air atmosphere under the forward
bias of 0.35 V at 340, 390, and 450 K. .................................................... 162
Figure 3.3.10 The transient response curves of the studied Pd/GaN Schottky diode
under the introduction and removal of different-concentration hydrogen
gases of 97, 980, and 10300 ppm H2 in a N2 atmosphere under the forward
bias of 0.35 V at 340, 390, and 450 K. .................................................... 163
Figure 3.3.11 The linear relationship between ln[1 ln( / ) / ln( / )] , I I I I g g eq ? and
measuring time t for the studied Pd/GaN Schottky diode with the
introduced different-concentration hydrogen gases balanced with (a) air
and (b) N2 at 340, 390, and 450 K. .......................................................... 164
Figure 3.3.12 Logarithmic equilibrium constant ( i k ) as a function of the reciprocal
temperature in air and N2 atmospheres. The inset shows the change of the
activation energy ( a E ) of the studied Pd/GaN Schottky diode in air and N2
atmospheres.............................................................................................. 165
Figure 3.3.13 The hydrogen detection adsorption time constant ( a τ ) and the initial
rate of change in current (ΔI / Δt ) (μAs-1) upon the switching actions as a
function of temperature measured in a 980 ppm H2 gas in air and N2
atmospheres.............................................................................................. 166
Figure 4.1.1 Schematic cross sections of the studied (a) Pt/GaN (MS) and (b)
Pt/SiO2/GaN (MIS) Schottky diodes. ...................................................... 167
Figure 4.1.2 AES depth profiles of the studied (a) Pt/GaN (MS) and (b) Pt/SiO2/GaN
(MIS) Schottky diodes. ............................................................................ 168
Figure 4.1.3 The current-voltage (I-V) characteristics of the studied Pt/GaN (MS) and
Pt/SiO2/GaN (MIS) Schottky diodes measured under the atmospheric
condition and exposed to different-concentration hydrogen gases balanced
with air at 300 and 850 K. ........................................................................ 169
Figure 4.1.4 The schematic energy band diagrams for the studied (a) Pt/GaN (MS)
and (b) Pt/SiO2/GaN (MIS) Schottky diodes upon exposing to hydrogen
gases in an air atmosphere. ...................................................................... 170
Figure 4.1.5 The relationship between the (a) forward and (b) reverse hydrogen
sensitivity ratio as a function of hydrogen concentration for the studied
Pt/GaN (MS) and Pt/SiO2/GaN (MIS) Schottky diodes at 300 and 850 K.
The applied forward and reverse voltages are fixed at VF = 0.5 V and VR =
-2 V, respectively. ..................................................................................... 171
Figure 4.1.6 The Schottky barrier height variation ( b Δφ ) of the studied Pt/GaN (MS)
and Pt/SiO2/GaN (MIS) Schottky diodes as a function of hydrogen
concentration at 300 and 850 K in an air atmosphere. ............................. 172
X
Figure 4.1.7 The reciprocal logarithmic current variation magnitude 1 / ln( / ) og o I I
as a function of the reciprocal hydrogen pressure radical 1/ 2
2
?
H P for the
studied Pt/GaN (MS) and Pt/SiO2/GaN (MIS) Schottky diodes caused by
hydrogen in an air atmosphere at 500, 550, and 600 K. .......................... 173
Figure 4.1.8 Logarithmic equilibrium constant ( e K ) of the studied Pt/GaN (MS) and
Pt/SiO2/GaN (MIS) Schottky diodes as a function of the reciprocal
temperature. The inset shows the enthalpy of hydrogen adsorption ( ΔH° )
of both studied devices in an air atmosphere. .......................................... 174
Figure 4.1.9 The transient response curves of the studied Pt/GaN (MS) Schottky diode
under the introduction and removal of 98, 980, and 9970 ppm H2 in air
gases at 400, 500, and 600 K. The forward bias is kept of 0.35 V. .......... 175
Figure 4.1.10 The transient response curves of the studied Pt/SiO2/GaN (MIS)
Schottky diode under the introduction and removal of 98, 980, and 9970
ppm H2 in air gases at 400, 500, and 600 K. The forward bias is kept of 1 V.
.................................................................................................................. 176
Figure 4.1.11 The corresponding relationship between ln[1 ln( / ) / ln( / )] , I I I I g g eq ?
and measuring time t for the studied (a) Pt/GaN (MS) and (b)
Pt/SiO2/GaN (MIS) Schottky diodes with the introduced
different-concentration hydrogen gases balanced with air at 400, 500, and
600 K. ....................................................................................................... 177
Figure 4.1.12 Logarithmic equilibrium constant ( i k ) of the studied (a) Pt/GaN (MS)
and (b) Pt/SiO2/GaN (MIS) Schottky diodes as a function of the reciprocal
temperature in an air atmosphere. The inset shows the change of the
activation energy ( a E ) of both studied devices in an air atmosphere. .... 178
Figure 4.1.13 The transient response curves of the studied Pt/GaN (MS) Schottky
diode under the introduction and removal of a 9970 ppm H2/air gas
measured at various temperatures. The applied forward bias of the studied
MS device is kept at 0.35 V. ..................................................................... 179
Figure 4.1.14 The transient response curves of the studied Pt/SiO2/GaN (MIS)
Schottky diode under the introduction and removal of a 9970 ppm H2/air
gas measured at various temperatures. The applied forward bias of the
studied MIS device is kept at 1 V. ............................................................ 180
Figure 4.1.15 The hydrogen detection adsorption time constant ( a τ ) and hydrogen
detection desorption time constant ( b τ ) of the studied Pt/GaN (MS) and
Pt/SiO2/GaN (MIS) Schottky diodes upon the switching actions as a
XI
function of temperature measured in a 9970 ppm H2 gas in an air
atmosphere. .............................................................................................. 181
Figure 4.2.1 Schematic cross section of the studied Pt/SiNx/GaN (MIS) Schottky
diode......................................................................................................... 182
Figure 4.2.2 AES depth profiles of the studied Pt/SiNx/GaN (MIS) Schottky diode. 183
Figure 4.2.3 The current-voltage (I-V) characteristics of the studied Pt/SiNx/GaN
(MIS) Schottky diode measured under the atmospheric pressure and when
exposed to different-concentration hydrogen gases balanced with air and
N2 at (a) 300 and (b) 850 K. ..................................................................... 184
Figure 4.2.4 Schematic diagram of hydrogen adsorption process. (a) The appearance
of the polarization layer, formed by hydrogen atoms trapped at the
catalytic metal and insulator interface. Schematic diagrams of space charge
distribution resulted in electric field (b) under the absence of hydrogen and
(c) under the presence of hydrogen. ......................................................... 186
Figure 4.2.5 The corresponding schematic energy band diagrams for the studied
Pt/SiNx/GaN (MIS) Schottky diode upon exposing to hydrogen gases in (b)
air and (c) N2 atmospheres. ...................................................................... 187
Figure 4.2.6 The forward and reverse hydrogen sensitivity ratio as a function of
hydrogen concentration for the studied Pt/SiNx/GaN (MIS) Schottky diode
at 300 and 850 K. The applied forward and reverse voltages are fixed at VF
= 0.5 V and VR = -2 V, respectively. ........................................................ 188
Figure 4.2.7 The Schottky barrier height variation ( bφ Δ ) of the studied Pt/SiNx/GaN
(MIS) Schottky diode as a function of hydrogen concentration at 300 and
850 K both in air and N2 atmospheres. .................................................... 189
Figure 4.2.8 The reciprocal logarithmic current variation magnitude (1 / ln( / ) og o I I )
as a function of the reciprocal square root of hydrogen pressure ( 1/ 2
2
?
H P ) for
the studied Pt/SiNx/GaN (MIS) Schottky diode induced by H2 in (a) air and
(b) N2 atmospheres at 500, 550, and 600 K. ......................................... 190
Figure 4.2.9 Logarithmic equilibrium constant ( e K ) of the studied Pt/SiNx/GaN (MIS)
Schottky diode as a function of the reciprocal temperature. The inset
shows the enthalpy of hydrogen adsorption ( ΔH° ) of the studied device in
air and N2 atmospheres. ........................................................................... 191
Figure 4.2.10 The transient response curves of the studied Pt/SiNx/GaN (MIS)
Schottky diode under the introduction and removal of a 9970 ppm H2/air
gas measured at different temperatures in an air atmosphere. The forward
bias is kept at VF = 1 V. ............................................................................ 192
XII
Figure 4.2.11 The hydrogen detection adsorption time constant ( a τ ) (or the hydrogen
detection desorption time constant ( b τ ) and corresponding initial rates in
current variation (ΔI / Δt ) of the studied Pt/SiNx/GaN (MIS) Schottky
diode upon the switching actions as a function of temperature measured in
a 9970 ppm H2 gas in an air atmosphere. The applied forward voltage is
kept at VF = 1 V. ....................................................................................... 193
Figure 4.2.12 The transient response curves of the studied Pt/SiNx/GaN (MIS)
Schottky diode under the introduction of a 10300 ppm H2/N2 gas and
removal in N2 and air atmospheres measured at different temperatures. The
forward bias is kept at VF = 1 V. .............................................................. 194
                                    

References
[1] R. C. Weast, “Handbook of chemistry and physics,” Cleveland: CRC press, p.
F-35, 1976.
[2] W. Gopel, J. Hesse, and J. N. Zemel, “Sensors,” Weinheim: VCH press, vol. 1,
ch. 10, 1991.
[3] A. Mandelis and C. Christofides, “Physics, chemistry and technology of solid
state gas sensor devices,” New York: John Wily & Sons, ch. 3, 1993.
[4] C. C. Cheng, Y. Y. Tsai, K. W. Lin, H. I. Chen, W. H. Hsu, C. W. Hung, R. C. Liu,
and W. C. Liu, “Pd-Oxide-Al0.24Ga0.76As (MOS) high electron mobility transistor
(HEMT)-based hydrogen sensor,” IEEE Sensors J. vol. 6, pp. 287–292, 2006.
[5] K. I. Lundstrom, M. S. Shivaraman, and C. M. Svensson, “A hydrogen-sensitive
Pd-gate MOS transistor,” J. Appl. Phys., vol. 46, pp.3876-3881, 1975.
[6] D. Briand, H. Sundrgen, B. van der Schoot, I. Lundstrom, and N. F. de. Rooij,
“Thermally isolated MOSFET for gas sensing application,” IEEE Electron
Device Lett., vol. 22, pp. 11-13, 2001.
[7] C. C. Cheng, Y. Y. Tsai, K. W. Lin, H. I. Chen, W. H. Hsu, C. W. Hung, R. C. Liu,
and W. C. Liu, “Pd-Oxide-Al0.24Ga0.76As (MOS) high electron mobility transistor
(HEMT)-based hydrogen sensor,” IEEE Sensors J. vol. 6, pp. 287–292, 2006.
[8] G. W. Hunter, P. G. Neudeck, L. Y. Chen, D. Knight, C. C. Liu, and Q. H. Wu,
“Microfabricated chemical sensors for safety and emission control applications,”
in Proc. 17th Digital Avionics Systems Conf., vol. 1, pp. D11/1-D11/8, 1998.
[9] A. Arbab, A. Spetz, and I. Lundstrom “Gas sensors for high-temperature
operation-based on metal-oxide-silicon-carbide (MOSiC) devices,” Sens.
Actuators B. Chem., vol. 15-16, pp. 19-23, 1993.
[10] C. K. Kim, J. H. Lee, Y. H. Lee, N. I. Cho, D. J. Kim, and W. P. Kang,
“Hydrogen sensing characteristics of Pd-SiC Schottky diode operating at high
83
temperature,” J. Electron. Mater. vol. 28, pp. 202-205, 1999.
[11] K. Dobos, M. Armgerth, G. Zimmer, I. Lundstrom, “The influence of different
insulators on palladium-gate metal-insulator-semiconductor hydrogen sensors,”
IEEE Trans. Electron Devices, vol. 31, pp. 508-510, 1984.
[12] M. Armgarth and C. Nylander, “A stable hydrogen-sensitive Pd gate metal-oxide
semiconductor capacitor,” Appl. Phys. Lett., vol. 39, pp. 91-92, 1981.
[13] M. Armgarth, D. Soderberg, and I. Lundstrom, “Palladium and platinum gate
metal-oxide-semiconductor capacitors in hydrogen and oxygen mixtures,” Appl.
Phys. Lett., vol. 41, pp. 654-655, 1982.
[14] M. Armgarth and C. Nylander, “Blister formation in Pd gate MIS hydrogen
sensors,” IEEE Electron Device Lett., vol. 3, pp. 384-386, 1982.
[15] C. Nylander, M. Armgarth, and C. Svensson, “Hydrogen induced drift in
palladium gate metal-oxide-semiconductor substrates,” J. Appl. Phys., vol. 56,
pp. 1177-1188, 1984.
[16] T. L. Poteat, B. Lalevi? , B. Kuliyev, M. Yousuf, and M. Chen, “MOS and
Schottky diode gas sensors using transition metal electrodes,” J. Electron. Mater.,
vol. 12, pp. 181-214, 1983.
[17] T. L. Poteat and B. Lalevi?, “Pd-MOS hydrogen and hydrocarbon sensor
device,” IEEE Electron Device Lett., vol. 2, pp. 82-84, 1981.
[18] T. L. Poteat and B. Lalevi?, “Transition metal-gate MOS gaseous detectors,”
IEEE Trans. Electron Devices, vol. 29, pp. 123-129, 1982.
[19] U. Ackelid, M. Armgarth, A. Spetz, and I. Lundstrom, “Ethanol sensitivity of
palladium-gate metal-oxide-semiconductor structures,” IEEE Electron Device
Lett., vol. 7, pp. 353-355, 1986.
[20] I. Lundstrom, A. Spetz, F. Winquist, U. Ackelid, and H. Sundgren, “Catalytic
metals and field-effect devices - a useful combination,”Sens. Actuator B-Chem.,
84
vol. 1, pp. 15-20, 1990.
[21] F. Winquist, A. Spetz, M. Armgarth, M. Armgarth, and B. Danielsson,
“Biosensors based on ammonia sensitive metal-oxide-semiconductor structures,”
Sens. Actuator B-Chem., vol. 8, pp. 91-100, 1985.
[22] I. Lundstrom, M. Armgarth, A. Spetz, and F. Winquist, “Gas sensors based on
catalytic metal-gate field-effect devices,” Sens. Actuator B-Chem., vol. 10, pp.
399-421, 1986.
[23] A. Ortiz, S. Lopez, J. C. Alonso, and S. Muhl, “Hydrogen-sensitive
Ni-SiO2a-Si-H Schottky diodes,” Thin Solid Films, vol. 207, pp. 279-282, 1992.
[24] H. Nienhaus, H. S. Bergh, B. Gergen, A. Majumdar, W. H. Weinberg, and E. V.
McFarland, “Ultrathin Cu films on Si(111): Schottky barrier formation
andsensor applications,” J. Vac. Sci. Technol. A, vol. 17, pp. 1683-1687, 1999.
[25] H. Nienhaus, H. S. Bergh, B. Gergen, and A. Majumdar, W. H. Weinberg, and E.
V. McFarland, “Selective H atom sensors using ultrathin Ag-Si Schottkydiodes”
Appl. Phys. Lett., vol. 74, pp. 4046-4048, 1999.
[26] J. Liu, G. R. Oritz, Y. Zhang, H. Bakhru, and J. W. Corbett, “Effects of
hydrogenon the barrier height of a titanium Schottky didoe on p-type silicon,”
Phys. Rev. B, vol. 44, pp. 8918-8922, 1991.
[27] S. X. Jin, L. pp. Wang, M. H. Yuan, J. J. Chen, Y. Q. Jia, and G. G. Jia, “Effects
of hydrogen on the Schottky-barrier of Ti/n-GaAs diodes,” J. Appl. Phys., vol.
71, pp. 536-538, 1992.
[28] Y. Q. Jia and G. G. Qin, “Effects of hydrogen on Al/p-Si Schottky diodes,” Appl.
Phys. Lett., vol. 56, pp. 641-643, 1990.
[29] L. M. Lechuga, A. Calle, D. Golmayo, pp. Tejedor, and F. Briones, “A new
hydrogen sensor based on a Pt/GaAs Schottky diode,” J. Electrochem. Soc., vol.
138, pp. 159-162, 1991.
85
[30] L. M. Lechuga, A. Calle, D. Golmayo, and F. Briones, “Hydrogen sensor based
on a Pt/GaAs Schottky diode,” Sens. Actuator B-Chem., vol. 4, pp. 551-558,
1991.
[31] N. Yamamoto, S. Tonomura, T. Matsuoka, and H. Tsubomura, “A study on a
palladium-titanium oxide Schottky diode as a detector for gaseous components,”
Surf. Sci., vol. 92, pp. 400-406, 1980.
[32] H. Kobayashi, K. Kishimoto, and Y. Nakato, “Reactions of hydrogen at the
interface of palladium-titanium dioxide Schottky diodes as hydrogen sensors,
studied by work function and electrical characteristic measurements,” Surf. Sci.,
vol. 306, pp. 393-405, 1994.
[33] L. M. Lechuga, A. Calle, D. Golmayo, and F. Briones, “Different catalytic
metals (Pt, Pd and Ir) for GaAs Schottky-barrier sensors,” Sens. Actuator
B-Chem., vol. 7, pp. 614-618, 1992.
[34] S. Roy, C. Jacob, C. Lang, and S. Basu, “Studies on Ru/3C-SiC Schottky
junctions for high temperature hydrogen sensors,” J. Electrochem. Soc., vol. 150,
pp. H135-H139, 2003.
[35] D. E. Aspnes and A. Heller, “Barrier height and leakage reduction in n-GaAs
-platinum group metal Schottky barriers upon exposure to hydrogen,” J. Vac. Sci.
Technol. B, vol. 1, pp. 602-607, 1983.
[36] T. Akin, B Ziaie, S. A. Nikles, and K. Najafi, “A modular micromachined
high-density connector system for biomedical applications,” IEEE Trans. Biomed.
Eng., vol. 46, pp. 471-480, Apr. 1999.
[37] A. Dittmar and K. Najafi, “Special topic section on microtechniques,
microsensors, microactuators, and microsystems,” IEEE Trans. Biomed. Eng.,
vol. 47, pp. 1-2, Jan. 2000.
[38] J. Fogelberg, M. Eriksson, H. Dannetun, and L. G. Petersson, “Kinetic modeling
86
of hydrogen adsorption/absorption in thin films on hydrogen-sensitive
field-effect devices: Observation of large hydrogen-induced dipoles at the
Pd-SiO2 interface,” J. Appl. Phys., vol. 78, pp. 988-996, July 1995.
[39] M. Lofdahl, M. Eriksson, M. Johansson, and I. Lundstrom, “Difference in
hydrogen sensitivity between Pt and Pd field-effect devices,” J. Appl. Phys., vol.
91, pp. 4275-4280, April 2002.
[40] D. Briand, H. Sundgren, B. van der Schoot, I. Lundstrom, and N. F. de Rooij,
“Thermally isolated MOSFET for gas sensing application,” IEEE Electron
Device Lett., vol. 22, pp. 11–13, Jan. 2002.
[41] A. E. Abom, R. T. Haasch, N. Hellgren, N. Finnegan, L. Hultman, and M.
Eriksson, “Characterization of the metal-insulator interface of field-effect
chemical sensors,” J. Appl. Phys., vol. 93, pp. 9760-9768, June 2003.
[42] H. Wingbrant, I. Lundstrom, and A. Lloyd Spetz, “The speed of response of
MISiCFET devices,” Sens. Actuators B. Chem., vol. 93, pp. 286-294, 2003.
[43] K. W. Lin, H. I. Chen, C. T. Lu, Y. Y. Tsai, H. M. Chuang, C. C. Chen, and W. C.
Liu, “A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode
hydrogen sensor,” Semicond. Sci. Technol., vol. 18, pp. 615-619, 2003.
[44] K. W. Lin, H. I. Chen, H. M. Chuang, C. Y. Chen, C. T. Lu, C. C. Cheng, and W.
C. Liu, “Characteristics of Pd/InGaP Schottky diodes hydrogen sensors,” IEEE
Sensors J., vol. 4, pp. 72–79, Feb. 2004.
[45] L. M. Lechuga, A. Calle, D. Golmayo, P. Tejedor, and F. Briones, “A new
hydrogen sensor based on a Pt/GaAs schottky diode,” Sens. Actuators B. Chem.,
vol. 4, pp. 515-518, 1991.
[46] Y. K. Fang, S. B. Hwang, C. Y. Lin, and C. C. Lee, “Trench Pd/Si
metal-oxide-semiconductor Schottky barrier diode for a high sensitivity
hydrogen gas sensor,” Appl. Phys. Lett., vol. 57, pp. 2686-2688, 1990.
87
[47] W. P. Kang and Y. Gurbuz, “Comparison and analysis of Pd- and Pt-GaAs
Schottky diodes for hydrogen detection,” J. Appl. Phys., vol. 75, pp. 8175-8181,
1994.
[48] C. T. Lu, K. W. Lin, H. I. Chen, H. M. Chuang, C. Y. Chen, and W. C. Liu, “A
new Pd-Oxide-Al0.3Ga0.7As MOS hydrogen sensor,” IEEE Electron Device Lett.,
vol. 24, pp. 390-392, June 2003.
[49] Y. Y. Tsai, K. W. Lin, C. T. Lu, H. I. Chen, H. M. Chuang, C. Y. Chen, C. C.
Cheng, and W. C. Liu, “Investigation of hydrogen-sensing properties of
Pd/AlGaAs-based Schottky diodes,” IEEE Trans. Electron Devices, vol. 50, pp.
2532–2539, Dece. 2003.
[50] I. Lundstrom, S. Shivaraman, C. Svensson, and L. Lundkvist, “A
hydrogen-sensitive MOS field-effect transistor,” Appl. Phys. Lett., vol. 26, pp.
55-57, 1975.
[51] D. Dwivedi, R. Dwivedi, and S. K. Srivastava, “Sensing properties of
palladium-gate MOS (Pd-MOS) hydrogen sensor-based on plasma grown silicon
dioxide,” Sens. Actuators B. Chem., vol. 71, pp. 161-168, 2000.
[52] J. W. Hammond and C. C. Liu, “Silicon based microfabricated tin oxide gas
sensor incorporating use of Hall effect measurement,” Sens. Actuators B. Chem.,
vol. 81 pp. 25-31, 2001.
[53] B. P. Luther, S. D. Wolter, and S. E. Mohney, “High temperature Pt Schottky
diode gas sensors on n-type GaN,” Sens. Actuators B. Chem., vol. 56, pp.
164-168, 1999.
[54] A. Arbab, A. Spetz, and I. Lunstrom, “Gas sensors for high-temperature
operation-based on metal-oxide-silicon-carbide (MOSiC) devices,” Sens.
Actuators B. Chem., vol. 15-16, pp. 19-23, 1993.
[55] A. Baranzahi, A. L. Spetz, B. Andersson, and I. Lundstrom, “Gas sensitive field
88
effect devices for high temperature,” Sens. Actuators B, Chem., vol. 26, pp.
165–169, 1995.
[56] C. K. Kim, J. H. Lee, Y. H. Lee, N. I. Cho, D. J. Kim, and W. P. Kang,
“Hydrogen sensing characteristics of Pd-SiC Schottky diode operating at high
temperature,” J. Electron. Mat. vol. 28, pp. 202-205, 1999.
[57] A. Lloyd Spetz, P. Tobias, L. Uneus, H. Svenningstorp, L. G. Ekedahl, and I.
Lundstrom, “High temperature catalytic metal field effect transistors for
industrial applications,” Sens. Actuators B, Chem., vol. 70, pp. 67–76, 2000.
[58] C. K. Kim, J. H. Lee, S. M. Choi, I. H. Noh, H. R. Kim, N. I. Cho, C. Hong,
and G. E. Jang, “Pd- and Pt-SiC Schottky diodes for detection of H2 and CH4 at
high temperature,” Sens. Actuators B, Chem., vol. 77, pp. 455–462, 2001.
[59] A. Trinchi, K. Galatsis, W. Wlodarski, and Y. X. Li, “A Pt/Ga2O3-ZnO/SiC
Schottky diode-based hydrocarbon gas sensor,” IEEE Sensors J., vol. 3, pp.
548–553, 2003.
[60] J. Li, W. R. Donaldson, and T. Y. Hsiang, “Very fast metal-semiconductor-metal
ultraviolet photodetectors on GaN with submicro finger width,” IEEE Photonics
Technol. Lett., vol. 15, pp. 1141-1143, August 2003.
[61] M. Mosca, J. L. Reverchon, N. Grandjean, and J. Y. Duboz, “Multilayer
(Al,Ga)N structures for solar-blind detection, ” IEEE J. Sel. Top. Quantum
Electron., vol. 10, pp. 752-758, 2004.
[62] S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T.
Kehias, and T. J. Jenkins, “High-power microwave GaN/AlGaN HEMT’s on
semi-insulating silicon carbide substrates,” IEEE Electron Device Lett., vol. 20,
pp. 161-163, 1999.
[63] R. Gaska, Q. Chen, J. Yang, A. Qsinsky, M. Asif Khan, and M. S. Shur,
“High-temperature performance of AlGaN/GaN HFET’s on SiC substrates,”
89
IEEE Electron Device Lett., vol. 18, pp. 492-494, 1997.
[64] J. Schalwig, G. Muller, U. Karrer, M. Eickhoff, O. Ambacher, M. Stutzmann, L.
Gorgens, and G. Dollinger, “Hydrogen response mechanism of Pt-GaN Schottky
diodes,” Appl. Phys. Lett., vol. 80, pp. 1222-1224, 2002.
[65] J. Kim, F. Ren, B. P. Gila, C. R. Abernathy, and S. J. Pearton, “Reversible barrier
height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes,” Appl. Phys.
Lett., vol. 82, pp. 739-741, 2003.
[66] J. Kim, B. P. Gila, G. Y. Chung, C. R. Abernathy, S. J. Pearton, and F. Ren,
“Hydrogen-sensitive GaN Schottky diodes,” Solid-State Electron., vol. 47, pp.
1069-1073, 2003.
[67] I. Lundstrom and L. G. Petersson, “Chemical sensors with catalytic metal gates,”
J. Vac. Sci. Technol A., vol. 14, pp. 1539-1545, 1996.
[68] F. A. Lewis, The Palladium Hydrogen System, New York: Academic, 1967.
[69] M. Z. Atashbar, D. Banerji, and S. Singamaneni, “Room-temperature hydrogen
sensor based on palladium nanowires,” IEEE Sensors J., vol. 5, pp. 792–797,
2005.
[70] M. Johansson, I. Lundstrom, and L. G. Ekedahl, “Bridging the pressure gap for
palladium metal-insulator-semiconductor hydrogen sensors in oxygen containing
environments,” J. Appl. Phys., vol. 84, pp. 44-51, 1998.
[71] S. M. Sze, Physics of Semiconductor Devices, second ed., Wiley, New York,
1981 (Chapter 2).
[72] M. W. Cole, D. W. Eckart W. Y. Han, R. L. Pfeffer, T. Monahan, F. Ren, C. Yuan,
R. A. Stall, S. J. Pearton, Y. Li, and Y. Lu, “Thermal stability of W ohmic
contacts to n-type GaN,” J. Appl. Phys., vol. 80, pp. 278-281, 1996.
[73] M. Eriksson and L. G. Ekedahl, “Hydrogen adsorption states at the Pd/SiO2
interface and simulation of the response of a Pd metal-oxide-semiconductor
90
hydrogen sensor,” J. Appl. Phys., vol. 83, pp. 3947-3951, 1998.
[74] W. C. Liu, H. J. Pan, H. I. Chen, K. W. Lin, S. Y. Cheng, and K. H. Yu,
“Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode
hydrogen sensor,” IEEE Trans. Electron Devices, vol. 48, pp. 1938-1944, Sept.
2001.
[75] C. Christofides and A. Mandelis, “Solid-state sensors for trace hydrogen gas
detection,” J. Appl. Phys., vol. 68, pp. R1-R30, 1990.
[76] W. C. Liu, H. J. Pan, H. I. Chen, K. W. Lin, and C. K. Wang, “Comparative
hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor
Schottky diodes,” Jpn. J. Appl. Phys., vol. 40, pp. 6254–6289, 2001.
[77] R. J. Silbey and R. A. Alberty, Physical Chemistry, third ed., Wiley, New York,
2001.
[78] M. Eriksson, I. Lundstrom, and L. G. Ekedahl, “A model of the Temkin isotherm
behavior for hydrogen adsorption at Pd-SiO2 interfaces,” J. Appl. Phys., vol. 82,
pp. 3143-3146, Sept. 1997.
[79] C. C. Cheng, Y. Y. Tsai, K. W. Lin, H. I. Chen, C. T. Lu, and W. C. Liu,
“Hydrogen sensing characteristics of a Pt-oxide-Al0.3Ga0.7As MOS Schottky
diode,” Sens. Actuators B, vol. 99, pp. 425-430, 2004.
[80] B. S. Kang, S. Kim, F. Ren, B. P. Gila, C. R. Abernathy, and S. J. Pearton,
“Comparison of MOS and Schottky W/Pt-GaN diodes for hydrogen detection,”
Sens. Actuators B, vol. 104, pp. 232-236, 2005.
[81] W. Liu, “Handbook of III-V Heterojunction Bipolar Transistors,” Wiley, New
York, 1998.
[82] A. Voskoboynikov, S. H. Liu, and C. P. Lee, “Spin-dependent delay time in
electronic resonant tunneling at zero magnetic field,” Solid State Commun., vol.
115, pp. 477-481, 2000.
91
[83] J. Li, W.R. Donaldson, and T. Y. Hsiang, “Very fast metal-semiconductor-metal
ultraviolet photodetectors on GaN with submicro finger width,” IEEE Photonics
Technol. Lett., vol. 15, pp. 1141-1143, 2003.
[84] T. Iwanaga, T. Hyodo, Y. Shimizu, and M. Egahira, “H2 sensing properties and
mechanism of anodically oxidized TiO2 film contacted with Pd electrode,” Sens.
Actuators B, vol. 93, pp. 519-525, 2003.
[85] H. I. Chen, Y. I. Chou, and C. Y. Chu, “A novel high-sensitive Pd/InP hydrogen
sensor fabricated by electroless plating,” Sens. Actuators B, vol. 85, pp. 10-18,
2002.
[86] R. C. Weast, “Handbook of Chemistry and Physics,” p. F-35, Cleveland: CRC
press, 1976.
[87] B. S. Kang, F. Ren, B. P. Gila, C. R. Abernathy, and S. J. Pearton,
“AlGaN/GaN-based metal-oxide-semiconductor diode-based hydrogen gas
sensor,” Appl. Phys. Lett., vol. 84, pp. 1123-1125, 2004.
[88] J. Song, W. Lu, J. S. Flynn, and G. R. Brandes, “Pt-AlGaN/GaN Schottky diodes
operated at 800°C for hydrogen sensing,” Appl. Phys. Lett., vol. 87, pp. 133501,
2005.
[89] M. Ali, V. Cimalla, V. Lebedev, H. Romanus, V. Tilak, D. Merfeld, P. Sandvik,
and O. Ambacher, “Pt/GaN Schottky diodes for hydrogen gas sensors,” Sens.
Actuators B, vol. 113, pp. 797-804, 2006.
[90] H. I. Chen, Y. I. Chou, and C. K. Hsiung, “Comprehensive study of adsorption
kinetics for hydrogen sensing with an electroless-plated Pd-InP Schottky diode,”
Sens. Actuators B, vol. 92, pp. 6-16, 2003.
[91] S. Nakagomi, P. Tobias, A. Baranzahi, I. Lundstrom, P. Martensson, and A. L.
Spetz, “Influence of carbon monoxide, water and oxygen on high temperature
catalytic metal-oxide-silicon carbide structures,” Sens. Actuators B, vol. 45, pp.
92
183-191, 1997.
[92] L. Y. Chen, G. W. Hunter, P. G. Neudeck, and D. Knight, “Surface and interface
properties of PdCr/SiC Schottky diode gas sensor annealed at 425°C,”
Solid-State Electron., vol. 42, pp. 2209-2214, 1998.
[93] P. Tobias, P. Martensson, A. Goras, I. Lundstrom, and A. L. Spetz, “Moving gas
outlets for the evaluation of fast gas sensors,” Sens. Actuators B, vol. 58, pp.
389-393, 1999.
[94] S. Nakagomi, K. Okuda, and Y. Kokubun, “Electrical properties dependent on H2
gas for new structure diode of Pt-thin WO3-SiC,” Sens. Actuators B, vol. 96, pp.
364-371, 2003.
[95] S. Kandasamy, A. Trinchi, W. Wlodarski, E. Comini, and G. Sberveglieri,
“Hydrogen and hydrocarbon gas sensing performance of Pt/WO3/SiC MROSiC
devices,” Sens. Actuators B, vol. 111-112, pp. 111-116, 2005.
[96] W. C. Liu, K. W. Lin, H. I. Chen, C. K. Wang, C. C. Cheng, S. Y. Cheng, and C.
T. Lu, “A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor,”
IEEE Electron Device Lett., vol. 23, pp. 640-642, 2002.
[97] J. P. Xu, P. T. Lai, D. G. Zhong, and C. L. Chan, “Improved hydrogen-sensitive
properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate
insulator,” IEEE Electron. Device Lett., vol. 24, pp. 13-15, 2003.
[98] C. W. Hung, H. L. Lin, H. I. Chen, Y. Y. Tsai, P. H. Lai, S. I. Fu, and W. C. Liu,
“A novel Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor,” IEEE Electron.
Device Lett., vol. 27, pp. 951-954, 2006.
[99] W. Gopel, J. Hesse, and J. N. Zemel, “Sensors,” VCH press, Weinheim, vol. 2, ch.
11, 1991.
[100] M. Eriksson, A. Salomonsson, I. Lundstrom, D. Briand, and A. E. Abom, “The
influence of the insulator surface properties on the hydrogen response of
93
field-effect gas sensors,” J. Appl. Phys., vol. 98, pp. 034903, 2005.
[101] K. W. Lin, H. I. Chen, C. C. Cheng, H. M. Chuang, C. T. Lu, and W. C. Liu,
“Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky
diode,” Sens. Actuators B, vol. 94, pp. 145-151, 2003.
[102] C. C. Cheng, Y. Y. Tsai, K. W. Lin, H. I. Chen, C. T. Lu, and W. C. Liu,
“Hydrogen sensing characteristics of a Pt-oxide-Al0.3Ga0.7As MOS Schottky
diode,” Sens. Actuators B, vol. 99, pp. 425-430, 2004.
[103] Y. Shimizu, N. Kuwano, T. Hyodo, and M. Egashira, “High H2 sensing
performance of anodically oxidized TiO2 film contacted with Pd,” Sens.
Actuators B, vol.83, pp. 195-201, 2002.
[104] I. Lundstrom, “Hydrogen sensitive MOS structures. Part 1. Principles and
applications,” Sens. Actuators B, vol. 1, pp. 403-426, 1981.
[105] I. Lundstrom, “Hydrogen sensitive MOS structures. Part 2. Characterization,”
Sens. Actuators B, vol. 2, pp. 105-138, 1981/1982.
[106] H. Svenningstorp, B. Widen, P. Salomonsson, L. G. Ekedahl, I. Lundstrom, P.
Tobias, and A. L. Spetz, “Detection of HC in exhaust gases by an array of MISiC
sensors,” Sens. Actuators B, vol. 77, pp. 177-185, 2001.
[107] M. Lofdahl, M. Eriksson, M. Johansson, and I. Lundstrom, “Difference in
hydrogen sensitivity between Pt and Pd field-effect devices,” J. Appl. Phys., vol.
91, pp. 4275-4280, 2002.
[108] L. G. Petersson, H. M. Dannetun, and I. Lundstrom, “The water-forming reaction
on palladium,” Surf. Sci., vol. 161, pp. 77-100, 1985.

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