在本研究中，利用傳統之固態反應法，選用添加氧化鉍（Bi２O３）、氧化鈷(Co3O4)、三氧化二錳(Mn2O3)等氧化物於氧化鋅變阻器。本文選擇積層技術整合電容與電阻，將電阻內埋於陶瓷體加以低溫共燒。為了降低ZnO變阻器燒結溫度，添加數種燒結助劑於ZnO陶瓷，最後實做抗靜電與電磁干擾防護之整合型陶瓷元件，每一元件包含4個EMI濾波器與ESD保護的線路。為了實作電容-電阻-電容低通濾波器（capacitor-resistor-capacitor filter，C-R-C filter），濾波器的特性分析以π型2D電路進行，並進行3-dB 截止頻率為180 MHz低通濾波器設計，電氣特性以電磁軟體(Sonnet、HFSS)進行模擬，實際電路以積層陶瓷元件製程製作，更利用模擬結果與實作比較。
Disc樣品實驗結果顯示，添加氧化釩(V2O5)、氧化硼(B2O3)可有效降低燒結溫度至至850℃，持溫時間亦可縮短至一小時內。元件量測結果顯示，實作元件電氣特性結果為3-dB截止頻率為204 MHz，900~2000 MHz至少衰減20 dB。

In this study, ZnO varistors doped with Bi２O３, Co3O4, Mn2O3 were prepared using traditional solid-state reaction method. In this article, resistance paste prints in the green ceramic body for low-temperature co-fired process. In order to decrease the sintering temperature, adding several sintering aids to fabricate integrated ceramic device of electrostatic discharge and electromagnetic interference protection was investigated in this paper. There were 4 EMI filters and ESD protection lines in one device. The C-R-C low-pass filter circuit analysis was performed by one π-type equivalent circuit. The circuit with 3-dB cutoff frequency at 180 MHz was designed and evaluated by two electromagnetic simulators, Sonnet and HFSS. We used multilayer process to fabricate the device and compared the results of simulation with the performances of the device measurement.
The result shows the sample was added V2O5、B2O3 to reduce the sintering temperature at 850℃ and holding time less than 1 hour. Finally, the measured results of the sample show 3-dB cutoff frequency at 204 MHz and minimum -20 dB attenuation from 900 MHz to 2000 MHz.

1. 曲遠方, “功能陶瓷材料”,曉遠出版社, 2006
2. 曾泓瑋,李俊遠,劉世寬, “MLV元件應用於ESD保護之量測概
念”電子與材料第8期p.88-p.94
3. 汪建民, “陶瓷技術手冊”, 1994
4. 國立編譯館, “電子陶瓷材料” , 邱碧秀
5. 沈祐民, “Pr6O11-ZnO變阻器變阻性質之研究”, 國立成功大
學資源工程研究所碩士論文, 2007
6. 王志芳, “保護元件之產業概況”,台灣工業銀行, 2008
7. Fangli Yuan and Hojin Ryu, “Microstructure of
Varistors Prepared with Zinc Oxide Nanoparticles
Coated with Bi2O3,” J. Am. Ceram. Soc., 87 [4] 736–
38 Apr. 2004
8. J. Wong, “Sintering and Varistor Characteristics of
ZnO–Bi2O3 Ceramics,”J. Appl. Phys., 51 [8] 4452–59
(1980).
9. T. Asokan, G. N. K. Iyengar, and G. R. Nagabhushama,
“Studies on Microstructure and Density of Sintered
ZnO-based Nonlinear Resistors,” J. Mater. Sci., 22
[6]2229–36 (1987).
10. David R. Clarke, “Varistor Ceramic,” J. Am. Ceram.
Soc., 82 [3] 485–502 (1999).
11. Mohammad A. Alim, Shengtao Li, Fuyi Liu, and Pengfei
Cheng, “Electrical barriers in the ZnO varistor
grain boundaries,” phys. stat. sol. (a) 203, No. 2,
410–427 (2006)
12. Mohammad A. Alim, ”Admittance-Frequency Response in
Zinc Oxide VDR ceramics,” J. Am. Ceram. Soc., 72 [l]
28-32 (1989)
13. Albert Sutono, Joy Laskar, and W.R.Smith, “Design of
Miniature Multilayer On-Package Integrated Image-
Reject Filters,” IEEE Trans. Microwave Theory Tech.,
Vol. 51, No. 1, pp. 156-162, Jan. 2003.
14. Lap Kun Yeung and Ke-Li Wu, “A Compact Second-Order
LTCC Bandpass Filter With Two Finite Transmission
Zeros,” IEEE Trans. Microwave Theory Tech., Vol. 51,
No. 2, pp. 337-341, Feb. 2003.
15. Chun-Fu Chang and Shyh-Jong Chung, “Bandpass Filter
of Serial Configuration With Two Finite Transmission
Zeros Using LTCC Technology,” IEEE Trans. Microwave
Theory Tech., Vol. 53, No. 7, pp. 2383-2388, July 2005.
16. Toshio Ishizaki, Mitsuhioro Fujita, Hiroshi Kagata,
Tomoki Uwano, and Hideyuki Miyake, “A Very Small
Dielectric Planar Filter for Portable Telephones,”
IEEE Trans. Microwave Theory Tech., Vol. 42, No. 11,
pp. 2017-2022, Nov. 1994.
17. T. Ishizaki and T. Uwano, “A Stepped Impedance Comb-
Line Filter Fabricated by Using Ceramic Lamination
Technique,” IEEE MTT-S Int. Microwave Symp. Dig., San
Diego, CA, May 1994, pp.617-620.
18. K. Rambabu and Jens Bornemann, “Simplified Analysis
Technique for the Initial Design of LTCC Filters With
All-Capacitive Coupling,” IEEE Trans Microwave Theory
Tech., Vol. 53, No. 5, pp. 1787-1791, May. 2005.
19. 余俊璋, “小型化、低損耗三零點低溫陶瓷共燒梳型濾波器研
究”, 國立成功大學資源工程研究所碩士論文,2006
20. Thomas M. Feichtinger, Markus Rath, Thomas
Purstinger, and Gunter F. Engel, “Highly Integrated
Multilayer Varistors for ESD/EMI Filtering
Applications,” CARTS USA, p113-125, Apr. 2006
21. W.J.Huppmann and G.Guillon, ”The Elementary
Mechanisms of Liquid Sintering”,Sintering
Processes,Plenum Press,p.189-02,1979
22. H.S.Cannon and F.V.Lenel in”Proceedings of the
Plansee Seminar”Edit by F.Benesovsky Metallwerk
Plansee,Reutte, p.106, 1953
23. Qun Zeng, Wei Li,w Jian-lin Shi, and Jing-kun Guo,
“Microwave Dielectric Properties of 5Li2O–0.583Nb2O5–
3.248TiO2 Ceramics with V2O5 ,“ J. Am. Ceram. Soc.,
89 [10] 3305–3307, Oct 2006
24. LISA C. SLETSON, MIKE E. POTTER, and MOHAMMAD A.
ALIM, “Influence of sintering on microstructure and
electrical properties of ZnO-based multilayer
varistor,” J. Am. Crmm. Soc., 71 [11] 909-13, Nov 1988
25. C.-W. Nahm, “The effect of sintering temperature on
varistor properties of (Pr, Co, Cr, Y, Al)-doped ZnO
ceramics,” Materials Letters 62 (2008) 4440–4442
26. V.P.RABDE, “Metal Oxide Varistors as Surge
Suppressors,” 81-900652-0-3/97 Rs.40.00, p315-319,
1997
27. Joe Wong, “Microstructure and phase transformation
in a highly non-ohmic metal oxide varistor ceramic,”
Journal of Applied Physics, Vol.46, No.4,p1653-1659,
1975