本論文採用低溫氣相冷凝系統製備氧化鋅n-i-p光偵測器。藉由將氧化鉭摻入氧化鋅之化合物薄膜當光偵測器之吸收層可以有效降低元件之雜訊均方電流而提升氧化鋅n-i-p光偵測器之偵測度。此外，利用直徑兩百奈米之氧化鋁多孔洞模板製作奈米柱結構應用於氧化鋅n-i-p奈米柱陣列光偵測器更可大幅增加光偵測器的偵測表面積以提升偵測特性。雖然奈米結構具有大幅增加光偵測器的偵測面積的優勢，但由於氧化鋅奈米柱陣列表面所存在的大量懸鍵與界面態位，將同時造成較大的漏電流及高的雜訊均方電流。為降低存在於氧化鋅奈米柱表面之界面態位及缺陷，本研究利用光電化學氧化法直接對氧化鋅表面的懸鍵與界面態位進行護佈。
本論文研究氧化鉭摻入氧化鋅合成的化合物吸收薄膜及光電化學氧化法製作成的異質結構氧化鋅n-i-p (n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3)光偵測器之偵測及雜訊特性，為了比較氧化鉭摻入氧化鋅合成的化合物薄膜及光電化學氧化法之特性提升效果，將製作同質結構之氧化鋅n-i-p (n-ZnO:In/i-ZnO/p-ZnO:LiNO3)光偵測器及未使用光電化學氧化法之氧化鋅n-i-p (n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3)光偵測器。相較於其它氧化鋅光偵測器，使用光電化學氧化法之氧化鋅n-i-p (n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3)光偵測器在逆偏壓5伏的條件下，動態電阻值為6.02×1012 Ω，光響應度為0.11 A/W及偵測度為6.66×1013 cmHz1/2W−1均優於其它氧化鋅光偵測器。由實驗結果發現，氧化鋅n-i-p光偵測器可以藉由使用氧化鉭摻入氧化鋅合成的化合物有較高的薄膜品質且具有高電阻值作為吸收薄膜及利用光電化學氧化法來製備元件以提升其動態電阻、光響應度及雜訊特性。
近幾年投入了大量的研究於奈米結構光偵測器。相較於傳統的氧化鋅n-i-p光偵測器，氧化鋅奈米柱擁有較大的表面積-體積比及其存在於氧化鋅奈米柱表面大量的懸鍵與界面態位，使得氧化鋅n-i-p奈米柱陣列光偵測器擁有較大的效率-增益值乘積。氧化鋅n-i-p (n-ZnO:In nanorod/i-ZnO nanorod/p-GaN)奈米柱陣列光偵測器之光響應度在逆偏壓5伏的條件下為3.0×103 A/W及其對應效率-增益值乘積為1.1×104此數值較氧化鋅n-i-p光偵測器大。使用光電化學氧化法直接護佈氧化鋅n-i-p奈米柱陣列表面，可以有效提升氧化鋅n-i-p奈米柱陣列光偵測器之特性。其光偵測器之光響應度在逆偏壓5伏為4.60×102 A/W，其偵測度為1.43×1015 cmHz1/2W−1。

In this dissertation, the ZnO-based n-i-p photodetectors were successfully fabricated using the vapor cooling condensation system. To improve performance of the ZnO-based n-i-p photodetectors, the compound of Zn3Ta2O5 deposited as the absorption layer was utilized to decrease mean square noise current and improve the specific detectivity of the ZnO-based n-i-p photodetectors due to its great film quality. To increase the sensing area, the anodic alumina membrane (AAM) plate with a pore diameter of 200 nm was used as the templet to grow nanostructured to increase surface-to-volume ratio of the ZnO-based n-i-p nanorod array photodetectors. However, although the ZnO-based n-i-p nanorod array photodetectors possessed the large surface-to-volume ratio, a large leakage current and a high mean square noise current were arose at the same time, which were also related with the abundant surface states resided on the ZnO nanorods. To reduce the surface states and the native defects resided on the sidewall surface of the ZnO nanorod, the photoelectrochemical (PEC) oxidation method was used to directly passivate the sidewall surface of the ZnO-based n-i-p nanorod array photodetectors.
To investigate sensing and noise performances of the heterostructured ZnO-based n-i-p (n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3) photodetectors with PEC oxidation passivation, both the homostructured ZnO-based n-i-p (n-ZnO:In/i-ZnO/p-ZnO:LiNO3) photodetectors and heterostructured ZnO-based n-i-p (n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3) photodetectors without PEC oxidation passivation were fabricated on sapphire substrates to compare. Among the three ZnO-based n-i-p photodetecotors, the passivated heterostructured ZnO-based n-i-p (n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3) photodetectors showed the high dynamic resistance of 6.02×1012 Ω, the peak photoresponsivity of 0.11 A/W, and the high specific detectivity of 6.66×1013 cmHz1/2W−1 at reverse bias voltage of −5 V. The dynamic resistance, the photoresponsivity and the noise performances of the unpassivated and passivated ZnO-based n-i-p photodetectors were all improved by the function of the high quality Zn3Ta2O5 absorption layer and the PEC oxidation method.
The nano-structured photodetectors have been receiving more attention recently. Compared to the conventional ZnO-based n-i-p photodetectors, the ZnO-based n-i-p (n-ZnO:In nanorod/i-ZnO nanorod/p-GaN) nanorod array photodetectors exhibited an important advantage of high efficiency-gain product. The high efficiency-gain (E.G) product was caused by the large surface-to-volume ratio and the surface band bending induced by the presence of deep level trap states resided on the sidewall surface. The peak photoresponsivity of the ZnO-based n-i-p (n-ZnO:In nanorod/i-ZnO nanorod/p-GaN) nanorod array photodetectors operated at reverse bias voltage of −5 V was about 3.0×103 A/W, which was larger than the ZnO-based n-i-p photodetectors. The corresponding efficiency-gain (E.G) product was 1.1×104.
Finally, the PEC oxidation method was used to directly passivate the sidewall surface of the ZnO-based n-i-p (n-ZnO:In nanorod/i-ZnO nanorod/p-GaN) nanorod array photodetectors. The passivated ZnO-based n-i-p (n-ZnO:In nanorod/i-ZnO nanorod/p-GaN) nanorod array photodetectors showed the high photoresponsivity of 4.60×102 A/W and the high specific detectivity of 1.43×1015 cmHz1/2W−1 at reverse bias voltage of −5 V.

Chapter 1
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Chapter 3
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Chapter 4
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