本論文中，我們選用MoS2取代三維半導體，並結合塔姆電漿共振應用於金-半-金光感測器中，成功製作出具有高波長選擇性之近紅外光感測器。
首先，使用CST光學模擬軟體設計DBR結構，再製作出TiO2/SiO2組成之DBR，其反射率達99.5%，中心波長約在933nm。再透過CST找到合適參數後，於最後一層DBR上鍍有5nm/30nm之Ni/Au，量測反射頻譜後，發現有一半高寬極窄之反射谷位於1012nm，此即塔姆電漿共振，其反射率達56.3%。接著再以CST嘗試模擬不同材料厚度與組成對於塔姆電漿共振與電場之影響。
接下來，我們使用二維材料機械剝離法，將MoS2轉印於目標基板之上，包括上述設計之DBR基板與一般基板TiO2鍍於藍寶石基板），再製作指叉結構。此時，我們具有四組結構，包含有/無塔姆電漿共振、指叉結構中有/無MoS2材料，分別對其進行光暗電流量測，發現僅有主動層是MoS2，且基板為DBR之元件對於光源有明顯反應。
最後，將唯一對於光照有反應的元件之光電流進行歸一化後，將其光響應與監控片之反射頻譜相比，發現波段與塔姆電漿共振十分接近，推測是塔姆電漿共振產生之熱載子，部分熱載子成功越過金-半能障，順利注入半導體之導帶中，提升光電效率，成功製作出具有高波長選擇性之近紅外光感測器。

In this study, we propose a MoS2-based photodetector integrated with Tamm plasmon resonance using nickel/gold layer and 9 pairs of TiO2/SiO2 DBRs. Optical measurement results show high absorption (56.3%) with a narrow FWHM at 1012nm, that is Tamm plasmon resonance. The photoresponsivity measurement shows that there is a maximum photoresponsivity at 1020nm. In other words, the incident light in the wavelength range of 1020nm can fully excite the TPR and maximize the responsivity of the device. Thus, we successfully produced a near-infrared photodetector with high wavelength selectivity.

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