本論文使用非真空製程製備太陽能電池之吸收層與緩衝層的先驅物薄膜，藉由回火製程參數調變，使薄膜再結晶，提升薄膜之結晶顆粒大小並減少晶格邊界與內部缺陷的問題，改善後轉換效率達到3.77%。
本實驗製備之硫化鎘薄膜，原子經回火製程提供之熱能，修復晶粒間之孔隙，提高結晶品質與電性，回火溫度提高到350℃，薄膜變得緻密，電阻率也從4698Ωcm降至8.44Ωcm。實驗中採共電鍍製備CIS先驅膜，並以兩階段硒化處理提升薄膜品質，以500℃進行硒化，可得較大的晶粒與一致的薄膜，其元件效率達0.77%，將硒化氣壓調至30torr使薄膜組成更接近化學劑量比，抑制內部二次相的生成同時提升Voc與Isc使效率推升到1.3%，為了抑制因快速冷卻所導致之孔隙，調整降溫速率到2℃/s，載子移動路徑減短，降低串聯電阻，Voc從0.196V提升到0.287V，效率達到2.29%，後以碘溶液對薄膜表面進行鈍化後，效率升至3.77%。

CuInSe2 films were fabricated on Mo-coated glass by electro-deposition and selenization processes. The CuInSe2 precursors were selenized at different temperature to enhance the quality and crystallinity. In order to improve the performance of CuInSe2 thin film solar cell, the chemical composition of CuInSe2 absorption layer under different selenization pressure were studied. The relationship between temperature dropping rate and open circuit voltage (Voc) of solar cells was investigated. The value of the Voc was also improved by KCN and I solution surface treatment, sequentially. The solar cell with the AZO/CdS/CIS/Mo/Glass structure was fabricated and the conversion efficiency of 2.82% was obtained.

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