本研究探討互補式薄膜電晶體之特性與運用，主要分為三部份。首先製作P型薄膜電晶體，此元件將承襲本實驗室過去之相關研究利用氧化鎳(NiO)材料作為通道層，其主要是增加氧化鎳之氧氣流量使其導電變佳，並藉由調變射頻功率找出最佳之載子遷移率，所製作之元件臨限電壓值(V_th)為-3.7 V，在VSG=10 V時，最大飽和電流為-77 μA，電流開關比為106。
接續探討N型薄膜電晶體之特性，N型通道層以鋁(Al)摻雜氧化鋅(ZnO)作為該通道之薄膜，主要因鋁摻雜氧化鋅薄膜能使導電性變佳，藉由調變鋁摻雜之射頻功率，可調整N型薄膜之載子濃度使電晶體為增強型元件，而經由200℃熱退火3分鐘之臨限電壓值(V_th)為2.7 V，在VGS=10 V時，最大飽和電流為462 μA，電流開關比為106，為了使元件達到電流匹配特性，將調變腔壓參數使載子遷移率調整為互補式薄膜電晶體所需之參數。
最後將P型與N型電晶體元件進行堆疊，其元件在飽和區之電流比例分別為6、3與1倍，並且經由輸出/輸入轉移曲線中，可觀察得知互補式薄膜電晶體元件在1倍的操作電流比例下具有較好的反相器輸出特性，操作於V_DD=10 V下，雜訊邊際(noise margin)的〖NM〗_H= 2.7 V、〖NM〗_L=2.2 V，而在VIN = VOUT時之VM值大約落於5 V位置，達到無偏斜反相器的輸出特性。在此堆疊反向器元件中， P型與N型兩電晶體長寬比皆相同情況下，調整N型通道層之參數，使得兩顆元件電流匹配，藉由此調變電流比例的做法，成功達到P型與N型元件以堆疊方式進行製作，使完成互補式薄膜電晶體元件之無偏斜反相器的輸出特性及面積尺寸有效降低，形成尺寸微縮之優勢。

In this study, to explore characteristics and application of complementary thin film transistors (CTFTs) were mainly divided into three parts. First, the p-channel thin-film transistor (TFT) is designed and fabricated by using NiO thin film as channel layer. Second, to explore characteristics of the n-channel TFT. The n-channel layer is using Al-doped ZnO thin film as channel layer. Finally, we stacked the p-type and n-type TFT, and measured characteristics. We compare different n-type TFT characteristic of the CTFT characteristic to adjust an unskewed inverter. The CTFTs operated as an unskewed inverter that the β is 1. The noise margin high and low were about 2.7 V and 2.2 V, respectively. And when the input signal was 10 V, the midpoint voltage (VM) was 4.9 V, which close to value of VDD/2. The three-dimensionally stacked CTFTs have smaller devices size than the planar CTFTs. The stacked CTFTs can reduce the area required also have the great characteristics.

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第四章 實驗結果與討論
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