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研究生： 陳圳昇
Chen, Tsun-Sheng
論文名稱： CuInSe2奈米粒子合成及其元件製作之研究
A Study on the Synthesis of CuInSe2 Nanoparticles and the Fabrication of CuInSe2 Solar Cell
指導教授： 李文熙
Lee, Wen-Hsi
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2011
畢業學年度： 99
語文別： 中文
論文頁數： 97
中文關鍵詞： 二硒化銅銦 、太陽能電池 、溶熱法 、熱注射法
外文關鍵詞： CuInSe2, Solar Cell, Solvothermal, Hot Injection
相關次數： 點閱：86  下載：4 
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    • 本實驗欲利用非真空製程製作CuInSe2吸收層，實驗之主要目的有二：一為比較兩種方式製作奈米粒子之溫度、時間以及兩者差異，二為藉由後續熱退火之溫度、時間探討，達到吸收層大晶粒且緻密的效果。

    首先利用溶熱法及熱注射法製備奈米粒子，探討各溫度、時間所合成之奈米粒子，以XRD、EDS確認其組成比例以及相成分；並將奈米粒子球磨分散且製作成漿料，抓取分散劑以及黏結劑與粉末比例的參數，而此漿料的製備有助於噴塗、刮刀、旋轉塗佈等製程方式的使用，對於太陽能電池大面積的製作以及軟性基板的應用，都有顯著的幫助；以此漿料旋轉塗佈於鉬電極上，抓取最佳的轉數，並採用高溫爐以及快速升溫爐(RTA)進行退火，分析不同退火溫度、時間、壓力之微結構、相成分以及電性的差別，利用SEM、EDS、XRD、Raman、AFM等儀器分析，找出最佳之參數，期望能達到真空製程製備吸收層大晶粒的效果；並製作成元件，量測其實際轉換的效率為何。

    粉末方面，可發現溶熱法在180℃,24小時以上，熱注射法在285℃,1小時以上，皆可合成出結晶相明顯的黃銅礦結構；退火方面，可發現其增加升溫速率、提高壓力、增加硒粉量以及拉長退火時間皆有助於晶粒之成長，且熱注射法之微結構相較於溶熱法也較平整，PN特性曲線較明顯；元件方面，量得其轉換效率分別為0.821%以及0.675%，對於其串、並聯電阻仍有改善的空間。

    In the research, we attempt to use the non-vacuum process to fabricate the CuInSe2 layer. One object is comparing the nanoparticles which is synthesized by Solvothermal and Hot-Injection method. The other object is to get the large and dense grain.
    First, we synthesize the powders by two methods and analyze the effect of time and temperature. Energy dispersive spectroscopy (EDS) was used to estimate the composition of the powders and thin films. The crystal structure and second phases of the powders and thin films were identified by powder x-ray diffraction (XRD).Then, the powders were dispersed in ethanol or toluene to form the paste. The amount of dispersant and binder were adjusted to form the stably dispersive paste.
    The films were coated by spin coater and annealed by furnace. We changed the temperature, time and pressure to get the large and dense grain. The microstructure was observed by scanning electron microscope (SEM). The roughness was measured by atomic force microscope (AFM).
    Finally, we fabricate the CuInSe2 solar cell. We can get the PN characteristics by the measurement of the dark current. And the efficiency of solvothermal and hot injection methods are 0.821% and 0.675% respectively.

    摘要 ii 第一章 緒論 1 1-1 背景 1 1-2研究動機與目的 4 第二章 文獻回顧與原理 5 2-1太陽能電池工作原理[5] 5 2-2 二硒化銅銦薄膜介紹 11 2-3 水(溶)熱法[13] 14 2-4 熱注射法 16 第三章 實驗方法與步驟 17 3-1 實驗材料 17 3-2 實驗設備 18 3-2.1 磁石攪拌平台 18 3-2.2 薄膜濺鍍系統(Sputtering System) 19 3-2.3 旋轉塗佈機(Spin Coater) 20 3-2.4 烘箱 21 3-2.5 高溫爐 21 3-2.6 快速升溫爐(Rapid Thermal Annealing) 22 3-3 實驗流程 23 3-3.1 清洗基板 23 3-3.2 濺鍍鉬背電極 23 3-3.3 溶熱法製備CuInSe2粉末 24 3-3.4 熱注射法製備CuInSe2粉末 24 3-3.5 沉降實驗 26 3-3.6 旋轉塗佈成膜 27 3-3.7 高溫爐及RTA退火 27 3-3.8 化學水浴法製備硫化鎘 27 3-3.9 製備ZnO以及AZO 28 3-3.10 製備上電極鎳(Ni)層 28 3-4鍍層分析儀器 29 3-4.1 X-Ray粉墨繞射儀 (Powder X-ray Diffraction)[33] 29 3-4.2掃描式電子顯微鏡[34](Scanning Electron Microscope ; SEM) 29 3-4.3能量分散光譜儀[34](Energy Dispersive Spectroscopy；EDS) 31 3-4.4紫外光/可見光光譜儀(UV-VIS-NIR Spectrophotometer) 31 3-4.5拉曼光譜儀[34] 32 3-4.6 α-step 膜厚計 33 3-4.7四點探針[36] 34 3-4.8霍爾量測( Hall Effect Measurement) 35 3-4.9 原子力顯微鏡(Atomic Force Microscopy；AFM) 38 第四章 實驗結果與討論 39 4-1 溶熱法合成CuInSe2粉末 39 4-1.1改變不同溶劑的影響 39 4-1.2 改變不同合成溫度的影響 40 4-1.3 改變不同合成時間的影響 42 4-1.4 溶熱法粉末之UV-VIS分析 44 4-1.5 不同溶劑量(乙二胺)的影響 46 4-1.6 不同溶質量的影響 47 4-2 熱注射法合成CuInSe2粉末 49 4-2.1 改變不同反應溫度的影響 49 4-2.2 改變不同反應時間的影響 52 4-2.3 熱注射法粉末之UV-VIS分析 55 4-3 沉降實驗 58 4-3.1 溶熱法粉末沉降實驗 58 4-3.2 熱注射法粉末沉降實驗 60 4-4 熱注射法粉末所製備試片之熱退火 64 4-4.1 改變不同退火溫度以及時間之特性量測 64 4-4.2 改變退火之不同升溫速度 68 4-4.3 改變不同退火壓力之特性量測 73 4-5 溶熱法粉末所製備試片之熱退火 76 4-6 UV-VIS之分析 79 4-6.1 溶熱法粉末製備之試片UV-VIS分析 79 4-6.2 熱注射法粉末製備之試片UV-VIS分析 80 4-7 霍爾量測(Hall measurement)之分析 81 4-8 拉曼光譜儀( Raman)分析 86 4-9 原子力顯微鏡(AFM)之分析 87 4-10元件製作 90 第五章 結論 93 第六章 文獻 95

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