近年來薄膜型太陽能電池的研究主要在於效率的提升以及尋找新的材料來取代原有的材料，以銅銦鎵硒（CIGS）為例，由於銅銦鎵硒的材料昂貴，具有高危險性等缺點，因此，本研究使用銅鋅錫硫來替代銅銦鎵硒，做為薄膜太陽能電池的吸收層。本研究中使用分層電鍍法來製備銅、鋅與錫等前驅物。再通硫化氫氣體於高溫熱處理爐中，將硫元素沉積在基板上，產生銅鋅錫硫四元相的吸收層，再透過X光繞射儀（XRD）與拉曼光譜儀（Raman Spectroscopy）分析其晶體結構、掃描式電子顯微鏡（SEM）來觀測表面型態、能量分散光譜儀（EDS）來分析元素組成比例，透過這些分析儀器可以驗證本研究所製備的吸收層銅鋅錫硫的正確性。
本研究使用許多不同的條件下的參數來製備前驅物，其中包括鍍膜厚度、鍍層的堆疊順序與硫化條件等不同，嘗試找出一組較佳的製程參數，並運用此製程參數所製備的前驅物來做太陽能電池元件的主要吸收層，再堆疊出後續的緩衝層（CdS）、透光層（AZO）與電極層（Al），進而做出完整的太陽能電池元件。

Nowadays, people try to improve efficiency and find new material to replace the original material on research of thin film solar cells. For example about Cu(In,Ga)Se2（CIGS）,due to it has high cost and toxicity these two defects. Therefore, Cu2ZnSnS4(CZTS) was taken as a thin film solar cell absorber layer in the research. This thesis used layer by layer electrodeposition method to fabricate precursors (Cu, Sn and Zn). The precursors were sulfurized by annealing in H2S gas atmosphere, and it would be deposited Sulfur on the precursors, then the precursors would recombine with a new quaternion phases(Cu2ZnSnS4). The Cu2ZnSnS4 (CZTS) thin films were analyzed and verified by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS).
In this research, several conditions were used to fabricate the precursors, including thickness of the thin film, sequence of the metal layers and sulfurization conditions to try finding proper parameters in processing, and using them to fabricate the main absorber layer of the solar cells. And then, these main layer was deposited another layers, such as buffer layer(CdS), window layer(AZO) and metal electrode(Al). Finally, solar cell devices were fabricated completely.

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