傳統上，利用微機電技術製作高深寬比之矽微結構時，多是以乾式蝕刻中之感應耦合電漿離子蝕刻(ICP-RIE)技術來完成，但由於此套製程設備成本相當的昂貴(約1200~2000萬/台)，再加上其加工及維護成本均高，所以在一般學術單位中取得並不容易。
基於上述，本研究利用自行開發之低成本電化學蝕刻(ECE)設備，順利測得相關製程之最佳參數。由實驗結果已驗證，在利用電化學蝕刻技術製作高深寬比微孔洞陣列方面，當蝕刻時間達到7小時，可得高深寬比達約40左右之結構，證明利用此技術已能局部取代乾式蝕刻之應用領域。除此之外，藉由相關製程參數的調變，更能達成微懸浮結構之製作。
在以電化學蝕刻技術製作靜電式微梳狀致動器方面，本研究於結構中利用結構補償(開放及輔助結構)之方式，順利克服電化學蝕刻時，結構尺寸限制及底切的問題。另外，在蝕刻液中添加兩種不同性質的界面活性劑，對於因蝕刻造成的底切現象及結構側壁之保護，有相當顯著的幫助。因而大幅地提升利用電化學蝕刻技術製作微機電元件之可行性。
最後在利用電性驅動微梳狀致動器時，在電極距4 m、梳子重疊長度28 m及梳子長度為32 m之微梳狀致動器方面，以2.2V之交流電驅動下，其單邊最大的致動距離可達2 m左右的行程。由此一結果，成功地實現利用電化學蝕刻技術製作靜電式微致動器之最終目的。

Traditionally, we usually use the inductively coupled plasma reactive ion etching (ICP-RIE) technology of dry etching when fabricating high aspect of silicon structures in Micro Electro Mechanical System (MEMS). However,the fabricating equipment is very expensive (about 12-20 millions each set) and the costs of manufacturing and maintaining the equipments are quite high. Therefore, it，s not easy to get this equipment in common science departments.
Because of the above-mentioned, this research used the low-cost electrochemical etching (ECE) equipment developed by ourselves and got the best parameters of the related manufacture. The experiment result proved that the technology had been able to partially replace the dry etching technology. Using the ECE technology to fabricate high aspect of micro-pores array, we can get the structures of high aspect about 40 when the etching time reached 7 hours. Besides, we can make the micro free standing structures by adjusting the correlated parameters.
In the dimension of fabricating the electrostatic micro comb-driver actuator with the ECE technology, this research had successfully resolved the problem of size limit and under-cutting in ECE by using the compensated structures (open and assisted structures). In the other hand, it worked obviously to improve the under-cutting situation and side-wall protection in etching by adding two surfactants of different characters in the etching solution. Consequently, the possibility to fabricate the element of MEMS with ECE technology became higher.
At last, when we used the electrostatic micro comb-drive actuator of 4 m electrode gap, 28 m folded beam length and 32 m comb finger length, the maximum unilateral driving distance could be about 2 m with 2.2 V alternating current. Thus it can be seen that we had achieved the final purpose of using the ECE technology to fabricate the electrostatic micro actuator.

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