在西元2001 年，美國聯邦通訊委員會(Federal Communication Commission， FCC)開放57-GHz到64-GHz(共7-GHz 頻寬)給高速無線通訊應用使用。由於是不需註冊使用的免付費頻帶，預料將帶來許多的商機。近幾年來，已有少數利用SiGe BiCMOS 製程與 III-V半導體製程的60-GHz WPAN收發機被順利研發成功。此外，由於CMOS技術不斷的演進，因此其Cut-off頻率甚至已經高達60-GHz ~ 100-GHz。然而，以CMOS來實現這樣的電路仍然存在著許多挑戰。因此，本論文首先簡介60-GHz WPAN 的架構與說明一些重要常用之射頻被動元件如變容器(Varactors)與平面螺旋電感(Planar spiral inductors)的特性。此外，基本的傳輸線觀念也在此簡略的描述。由於想找出甚麼樣的壓控振盪器架構最適合我們在60-GHz WPAN上的需求；因此我們對目前常見的壓控振盪器架構做了廣泛性的比較。藉由比較的結果，我們實際製作了兩顆分別工作於K 及 Ka 頻帶的壓控振盪器去驗證我們當初的假設。首先，我們利用0.18um 標準 RF CMOS製程完成了一顆可操作在K頻帶的壓控振盪器。為了具有較好的特性，我們利用了駐波觀念的技巧。藉著駐波的架構，在20.8 GHz 的操作頻率下，相位雜訊在1MHz位移頻率時皆有-113 dBc/Hz以下的表現。接著，我們利用相同的製程完成了一顆可操作於Ka頻帶的壓控振盪器。藉由一些特殊的技巧與想法，由量測結果顯示一個可適用於60-GHz WPAN下應用的27.03 GHz壓控振盪器，其在位移頻率為1MHz時相位雜訊具有-115 dBc/Hz以下的表現。最後，我們可以使用倍頻技巧，則這個壓控振盪器恰好適用於60-GHz WPAN下的應用。

In 2001, FCC (American Federal Communication Commission, FCC) has opened the mm-wave band of 57-GHz ~ 64-GHz (total 7-GHz bandwidth) for the application of high speed wireless communication use. Because of this frequency band is unlicensed, it is expected that there are a lot of businesses opportunities. Recently, several transceivers ICs have been implemented in SiGe BiCMOS and III-V compound semiconductor technologies for the 60-GHz WPAN application. Additionally, because that the performance of CMOS processes is improving consistently, the cut-off frequencies (i.e. the transistors operation frequency at which the current gain of transistor is unity) of CMOS are up to 60-GHz ~ 100-GHz. This makes mm-wave CMOS transceivers be possible. Nevertheless, it still remains some challenges for such transceiver circuits to be integrated by a standard CMOS process.
Consequently, this thesis introduces the 60-GHz WPAN structure and discusses the characteristics of the passive RF elements such as varactors and planar spiral inductors. Furthermore, the fundamental of transmission line has been stated. In order to chose the best VCO circuit type for the requirement of 60-GHz WPAN applications, we make a widely comparison among a variety types of VCO. Accordingly, we implement the design of VCOs for K-band and Ka-band, respectively, to justify our ideas. Firstly, a K-band VCO is demonstrated in a standard 0.18 um RF CMOS 1P6M technology. In order to achieve the better performance, the standing-wave based technique is adopted. A phase noise better than -113 dBc/Hz at 1MHz offset is achieved at the operation frequency of 20.8 GHz. Secondly, a Ka-band VCO is demonstrated also in the same process. By some techniques and ideas, an improved experimental result exhibits a phase noise -115 dBc/Hz at 1MHz offset is achieved when the operation frequency is 27.03 GHz. Using the frequency multiple techniques, this VCO is suitable for the 60-GHz WPAN applications.

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