CuSCN是一種無機的p型半導體，具有電洞傳輸、高光學透明度、寬帶隙 (>3.4 eV)和良好熱穩定性等特性，這些性質讓CuSCN成為理想的電洞傳輸層(HTL)，而Y2O3具有優異的熱力學穩定性，而且是一種相對便宜且環保的稀土氧化物，並可以提高電子轉移速率，因此選擇作為本研究的材料。本研究第一部分使用硫氰酸亞銅(CuSCN)混和Y2O3，在ITO基板上利用旋轉塗佈法製作而成，本研究的第一部分中以UV-vis、SEM、EDS及循環伏安法來探討CuSCN混和Y2O3的材料機制。EDS分析中證明了Y2O3混合入了CuSCN裡進而取代銅增加導電性及載子遷移率。研究發現在2%混合的Y2O3有著最小的價帶邊緣(為5.28eV)。同時隨著混和比例增加，在2%時有著最緻密的表面形貌。在電導率的部分，獲得了最高為764 S cm−1。
我們利用第一部分的結果製造了P-I-N自供電的UV光電感測器，其結構為ITO substrate/ZnO seed layer/ZnO nanorod/CsPbBr3/CuSCN mixed Y2O3/Ag，以4155C來量測元件的特性。在響應時間上，上升時間和下降時間從原先的26 ms/22 ms，降低至9 ms/5 ms；響應度從452 mA/W增加到685 mA/W，開/關比增加到 2.47x106。結果表明，Y2O3的混合有助於提高P-I-N光電探測器的裝置性能。

CuSCN is an inorganic p-type semiconductor with the properties of hole transport, high optical transparency, wide bandgap (>3.4 eV), and good thermal stability, which make CuSCN an ideal hole transport layer (HTL), while Y2O3 has excellent thermal stability, and it is a relatively inexpensive and environmentally friendly rare-earth oxide with the capability to enhance the electron transfer rate, and therefore chosen as the material for this study. In the first part of this study, copper thiocyanate (CuSCN) mixed with Y2O3 was fabricated on ITO substrate by rotational coating method, and UV-vis、SEM、EDS and cyclic voltammetry were used to investigate the material mechanism of the mixture of CuSCN and Y2O3 in the first part of this study, and it was proved that the Y2O3 mixed with CuSCN replaces Cu in EDS analysis. The conductivity and carrier mobility are increased. It is found that Y2O3 mixed at 2% has the smallest valence band edge (5.28 eV). Meanwhile, with the increase of mixing ratio, the densest surface morphology is obtained at 2%. In the conductivity section, the highest value of 764 S cm-1 was obtained.
We fabricated a P-I-N self-powered UV photoelectric sensor with the structure of ITO substrate/ZnO seed layer/ZnO nanorod/CsPbBr3/CuSCN mixed Y2O3/Ag using the results of the first part to measure the characteristics of the device at 4155C. In terms of response time, the rise time and fall time decreased from the original 26 ms/22 ms to 9 ms/5 ms; the response increased from 452 mA/W to 685 mA/W, and the on/off ratio increased to 2.47x105. The results showed that the mixing of Y2O3 helps to improve the device performance of the P-I-N photodetector.

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