本論文首先使用TSMC 0.18μm CMOS製程，實現高隔離度低雜訊放大器，本次設計主要利用變壓器回授機制消除米勒電容，以提高反向隔離度與縮小整體晶片面積。經量測後變壓器回授之低雜訊放大器的增益在射頻頻率操作於23GHz為10.2 dB，反向隔離度高達50dB，雜訊指數為5.2dB，功率消耗為5.4mW，晶片面積為0.47×0.47mm2。
　　第二部份延續先前提出的低雜訊放大器使用TSMC 90nm CMOS製程，實現寬頻低雜訊放大器，以寬頻負載耦合諧振腔方式改善毫米波頻段之低雜訊放大器。模擬之寬頻低雜訊放大器的增益在射頻頻率操作於54-67 GHz為16.1dB，雜訊指數為5.5dB，功率消耗為10.2mW，晶片面積為0.5×0.5mm2。
　　第三部份使用TSMC 0.18μm CMOS製程，實現低功耗壓控振盪器，以閘基耦合技術，同時耦合閘極與基體，使等效轉導增大而降低相位雜訊與功率消耗，並加入差動壓控技術來改善壓控振盪器的相位雜訊特性並不額外消耗電路功率。量測之低功耗壓控振盪器在射頻頻率操作於4.91-5.45G Hz，輸出功率為0.97dBm，相位雜訊為-134.3 dBc/Hz，功率消耗為1.56 mW，優化指數(FOM)高達-196.5 dBc/Hz，晶片面積為0.6×0.6mm2。
　　第四部份使用Transcom 0.25μm GaN PHEMT製程，實現具抑制二次諧波能力之微型化平衡-不平衡電路，本次設計利用兩組耦合線之耦合來達到兩輸出端的差動訊號，並於輸入端加入電感來達到抑制二次諧波優點。經量測後微小化巴倫電路在射頻頻率操作於10GHz，反射損耗為-10.3dB，插入損耗為-4.5dB，相位差為180°±2°，二次諧波抑制為-50dB，晶片面積為0.7×0.83mm2。

A high isolation low noise amplifier (LNA) by using the transformer feedback to neutralize the Miller capacitance is implemented by a TSMC 0.18 μm CMOS process. High isolation and reduced chip size can be achieved. The measured results show that the gain is 10 dB, isolation is higher than 50 dB, noise figure is 5.2 dB, and the power consumption is 5.4 mW at 23 GHz. The chip size is 0.47×0.47 mm2.
A millimeterwave LNA using the LC tank to enhance the broadband operation implemented by a TSMC CMOS 90 nm process is proposed. The simulated results show that the gain is 16.1 dB, noise figure is 5.5 dB, and the power consumption is 10.2 mW from the RF bandwidth 54 to 67 GHz. The chip size is 0.5×0.5mm2.
To enhance the performance of phase noise and power consumption, the voltage controlled oscillator employing the body bias technology to couple the gate and body implemented by a TSMC 0.18 μm CMOS process is presented. Differential technology is also employed to improve the phase noise. The measured results show that the output power is 0.97 dBm, phase noise is -134.3 dBc/Hz, power consumption is 1.56 mW, and the figure of merit is -196.5 dBc/Hz from the RF bandwidth 4.91to 5.45GHz. The chip size is 0.6×0.6 mm2.
A miniaturized balanced-unbalanced circuit (balun) with second harmonic suppression is achieved by two coupled line and inductor implemented by a Transcom 0.25μm GaN HEMT process. The measured results show that the return loss is 10.3 dB, insertion loss is 4.5 dB, phase difference between two ports is 180°±2°, and the second harmonic suppression is as high as 50dB at 10 GHz. The chip size is 0.7×0.83 mm2.

[1] I. Gresham, A. Jenkins, R. Egri, C. Eswarappa, N. Kinayman, N. Jain, R. Anderson, F. Kolak, R. Wohlert, S. P. Bawell, J. Bennett, and J. P. Lanteri, “Ultra-wideband radar sensors for short-range vehicular applications,” IEEE Trans. Microw. Theory Tech., vol. 52, no. 9, pp. 2105–2122, Sep. 2004.
[2] X. Guan, H. Hashemi, and A. Hajimiri, “A fully integrated 24-GHz eight-element phase-array receiver in silicon,” IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2311–2320, Dec. 2004.
[3] A. W. L. Ng, G. C. T. Leung, Ka. C. Kwork, L. L. K. Leung, and H. C. Luong, “A 1-V 24-GHz 17.5-mW phase-locked loop in a 0.18-μm CMOS process,” IEEE J. Solid-State Circuits, vol. 41, no. 6, pp. 1236–1244, Jun. 2006.
[4] A. Natarajan, A. Komijani, and A. Hajimiri, “A fully integrated 24-GHz phase-array transmitter in CMOS,” IEEE J. Solid-State Circuits, vol. 40, no. 12, pp. 2502–2514, Dec. 2005.
[5] C. Cao, Y. Ding, X. Yang, J. J. Lin, A. K. Verma, and J. Lin, “A 24-GHz transmitter with an on-chip antenna in 130-nm CMOS,” in IEEE VLSI Circuits Symp. Tech. Dig., pp. 148–149, Jun. 2006.
[6] X. Guan and A. Hajimiri, “A 24-GHz CMOS front-end,” IEEE J. Solid-State Circuits, vol. 39, no. 2, pp. 368–373, Feb. 2004.
[7] Y. H. Chen, H. H. Hsieh, and L. H. Lu, “A 24-GHz receiver front end with an LO signal generator in 0.18μm CMOS,” IEEE Trans. Microw. Theory Tech., vol. 56, no. 5, pp. 1043-1051, Feb. 2008.
[8] H. T. Friis, “Noise figure of radio receivers,” Proc. IRE, vol. 32, no. 7, pp. 419-422, Feb. 1944.
[9] B. Razavi, RF Microelectronics, Prentice Hall, 1998.
[10] G. Gonzalez, Microwave Transistor Amplifiers Analysis and Design, 2nd ed., Prentice Hall, 1996.
[11] P. Y. Deng, Y. T. Lo, and J. F. Kiang, “Design of low-power K-band low-noise amplifier in 0.18 μm CMOS,” Int. Conf. Appl. Electromag., Taipei, Taiwan, Aug. 2010.
[12] D. K. Shaeffer and T. H. Lee, “A 1.5-V, 1.5-GHz CMOS low-noise amplifier,” IEEE Journal of Solid-State Circuits, vol. 32, no. 5, May 1997.
[13] C. Y. Cha and S. G. Lee,“A 5.2 GHz LNA in 0.35-μm CMOS utilizing inter-stage series resonance and optimizing the substrate resistance,” IEEE J. Solid-Stat Circuits, vol. 38, pp. 669-672, Apr. 2003.
[14] D. J. Cassan, and J. R. Long, “A 1-V transformer-feedback low-noise amplifier for 5-GHz wireless LAN in 0.18-μm CMOS,” IEEE J. Solid-State Circuits, vol. 38, no. 3, pp. 427–435, Mar. 2003.
[15] T. K. Nguyen, C. H. Kim, G. J. Ihm, M. S. Yang, and S. G. Lee “CMOS low-noise amplifier design optimization techniques,” IEEE Trans. Microw. Theory Techs., vol. 52, pp. 1433-1442, May 2004.
[16] Y. L. Wei, S. Hsu, S. S. H, and J. D. Jin., “A low-noise amplifier for K-band applications,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 2, pp. 116-118, Feb. 2009.
[17] K. W. Yu, Y. L. Lu, D. C. Chang, V. Liang, and M. F. Chang, “K-band low-noise amplifiers using 0.18 μm CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 14, no. 3, pp. 106-108, Mar. 2004.
[18] C. C. Chen, H. Y. Yang, and Y. S. Lin, “A 21-27 GHz CMOS wideband low-noise amplifier with 9.3+/-1.3dB gain and 103.9+/-8.1ps group-delay using standard 0.18μm CMOS technology,” in Proc Radio Wireless Symp., pp. 586-589, Jan. 2009.
[19] W. C. Wang, Z. D. Huang, G. Carchon, A. Mercha, S. Decoutere, D. R. W, and C. Y. Wu, “A 1 V 23 GHz low-noise amplifier in 45 nm planar bulk-CMOS technology with high-Q above-IC inductors,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 5, pp. 326- 328, May. 2009.
[20] M. El-Nozahi, E. Sanchez-Sinencio, and K. Entesari, “A millimeter wave 23–32GHz wideband BiCMOS low-noise amplifier” IEEE J. Solid-State Circuits, vol. 45, no.2, pp. 289–299, Feb. 2010.
[21] H. H. Hsieh, J. H. Wang, and L. H. Lu, “Gain-enhancement techniques for CMOS folded cascode low-noise amplifier at low-voltage operations,” IEEE Trans. Microw. Theory and Techs., vol. 56, no. 8, pp. 1807-1816, Aug. 2008.
[22] C. P. Chang, J. H. Chen, and Y. H. Wang,“A fully integrated 5 GHz low voltage low-noise amplifier using forward body bias technology,” IEEE Microw. Wireless Comp. Lett., vol 19, pp. 176-178, Mar. 2009.
[23] B. Heydari, M. Bohsali, E. Adabi, and A. M. Niknejad, “Low power millimeter wave components up to 104 GHz in 90 nm CMOS,” IEEE ISSCC Dig. Tech. Papers, pp. 200–201, Feb. 2007.
[24] T. Yao, M. Q. Gordon, K. K. W. Tang, K. H. K. Yau, M. T. Yang, P. Schvan, and S. P. Voinigescu, “Algorithmic design of CMOS low-noise amplifier and power amplifier for 60-GHz radio,” IEEE J. Solid-State Circuits, vol. 42, no. 5, pp. 1044–1057, May 2007.
[25] S. Pellerano, Y. Palaskas, and K. Soumyanath, “64 GHz low-noise amplifier with 15.5 dB gain and 6.5 dB NF in 90 nm CMOS,” IEEE J. Solid State, vol. 43, no. 7, Jul. 2008.
[26] P. Y. Chang, S. H. Su, S. S. H. Hsu, W. H. Cho, and Jun. De. Jin, “An ultra low power transformer-feedback 60 GHz low-noise amplifier in 90 nm CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 22, no. 4, Apr. 2012.
[27] T. H. Lee, The Design of CMOS Radio-Frequency Integrated Cirsuits, 2nd ed., Cambridge University Press, 2004.
[28] D.B. Lesson, “A simplified model of feedback oscillator noise spectrum,” Proceedings of the IEEE, vol. 42, Feb. 1965, pp. 329-330.
[29] A. Hajimmiri and T. Lee, “A general theory of phase noise in electrical oscillators, ” IEEE J. Solid-State Circuits, vol. 33, pp179-194, Feb. 1988.

[30] S. W. Yoon and E. C. Park, “5-6 GHz-band GaAs MESFET-based cross-coupleddifferential oscillator MMICs with low phase-noise performance,” IEEE Microw. Wireless Compon. Lett., vol. 11, no. 12, pp. 495–497, Dec. 2001.
[31] M. Borremans, B. De. Muer, and M. Steyaert, “Phase noise up-conversion reduction for integrated CMOS VCOs,” Electron. Lett., vol. 36, pp. 857–858, May 2000.
[32] A. Hajimiri and T. H. Lee, “Phase noise in CMOS differential LC oscillators,”IEEE J. Solid-State Circuits, vol. 34, no. 5, pp. 717–724, May 1998.
[33] B. Soltanian., H. Ainspan, W. Rhee., D. Friedman and P. R. Kinget, “An ultra-compact differentially tuned 6-GHz CMOS LC-VCO With dynamic common-mode feedback” IEEE J. Solid-State Circuits, vol. 42, no. 8, Aug. 2007.
[34] S. Levantino, A. Bonfanti, L. Romano, C. Samori, and A. L. Lacaita, “Differential tuning oscillators with reduced flicker noise upconversion” IEEE ICECS, Dec., pp. 33-36, 2004.
[35] J. A. Hou and Y. H. Wang, “A 5 GHz differential colpitts CMOS VCO using the bottom PMOS cross-coupled current source,” IEEE Microw. Wireless Compon. Lett., vol. 19, pp. 401-403, Jun. 2009.
[36] Y. Shin, T. Kim, S. Kim, S. Jang, and B. Kim, “A low phase noise fully integrated CMOS LC VCO using a large gate length PMOS current source and bias filtering technique for 5-GHz WLAN,” International Symposium on Signals, Systems and Electronics, pp. 521-524, 2007.
[37] T. T. Ta, S. Kameda, T. Takagi and K. Tsubouchi, “A 5GHz band low noise and wide tuning range Si-CMOS VCO,” in Radio Frequency Integrated Circuits Symposium, 2009, pp. 571-574.
[38] Y. J. Moon, Y. S. Roh, C. Y. Jeong, and C. Yoo, “A 4.39~5.26 GHz LC-tank CMOS voltage-controlled oscillator with small VCO-gain variation,” IEEE Microw. Wireless Compon. Lett., vol. 19, pp. 524-526, 2009.
[39] T. Edwards, Foundations for Microstrip Circuits Design, John Wiley & Sons, 1992.
[40] D. M. Pozar, Microw. Engineering, 3rd ed. New York: Wiey,2005.
[41] J. Reed and G. J. Weeler, “A method of analysis of symmetrical four-port networks,”IRE Trans. on Microw. Theory Techns., vol. 4, pp. 246-252, Oct. 1956
[42] E. Davies-Venn and T. Kamgaing, “LC-based wifi and wimax baluns embedded in a multilayer organic flipchip ball grid array (FCBGA) package substrate,” Electronic Components and Technology Conference, pp. 169-174.2008
[43] E. Davies-Venn and T. Kamgaing, “Miniaturized rf transformer-based baluns for 802.11a/b/g WLAN modules embedded in organic package substrate,” IEEE Radio and Wireless Symposium, pp. 359-362, Jan. 2008.