由於低溫、可撓曲和低製作成本的考量，有機薄膜電晶體成為平面顯示器的新選擇。這些電晶體可以應用在陣列式並製作出液晶螢幕、有機發光二極體、電子紙等平面顯示器。因應有機薄膜電晶體低操作電壓、高輸出電流的需求，本篇論文主要是研究與探討將高介電常數的奈米複合材料作為有機薄膜電晶體的絕緣層。利用表面修飾過的奈米二氧化鈦來製作出高品質可以符合溶液製程的高分子/陶瓷介電複合材料以減少漏電流密度並有效的提升介電常數。磷酸根離子可以在鈦離子的表面形成一種強力且緊密的覆蓋率，以作為在奈米粉體表面的分散劑。然而為了克服漏電流的問題，我們採用兩種表面修飾技術:增加修飾層和化學機械研磨藉由金屬/絕緣層/金屬的MIM結構量測其介電特性，並控制奈米複合絕緣層的表面形貌，來解決漏電流的問題，並了解表面修飾工程對奈米複合絕緣層的介電特性與表面形貌之影響，包含了解平整度與漏電流相關性。本研究藉由改變其奈米粉體的含量並且以表面修飾技術改善奈米複合絕緣層的表面特性得到高介電常數且低漏電流(<10-10A/cm2)的絕緣層以應用在有機薄膜電晶體上。
由於絕緣層對有機薄膜電晶體的特性扮演著重要的角色，除了量測奈米複合材料介電特性，在本論文的後半部也搭配五苯環製作成有機薄膜電晶體並測量其電性。我們也發現這個新穎的奈米複合材料具有適合應用在有機薄膜電晶體絕緣層的潛力。首先由於介電常數的提升其臨界電壓也隨著降低，且在表面修飾的工程後，漏電流控制得當後，元件的電流開關比大幅的改善且其次臨界擺幅也由於介面缺陷減少而降低。此外由於五苯環的薄膜對有機薄膜電晶體的應用和沉積時的條件與絕緣層的特性有密切的關係，特別是絕緣層表面形貌會影響到五苯環的結構特性。由於有機薄膜電晶體是底閘極結構，載子傳輸路徑主要在五苯環和絕緣層介面間。我們發現奈米複合絕緣層有低表面能可以增加五苯環微結構初期結晶的緊密度，得到更好的覆蓋率，可以增加其載子移動率。而平整的絕緣層表面則可以降低載子在傳輸時產生的散射現象，並有效提升有機薄膜電晶體的電性。另外我們提出五苯環在奈米複合絕緣層上的成長機制，由於低表面能減少分子間的作用力，可以依據Volmer-Weber mode的成長模式形成緊密的島狀結構。高介電常數奈米複合絕緣層的有機薄膜電晶體元件得到不錯次臨界擺幅(0.50 V/dec.)，降低其臨界電壓(<-5 V)，改善電流開關比(~108)並得到不差的載子移動率(0.62 cm2V-1s-1)。

Organic thin-film transistors (OTFTs) can be competitive candidates for existing and novel TFT applications that require structural flexibility, low processing temperature, and low cost. Such applications include the switching devices of active matrix for flat panel displays based on liquid crystal pixels, organic light emitting diodes (OLEDs), or electronic papers. For low operation voltage and high driving current of organic thin-film transistors, this thesis describes the performance of OTFT devices with high-K nanocomposite was conducted as the gate dielectric. The surface modification of titanate dioxide (TiO2) nanoparticles and their application to high-quality, solution-processable polymer/ceramic dielectric nanocomposites reduced the leakage current density and significantly enhanced the dielectric constant. Phosphonic acid-based ligands were found to yield a high surface coverage and robust surface modification on the surface of TiO2 nanoparticles. The dielectric properties of the nanocomposites were examined by fabricating metal/insulator/metal capacitors. In our study, there are two methods were used to optimize the surface of high permittivity nanocomposites for maximum extractable energy, adding a surface-modified layer and chemical-mechanical polishing, to control the surface morphology of the nanocomposite dielectric and leakage current. On the other hand, the correlation of surface charactristics and leakage current will be disscused in this thesis. The dielectric properties of the nanocomposites with various nanoparticle volume fraction were fabricated by surface modifying engineering on the nanocomposite dielectric; a nanocomposite with a high dielectric constant and low leakage current (<10-10 A/cm2) were obtained to use as gate dielectric of OTFT.
The gate dielectric plays an important role in determining the characteristics of pentacene films. In the later half paragraph of this thesis, organic thin-film transistors were fabricated with pentacene and their electrical performance was also characterized. The nanocomposite materials presented in this study are potentially useful as dielectrics for gate insulators in OTFTs. Firstly, because of the increased dielectric constant, low leakage current and good interface after surface modifying engineering significantly improved the current on/off ratio, and reduce threshold voltage, subthreshold voltage and hysteresis effect. The characteristics of pentacene films for OTFT applications are closely related to the deposition parameters and gate dielectric properties, especially the morphology of dielectric and structural properties of pentacene films, including the roughness and the surface wetting properties of the gate dielectric. Due to the OTFTs with bottom gate structure, the path of carriers transport is the interface of pentacene and dielectric. A low surface energy significantly improved the crystalline microstructure of pentacene first layer with better coverage and enhanced the mobility of an OTFT. The low surface energy of the nnaocomposite gate dielectrics minimized the interaction between the pentacene and nanocomposite gate dielectric and lead to denser grain structures with three-dimensional islands which is followed the Volmer-Weber growth mode. And smooth gate dielectric OTFTs with high-dielectric-constant nanocomposites after surface treatment had a good sub-threshold voltage (0.50 V/dec.), low threshold voltage (<-5 V), a high on/off current ratio (~108), and good mobility (0.62 cm2V-1s-1).

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