本研究主要討論二氧化矽/砷化鎵薄膜系統(SiO2/GaAs Thin-Film)的奈米壓痕行為，以及退火前後機械性能、表面形貌和微觀結構的變化。本實驗使用射頻濺射機（RF Sputtering Deposition System）於砷化鎵基板上分別沉積200nm、300nm之二氧化矽薄膜，並在150nm和350nm深度處進行奈米壓痕實驗，以了解壓痕深度和膜厚的影響。同時，將另一組試片在500℃下加熱30分鐘，重複進行上述測量，並比較退火前後的差異。
實驗結果顯示，退火前的負載-深度曲線具有薄膜脫落基板（pop-in）之現象，退火後的負載-深度曲線則無此情形，且其硬度（Hardness）和楊氏模數（Young’s modulus）皆下降。退火前試片之壓痕深度為150nm時，發現膜厚300nm所量測之硬度與膜厚200nm相差有限，因此可以發現膜的厚度在硬度的影響有限。若觀察所有退火前試片表面形貌及剖面微觀結構，可以發現壓痕深度越大，表面變形量與差排密度越大，且膜厚較厚的試樣之殘留塑性變形（residual plastic deformation）較爲明顯，因此有較大之表面變形與差排密度；而退火後的試片，表面變形與差排密度皆較小。

The mechanical properties of SiO2/GaAs thin films with and without annealing indented in room temperatures to different depths were examined by using a nanoindentation test. The specimens were annealed at a temperature of 500℃ for 30 minutes. The results show that without annealing the pop-in effect appeared at the load-depth curve as the specimen indented at room temperature, due to the delamination of the thin film from the substrate. After annealing, the load-depth curve becomes smooth and the hardness and Young’s modulus were found to decrease. Furthermore, dislocations density was also found to decrease significantly. The changes in microstructure and mechanical properties were also discussed in terms of annealing, indentation depth, and thickness of the thin film.

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