本研究探討Ge摻雜對Sn1-xGexSe(0 ≤ x ≤ 0.7)奈米晶的合成及能隙的影響。於單一反應器系統在油胺溶劑中，230-260°C、5-24 小時下可合成出Sn1-xGexSe 奈米晶。Ge摻雜係使用三種不同的Ge前驅體如Ge、GeI4 和GeCl4來進行。結果顯示，相較於其他兩種Ge前驅體，來自於GeCl4之Ge較容易摻雜進入SnSe晶體。隨著Ge摻雜物的含量增加，要形成SnSe純相而無雜質在Sn1-xGexSe奈米晶中，需提高溫度或增加時間，此顯示出在單一反應器系統合成中，SnSe的生成速率較GeSe快，即使SnCl2 、GeCl4前驅物分別為固態和液態。Sn1-xGexSe 奈米晶隨著Ge的濃度( 0 ≤ x ≤ 0.7 )的增加，間接能隙從0.92 eV增加至1.17 eV 而直接能隙可由1.37 eV增加至1.53 eV。本研究顯示Sn1-xGexSe奈米晶在單一反應器系統油胺溶劑中可簡單地合成出而無需添加其他還原劑如hexamethyl-disilazane。除此之外，可調控能隙Sn1-xGexSe奈米晶為一個很有潛力的光伏材料。

The effects of Ge-doping on the synthesis and bandgap of Sn1-xGexSe nanocrystals with 0 ≤ x ≤ 0.7 were studied. Sn1-xGexSe nanocrystals were synthesized at 230-260°C for 5-24 h in the oleylamine (OLA) solvent in a one-pot system. Three different Ge precursors such as Ge, GeI4 and GeCl4 were used for Ge-doping. The result showed that the Ge dopant from the GeCl4 precursor can be more readily incorporated into the SnSe lattice as compared with the other two Ge precursors. The synthesis temperature and time required to form single SnSe phase without the impurities in the Sn1-xGexSe nanocrystals increased with the amount (x) of Ge dopant, revealing that during synthesis in the one-pot system the formation rate of SnSe is faster than that of GeSe even though the Sn precursor, SnCl2, is in the solid state and the Ge precursor, GeCl4, is in the liquid state. The indirect and direct bandgaps of Sn1-xGexSe nanocrystals could be tuned from 0.92 to 1.17 eV and from 1.37 to 1.53 eV, respectively, by increasing the Ge concentration (x) from 0 to 0.7. This study reveals that the Sn1-xGexSe nanocrystals can be simply synthesized in the OLA solvent in a one-pot system without introduction of other reduction agents such as hexamethyl-disilazane. In addition, the tunable band gap of Sn1-xGexSe nanocrystals may make them potential candidates as the photovoltaic materials.

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