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研究生：	許嘉麟 Hsu, Chia-Ling
論文名稱：	氧化鋅奈米線電晶體元件之製作與分析 Fabrication and Characterization of ZnO Nanowire Transistors
指導教授：	洪昭南 Hong, Chau-Nan Franklin
學位類別：	碩士 Master
系所名稱：	工學院 - 化學工程學系 Department of Chemical Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	117
外文關鍵詞：	Transistor, ZnO, Nanowire
相關次數：	點閱：40 下載：0
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Firstly, we grew ZnO nanowires via vapor transport method with the high-temperature furnace, and highly uniform and densely packed ZnO nanowire arrays were obtained. A series of material measurements have been conducted from the aspects of morphological, structural, optical, and chemical properties. According to TEM and XRD analyses, the obtained ZnO nanowires grew along the direction of (c-axis) without obvious defects and belonged to hexagonal wurtzite structure with lattice parameters of a＝0.325 nm and c＝0.521 nm. In optical analyses, PL and CL, indicated that the band gap of as-grown nanowires is about 3.27 eV and helped us to realize the surface states which were originated from oxygen vacancies. Raman spectra reveal the crystallinity of nanowires, while ESCA and EDS analyses confirm the chemical compositions. Besides the material characterizations, we also discussed the influence of zinc evaporated volume on the growth conditions toward nanowire properties. The synthesized ZnO nanowire arrays were also used to prepare super-hydrophobic surface, and the importance of the micro-nano binary structure has been illustrated.

In the second part, we demonstrated a methodology to arrange and transfer vertically aligned nanowires from the growth substrate to acceptor target via contact printing process. We successfully obtained oriented assembly of nanowires with the uses of PMMA and PDMS films by the roller machine. Through applying the demonstrated nanowire arrangement method, we fabricated multiple ZnO nanowire transistors with excellent electrical performances. Through calculations for the electrical properties, the values of threshold voltage, carrier concentration, transconductance, mobility, subthreshold swing, and on/off ratio are 2.07 V, 1.64 × 1016 cm－3, 1.70 × 10－7 S, 7.39 × 101 cm2V－1s－1, 330 mV/decade, and 1 × 106, respectively. We also fabricated transistors with anomalous electrical properties by using the nanowires grown in different batch. To investigate the origin of this difference, we correlated material characterizations with electrical properties. Finally, we found an underlying failure that might present in the device fabrication process.

In the final section, we developed a novel method to fabricate nanowire transistors by combining the working principles of DEP and imprinting pattering. We successfully arranged nanowires to cross between the etched source-drain electrodes mold, and used the interdigitated mold to fabricate PMMA patterns with great conformity. However, the DEP step for the nanowire alignment would impose a problem in the subsequent imprinting process. Though the concrete transistor has not been demonstrated yet, we proposed the main process challenge that might be met in following parameter adjustments.

English Abstract..........................................I
Acknowledgements........................................III
Table of Contents.........................................V
List of Tables.........................................VIII
List of Figures..........................................IX

Chapter 1 General Introduction............................1
1-1 Preface...............................................1
1-2 Nanotechnology........................................3
1-2-1 Nanoelectronics.....................................3
1-2-2 Moore’s Law	........................................4
1-3 Nanomaterials.........................................5
1-3-1 Top-down and Bottom-up..............................5
1-3-2 Nanowires...........................................6
1-4 Research Motivation...................................7
Chapter 2 Review and Theoretical Background..............11
2-1 Properties and Applications of ZnO Nanowires.........11
2-1-1 Material Introduction of ZnO.......................11
2-1-2 UV Laser and Light-emitting Diode..................12
2-1-3 Gas Sensor.........................................12
2-1-4 Field Effect Transistor............................13
2-1-5 Super-hydrophobic Surface..........................13
2-2 Syntheses of 1-Dimensional ZnO Nanostructures........15
2-3 Arrangements of Nanowires............................16
2-3-1 Growth and Postalignment...........................16
2-3-2 Coupled Growth and Alignment.......................19
2-4 Electrical Characteristics of NW Field Effect Transistor...............................................21
2-4-1 Theories and Mathematic Calculations of NW-FET.....21
2-4-1-1 2-terminal Characteristics.......................21
2-4-1-2 3-terminal Characteristics.......................21
2-4-2 Correlations between Material and Electrical Properties...............................................23
2-4-3 Electrical Improvements for ZnO NW-FETs............25
Chapter 3 Experimental Section...........................43
3-1 Experimental Flow Chart..............................43
3-2 Experimental Equipments..............................44
3-2-1 Nanowires Growth Systems...........................44
3-2-1-1 Furnace..........................................44
3-2-1-2 Vacuum System....................................44
3-2-1-3 Pressure Control System..........................44
3-2-1-4 Gas Flow Control.................................44
3-2-2 Photolithography and Metallization Processes.......44
3-2-2-1 Single-side Mask Aligner.........................45
3-2-2-2 E-beam Evaporator................................45
3-2-2-3 Reactive Ion Etch (RIE)..........................45
3-2-3 Printing Machine...................................46
3-2-3-1 Roller...........................................46
3-2-3-2 Imprinter........................................46
3-2-4 Glove Box with Gas Purification System.............46
3-3 Experimental Materials...............................47
3-3-1 Substrates.........................................47
3-3-2 Metal Materials....................................47
3-3-3 Organic Materials..................................47
3-3-4 Gas Materials......................................48
3-3-5 Cleaning Solvents..................................48
3-4 Experiment Procedures................................49
3-4-1 Synthesis of Vertically Aligned Nanowires..........49
3-4-1-1 Substrate Clean..................................49
3-4-1-2 Growth Procedures................................49
3-4-2 Preparation for Super-hydrophobic Surfaces.........49
3-4-3 Arrangement of Nanowires...........................50
3-4-3-1 Transfer with PMMA by Roller.....................50
3-4-3-2 Transfer with PDMS by Roller.....................50
3-4-4 Fabrication of Multiple ZnO Nanowire Transistors...50
3-4-4-1 Substrate Clean and Nanowire Transfer............50
3-4-4-2 Source and Drain Electrodes......................51
3-4-4-3 Gate Electrodes..................................51
3-4-5 Combination of DEP and Imprinting..................51
3-5 Analysis Equipments..................................53
3-5-1 Morphological and Structural Characterizations.....53
3-5-1-1 Scanning Electron Microscopy (SEM)...............53
3-5-1-2 Transmission Electron Microscopy (TEM)...........53
3-5-1-3 X-ray Diffraction (XRD)..........................54
3-5-2 Optical Characterizations..........................54
3-5-2-1 Photoluminescence (PL)...........................54
3-5-2-2 Cathodoluminescence (CL).........................55
3-5-3 Composition Characterizations......................55
3-5-3-1 Micro-Raman......................................55
3-5-3-2 Electron Spectroscopy for Chemical Analysis......56
3-5-3-3 Energy Dispersive X-ray Spectroscopy (EDS).......56
3-5-4 Electrical Transport Characterizations.............56
Chapter 4 Results and Discussion.........................65
4-1 Vertically Aligned ZnO Nanowires.....................65
4-1-1 Morphological and Structural Properties............65
4-1-2 Optical Properties.................................67
4-1-3 Chemical Composition...............................68
4-1-4 Influence of Zinc Evaporated Volume................69
4-2 Super-hydrophobic Surfaces...........................71
4-3 Nanowire Arrangements................................72
4-3-1 Transfer with PMMA by Roller.......................72
4-3-2 Transfer with PDMS by Roller.......................73
4-4 Multiple ZnO Nanowire Transistors....................75
4-4-1 Electrical Transport Characterizations.............75
4-4-2 Material Analyses and Electrical Correlations......77
4-5 Novel Fabrication Process for Nanowire Transistor....81
Chapter 5 Conclusions...................................107
Chapter 6 References....................................110
Curriculum Vitae........................................117
                                    

[1] J. Gribbin and M. Gribbin, Richard Feynman: A Life in Science, Dutton: Penguin Books, 1997
[2] M. Despont, J. Brugger, U. Drechsler, U. Du¨rig, W. Ha¨berle, M. Lutwyche, H. Rothuizen, R. Stutz, R. Widmer, G. Binnig, H. Rohrer, and P. Vettiger, Sensors and Actuators 80, 100-107 (2000)
[3] http://en.wikipedia.org/wiki/Image:Moores_law.svg
[4] http://en.wikipedia.org/wiki/Image:PPTMooresLawai.jpg
[5] Y. Yu, Z. H. Zhao, and Q. S. Zheng, Langmuir 23, 15 (2007)
[6] Y. Cui, Z. Zhong, D. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (2003)
[7] Y. Cui and C. M. Lieber, Science 251, 891 (2001)
[8] Y. Huang, X. Duan, Y. Cui, L. J. Lauhon, K. Kim, and C. M. Lieber, Science 294, 1313 (2001)
[9] R. S. Friedman, M. C. McAlpine, D. S. Ricketts, D. Ham, and C. M. Lieber, Nature 434, 1085 (2005)
[10] F. Patolsky and C. M. Lieber, Mater. Today 8, 20 (2005)
[11] D. P. Yu, X. S. Sun, C. S. Lee, I. Bello, S. T. Lee, H. D. Gu, K. M. Leung, G. W. Zhou, Z. F. Dong, and Z. Zhang, Appl. Phys. Lett. 72, 1966 (1998)
[12] X. F. Duan and C. M. Lieber, J. Am. Chem. Soc. 122, 188(2000)
[13] R. Q. Zhang, Y. Lifshitz, and S. T. Lee, Adv. Mater. 15, 635 (2003)
[14] W. Q. Han, S. S. Fan, Q. Q. Li, and Y. D. Hu, Science 277, 1287 (1997)
[15] C. R. Wang, K. B. Tang, Q. Yang, B. Hai, G. Z. Shen, C. H. An, W. C. Yu, and Y. T. Qian, Inorg. Chem. Commun. 4, 339 (2001)
[16] Y. Jiang, Y. Wu, X. Mo, W. C. Yu, Y. Xie, and Y. T. Qian, Inorg. Chem. 39, 2964 (2000)
[17] C. R. Wang, K. B. Tang, Q. Yang, and Y. T. Qian, J. Electrochem. Soc. 150, G163 (2003)
[18] M. Yazawa, M. Koguchi, A. Muto, M. Ozawa, and K. Hiruma, Appl. Phys. Lett. 61, 2051 (1992)
[19] N. Saito, H. Haneda, T. Sekiguchi, N. Ohashi, I. Sakaguchi, and K. Koumoto, Adv. Mater. 14, 418 (2002)
[20] J. Y. Lee, Y. S. Choi, J. H. Kim, M. O. Park, and S. Im, Thin Solid Films 403, 533 (2002)
[21] M. H. Huang, S. Mao, H. Feick, H. Q. Yan, Y. Y. Wu, H. Kind, E. Weber, R. Russo, and P. D. Yang, Science 292, 1897 (2001)
[22] H. Rensmo, K. Keis, H. Lindstroem, S. Soedergren, A. Solbrand, A. Hagfeldt, S. E. Lindquist, and L. N. Wang, M. Muhammed, J. Phys. Chem. B 101, 2598 (1997)
[23] Y. Lin, Z. Zhang, Z. Tang, F. Yuan, and J. Li, AdV. Mater. Opt. Electron. 9, 205 (1999)
[24] K. S. Weissenrieder and J. Mueller, Thin Solid Films 300, 30 (1997)
[25] M. H. Koch, P. Y. Timbrell, and R. N. Lamb, Semicond. Sci. Technol. 10, 1523 (1995)
[26] X. Q. Meng, D. Z. Shen, J. Y. Zhang, D. X. Zhao, Y. M. Lu, L. Dong, Z. Z. Zhang, Y. C. Liu, and X. W. Fan, Solid State Commun. 135, 179 (2005)
[27] Y. Q. Chen, J. Jiang, Z. Y. He, Y. Su, D. Cai, and L. Chen, Mater. Lett. 59, 3280 (2005)
[28] R. C. Wang, C. P. Liu, J. L. Huang, and S. J. Chen, Appl. Phys. Lett. 87, 053103 (2005)
[29] H. T. Ng, B. Chen, J. Li, J. Han, M. Meyyappan, J. Wu, S. X. Li, and E. E. Haller, Appl. Phys. Lett. 82, 2023 (2003)
[30] Z. Chen, N. Q. Wu, Z. W. Shan, M. H. Zhao, S. X. Li, C. B. Jiang, M. K. Chyu, and S. X. Mao, Scr. Mater. 52, 63 (2005)
[31] Q. Yang, K. Tang, J. Zuo, and Y. Qian, Appl. Phys. A 79, 1847 (2004)
[32] X. Liu, X. H. Wu, H. Cao, and R. P. H. Chang, J. Appl. Phys. 95, 3141 (2004)
[33] N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, Appl. Phys. Lett. 81, 622 (2002)
[34] T. Sekiguchi, S. Miyashita, K. Obara, T. Shishido, and N. Sakagami, J. Cryst. Growth 214, 72 (2000)
[35] Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005)
[36] M. H. Huang, S. Mao, H. Feick, H. Q. Yan, Y. Y. Wu, H. Kind, E. Weber, R. Russo, and P. D. Yang, Science 292, 1897 (2001)
[37] X. T. Zhang, Y. C. Liu, L. G. Zhang, J. Y. Zhang, Y. M. Lu, D. Z. Shen, W. Xu, G. Z. Zhong, X. W. Fgan, and X. G. Kong, J. Appl. Phys. 92, 3293 (2002)
[38] J. H. Choy, E. S. Jang, J. H. Won, J. H. Chung, D. J. Jang, and Y. W. Kim, Adv. Mater. 15, 1911 (2003)
[39] W. I. Park and G. C. Yi, Adv. Mater. 16, 87 (2004)
[40] T. Seiyama and A. Kato, Anal. Chem. 34, 1502 (1962)
[41] A. P. Chatterjee, P. Mitra, and A. K. Mukhopadhyay, J. Mater. Sci. 34, 4225 (1999)
[42] S. Basu and A. Dutta, Sensors Actuators B 22, 83 (1994)
[43] Q. Wan, Q. H. Li, Y. J. Chen, T. H. Wang, X. L. He, X. G. Gao, and J. P. Li, Appl. Phys. Lett. 84, 3085 (2004)
[44] Q. Wan, Q. H. Li, Y. J. Chen, T. H. Wang, X. L. He, and J. P. Li, Appl. Phys. Lett. 84, 3654 (2004)
[45] Q. H. Li, Q. Wan, Y. X. Liang, and T. H. Wang, Appl. Phys. Lett. 84, 4556 (2004)
[46] M. S. Arnold, P. Avouris, Z. W. Pan, and Z. L. Wang, J. Phys. Chem. B 107, 659 (2003)
[47] W. I. Park, G. C. Yi, M. H. Bae, and H. J. Lee, Appl. Phys. Lett. 85, 5052 (2004)
[48] C. Badre, T. Pauport´e, M. Turmine, and D. Lincot, Nanotechnology 18, 365705 (2007)
[49] X. Feng, L. Feng, M. Jin, J. Zhai, L. Jiang, and D. Zhu, J. Am. Chem. Soc. 126, 62-63 (2004)
[50] X. Q. Meng, D. X. Zhao, J. Y. Zhang, D. Z. Shen, Y. M. Lu, L. Dong, Z. Y. Xiao, Y. C. Liu, and X.W. Fan, Chem. Phys. Lett. 413, 450-453 (2005)
[51] A. B. D. Cassie, S. Baxter, Trans. Faraday Soc. 40, 546-551 (1944)
[52] D. P. Yu, X. S. Sun, C. S. Lee, I. Bello, S. T. Lee, H. D. Gu, K. M. Leung, G. W. Zhou, Z. F. Dong, and Z. Zhang, Appl. Phys. Lett. 72, 1966 (1998)
[53] X. F. Duan and C. M. Lieber, J. Am. Chem. Soc. 122, 188 (2000)
[54] R. Q. Zhang, Y. Lifshitz, and S. T. Lee, Adv. Mater. 15, 635 (2003)
[55] W. Q. Han, S. S. Fan, Q. Q. Li, and Y. D. Hu, Science 277, 1287 (1997)
[56] C. R. Wang, K. B. Tang, Q. Yang, B. Hai, G. Z. Shen, C. H. An, W. C. Yu, and Y. T. Qian, Inorg. Chem. Commun. 4, 339 (2001)
[57] Y. Jiang, Y. Wu, X. Mo, W. C. Yu, Y. Xie, and Y. T. Qian, Inorg. Chem. 39, 2964 (2000)
[58] C. R. Wang, K. B. Tang, Q. Yang, and Y. T. Qian, J. Electrochem. Soc. 150, G163 (2003)
[59] M. Yazawa, M. Koguchi, A. Muto, M. Ozawa, and K. Hiruma, Appl. Phys. Lett. 61, 2051(1992)
[60] R. S. Wagner, Whisker Technology, New York: Wiley-Interscience, 1970
[61] Y. Zhang, N. Wang, S. Gao, R. He, S. Miao, J. Liu, J. Zhu J, and X. Zhang, Chem. Mater. 14, 3564 (2002)
[62] B. D. Yao, Y. F. Chan, and N. Wang, Appl. Phys. Lett. 81, 757 (2002)
[63] Y. C. Kong, D. P. Yu, B. Zhang, W. Fang, and S. Q. Feng, Appl. Phys. Lett. 78, 407 (2001)
[64] M. H. Huang,Y. Y. Wu, H. Feick, N. Tran, E. Weber, and P. D. Yang, Adv. Mater. 13, 113 (2001)
[65] Y. W. Wang, L. D. Zhang, G. Z. Wang, X. S. Peng, Z. Q. Chu, and C. H. Liang, J. Cryst. Growth 234, 171 (2002)
[66] P. D. Yang, H. Q. Yan, S. Mao, R. Russo, J. Johnson, R. Saykally, N. Morris, J. Pham, R. R. He, and H. J. Choi, Adv. Funct. Mater. 12, 323 (2002)
[67] S. Y. Li, C. Y. Lee, and T. Y. Tseng, J. Cryst. Growth 247, 357 (2003)
[68] Y. Ding, P. X. Gao, and Z. L. Wang, J. Am. Chem. Soc. 126, 2066 (2004)
[69] F. Heinrichsdorff, M. H. Mao, N. Kirstaedter, A. Krost, D. Bimberg, A. O. Kosogov, and P. Werner, Appl. Phys. Lett. 71, 22 (1997)
[70] Z. Zhu, Phys. Status Solidi b 202, 827 (1997)
[71] P. Souletie and B. W. Wessels, J. Mater. Res. 3, 740 (1988)
[72] W. I. Park, G. C. Yi, and H. M. Jang, Appl. Phys. Lett. 79, 2022 (2001)
[73] W. I. Park, S. J. An, G. C. Yi, and H. M. Jang, J. Mater. Res. 16, 1358 (2001)
[74] W. I. Park, D. H. Kim, S. W. Jung, and G. C. Yi, Appl. Phys. Lett. 80, 4232 (2002)
[75] W. I. Park, G. C. Yi, M. Y. Kim, and S. J. Pennycook, Adv. Mater. 14, 1841 (2002)
[76] J. H. Choy, E. S. Jang, J. H. Won, J. H. Chung, D. J. Jang, and Y. W. Kim, Appl. Phys. Lett. 84, 287 (2004)
[77] Z. Q. Li, Y. J. Xiong, and Y. Xie, Inorg. Chem. 42, 8105 (2003)
[78] J. M. Wang and L. Gao, J. Mater. Chem. 13, 2551 (2003)
[79] B. Liu and H. C. Zeng, J. Am. Chem. Soc. 125, 4430 (2003)
[80] Z. Q. Li, Y. Xie, Y. J. Xiong, R. Zhang, and W. He, Chem. Lett. 32, 760 (2003)
[81] Z. R. R. Tian, J. A. Voigt, J. Liu, B. Mckenzie, and M. J. Mcdermott, J. Am. Chem. Soc. 124, 12954 (2003)
[82] L. Vayssieres, Adv. Mater. 15, 464 (2003)
[83] Yugang Zhang, Fang Lu, Zhenyang Wang, and Lide Zhang, J. Phys. Chem. C, 111, 4519 (2007)
[84] Z. Chen, Y. Yang, F. Chen, Q. Qing, Z. Wu, and Z. Liu, J. Phys. Chem. B 109, 11420 (2005)
[85] S. Kumar, S. Rajaraman, R. A. Gerhardt, Z. L. Wang, and P. J. Hesketh, Electrochim. Acta 51, 943 (2005)
[86] X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber, Nature 409, 6 (2001)
[87] S. Y. Lee, T. H. Kim, D. I. Suh, N. K. Cho, H. K. Seong, S. W. Jung, H. J. Choi, and S. K. Lee, Chem. Phys. Lett. 427,107 (2006)
[88] T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, Nanotechnology 17, 3394 (2006)
[89] L. Shang, T. L. Clare, M. A. Eriksson, M. S. Marcus, K. M. Metz, and R. J. Hamers, Nanotechnology 16, 2846 (2005)
[90] C. S. Lao, J. Liu, P. Gao, L. Zhang, D. Davidovic, R. Tummala, and Z. L. Wang, Nano Lett. 6, 263 (2006)
[91] D. Q. Wang, R. Zhu, Z. Y. Zhou, and X. Y. Ye, Appl. Phys. Lett. 90, 103110 (2007)
[92] S. Y. Lee, A. Umar, D. I. Suh, J. E. Park, Y. B. Hahn, J. Y. Ahn, and S. K. Lee, Physica E 40, 866-872 (2008)
[93] D. I. Suh, S. Y. Lee, J. H. Hyung, T. H. Kim, and S. K. Lee, J. Phys. Chem. C 112, 1276-1281 (2008)
[94] C. S. Lao, J. Liu, P. X. Gao, L. Y. Zhang, D. Davidovic, R. Tummala, and Z. L. Wang, Nano Lett. 6, 263-266 (2006)
[95] D. Whang, S. Jin, Y. Wu, and C. M. Lieber, Nano Lett. 3, 1255-1259 (2003)
[96] Y. Huang, X. F. Duan, Q. Q. Wei, and C. M. Lieber, Science 291, 630-633 (2001)
[97] G. H. Yu, A. Y. Cao, and C. M. Lieber, Nanotechnology 2, 372-377 (2007)
[98] A. Javey, S. W. Nam, R. S. Friedman, H. Yan, and C. M. Lieber, Nano Lett. 7, 773-777 (2007)
[99] R. Yerushalmi, Z. A. Jacobson, J. C. Ho, Z. Y. Fan, and A. Javey, Appl. Phys. Lett. 91, 203104 (2007)
[100] Z. Y. Fan, J. C. Ho, Z. A. Jacobson, R. Yerushalmi, R. L. Alley, H. Razavi, and A. Javey, Nano Lett. 8, 20-25 (2008)
[101] J. H. Ahn, H. S. Kim, K. J. Lee, S. W. Jeon, S. J. Kang, Y. G. Sun, R. G. Nuzzo, and J. A. Rogers, Science 314, 1754-1757
[102] Y. G. Zhang, F. Lu, Z. Y. Wang, and L. D. Zhang, J. Phys. Chem. C 111, 4519-4523 (2007)
[103] M. J. Zheng, L. D. Zhang, G. H. Li, and W. Z. Shen, Chem. Phys Lett. 363, 123 (2002)
[104] L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Johnson, Y. F. Zhang, R. J. Saykally, and P. D. Yang, Angew. Chem., Int. Ed. 42, 3031 (2003)
[105] L. Vayssieres, Adv. Mater. 15, 464 (2003)
[106] M. Lorenz, E. M. Kaidashev, A. Rahm, Th. Nobis, J. Lenzner, G. Wagner, D. Spemann, H. Hochmuth, and M. Grundmann, Appl. Phys. Lett. 86, 143113 (2005)
[107] Y. T. Jang, B. K. Ju, and Y. H. Lee, Appl. Phys. Lett. 86, 173103 (2005)
[108] Y. G. Zhang, A. L. Chang, J. Cao, Q. Wang, W. Kim, Y. M. Li, N. Morris, E. Yenilmez, J. Kong, and H. Dai, Appl. Phys. Lett. 79, 3155-3157 (2001)
[109] N. R. Franklin, Q. Wang, T. W. Tombler, A. Javey, M. S. Shim, and H. Dai, Appl. Phys. Lett. 81, 913-915 (2002)
[110] A. Ural, Y. M. Li, and H. Dai, Appl. Phys. Lett. 81, 3464-3466 (2002)
[111] S. Sharma, T. I. Kamins, R. S. Williams, and M. S. Islam, Nanotechnology 15, L5-L8 (2004)
[112] A. S. Paulo, N. Arellano, J. A. Plaza, R. He, C. Carraro, R. Maboudian, R. T. Howe, J. Bokor, and P. D. Yang, Nano Lett. 7, 1100-1104 (2007)
[113] J. F. Conley Jr., L. Stecker, and Y. Ono, Appl. Phys. Lett. 87, 223114 (2005)
[114] Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005)
[115] D. A. Neamen, Semiconductor Physics and Devices: Basic Principles, New York: McGraw-Hill, 2003
[116] O. Hayden, M. T. Bjcrk, H. Schmid, H. Riel, U. Drechsler, S. F. Karg, E. Lcrtscher, and W. Riess, small 2, 230-234 (2007)
[117] W. K. Hong, D. K. Hwang, I. K. Park, G. Jo, S. H. Song, S. J. Park, and T. H. Lee, Appl. Phys. Lett. 90, 243103 (2007)
[118] F. M. Hossain, J. Nishii, S. Takagi, A. Ohotomo, T. Fukumura, H. Fujioka, H. Ohno, H. Koinuma, and M. Kawasaki, J. Appl. Phys. 94, 7768 (2003)
[119] N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C. H. Park, and D. A. Keszler, J. Appl. Phys. 97, 064505 (2005)
[120] W. K. Hong, J. I. Sohn, D. K. Hwang, S. S. Kwon, G. H. Jo, S. H. Song, S. M. Kim, H. J. Ko, S. J. Park, M. E. Welland, and T. H. Lee, Nano Lett. 8, 950-956 (2008)
[121] A. Motayed, M. Vaudin, A. V. Davydov, J. Melngailis, M. He, and S. N. Mohammad, Appl. Phys. Lett. 90, 043104 (2007)
[122] S. H. Ju, K. H. Lee, M. H. Yoon, A. Facchetti, T. J. Marks, and D. B. Janes, Nanotechnology 18, 155201 (2007)
[123] A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature 424, 654 (2003)
[124] K. H. Keem, J. M. Kang, C. J. Yoon, D. Y. Jeong, B. M. Moon, and S. S. Kim, Jpn. J. Appl. Phys. 46, 6230-6232 (2007)
[125] M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, Adv. Mater. 13, 113 (2001)
[126] J. Wu, H. I. Wen, C. H. Tseng, and S. C. Liu, Adv. Funct. Mater. 14, 806 (2004)
[127] T. H. Moon, M. C. Jeong, B. Y. Oh, M. H. Ham, M. H. Jeun, W. Y. Lee, and J. M. Myoung, Nanotechnology 17, 2116-2121 (2006)
[128] J. M. Kang, K. H. Keem, D. Y. Jeong, and S. S. Kim, Jpn. J. Appl. Phys. 46, 6227-6229 (2007)
[129] P. C. Chang, Z. Y. Fan, C. J. Chien, D. Stichtenoth, C. Ronning, and J. G. Lu, Appl. Phys. Lett. 89, 133113 (2006)
[130] S. H. Ju, K. H. Lee, and D. B. Janes, Nano Lett. 5, 2281-2286 (2005)
[131] W. I. Park, J. S. Kim, and G. C. Yi, Appl. Phys. Lett. 85, 5052 (2004)
[132] W. K. Hong, B. J. Kim, T. W. Kim, G. H. Jo, S. H. Song, S. S. Kwon, A. S. Yoon, E. A. Stach, and T. H. Lee, Colloids and Surfaces A: Physicochem. Eng. Aspects 313-314, 378-382 (2008)
[133] A. Umar, Y. H. Im, and Y. B. Hahn, J. Electron. Mater. 35, 758 (2006)
[134] C. Li, Q. Fu, F. H. Su, G. H. Li, X. G. Wu, X. Z. Zhao, and Q. J. Fang, J. Cryst. Growth 292, 19-25 (2006)
[135] K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996)
[136] J. Q. Hu, Q. Li, X. M. Meng, C. S. Lee, and S. T. Lee, Chem. Mater. 15, 305 (2003)
[137] Y. M. Oh, K. M. Lee, K. H. Park, Y. S. Kim, Y. H. Ahn, S. I. Lee, and J. Y. Park, Nano Lett. 7, 3681-3685 (2007)
[138] C. A. Arguelo, D. L. Rousseau, and S. P. S. Porto, Phys. Rev. 181, 1351 (1969)
[139] J. M. Calleja and M. Cardona, Phys. Rev. B 16, 3753 (1977)
[140] F. Decremps, J. Pellicer-Porres, A. M. Saitta, J. C. Chervin, and A. Polian, Phys. Rev. B 65, 092101 (2002)
[141] M. Rajalakshmi, A. K. Arora, B. S. Bendre, and S. Mahamuni, J. Appl. Phys. 87, 2445 (2000)
[142] M. Tzolov, N. Tzenov, D. Dimova-Malinovska, C. Pizzuto, G. Vitali, G. Zollo, and I. Ivanov, Thin Solid Films 379, 28 (2000)
[143] G. J. Exarhos, A. Rose, and C. F. Windish Jr., Thin Solid Films 308-309, 56 (1997)

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