簡易檢索 / 詳目顯示

回結果列表
研究生： 姚齊
Yao, Chi
論文名稱： 13.56 MHz射頻功率電源供應器之研製
Design and Implementation of 13.56 MHz RF Power Generator
指導教授： 李嘉猷
Lee, Jia-You
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2016
畢業學年度： 104
語文別： 中文
論文頁數： 76
中文關鍵詞： 射頻功率電源供應器 、E類轉換器 、13.56 MHz
外文關鍵詞： RF power generator, Class E converter, 13.56 MHz
相關次數： 點閱：66  下載：18 
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報

    • 本論文旨在針對醫療、工業和軍事所需射頻功率電源，研製頻率 13.56 MHz之高功率、高效率正弦電源供應器。為使電路具高效率一般採用切換式轉換器，但切換式轉換器於工作頻率MHz以上時，一般開關與驅動元件將無法使用，且隨著頻率提升，功率開關將會產生極大的切換損失，導致電路效率嚴重下降。文中分析各種射頻電源供應器電路架構並比較其優缺點，為減少高頻時開關元件切換損失且具高電路效率，經電路分析與特性探討後本文選擇使用E類轉換器。為減少電路電壓駐波比以降低反射功率的產生，針對電路負載進行匹配分析與設計。為有效探究高頻時元件驅動與電路之特性，本文先試製50 kHz、1 MHz電源供應器。最後研製13.56 MHz射頻電源供應器，經實驗量測結果，電路最大輸出功率為700 W，效率可達70%以上，而輸出功率50至60 W時可得最佳效率87%。

    The aim of this thesis is RF power generator with high power and high efficiency for medical, industrial and military applications. Though switching converters are generally adopted for high transfer efficiency, power switch operated at frequency higher than 1 MHz contributes to serious switching loss. The advantages and disadvantages of various circuit structures of RF power generator were analyzed and compared. In order to reduce switching loss with high operating frequency and maintain efficiency, Class E converter is chosen base on the analysis of characteristics. To reduce VSWR for decreasing reflected power, analysis and design of matching are carried out for load of circuit. In order to investigate feature of components and circuits in high frequency, two kinds of power generator with different frequency which are 50 kHz, 1 MHz were implemented. Finally, a RF power generator with 13.56 MHz is implemented. Consequently, according to experimental results, the efficiency is above 70% at maximum output power of 700 W with 13.56-MHz operating frequency, and the maximum efficiency is 87% with 50- to 60-W output power

    中文摘要 I 英文摘要 II 英文延伸摘要 III 誌謝 VI 目錄 VII 表目錄 X 圖目錄 XI 第一章 緒論 1 1-1 研究動機 1 1-2 研究背景 2 1-3 研究方法 6 1-4 論文大綱 7 第二章 電源供應器架構 8 2-1 前言 8 2-2 線性式轉換器 8 2-3 切換式轉換器 9 2-4 諧振式轉換器 10 2-4-1 電壓源串聯諧振轉換器 11 2-4-2 E類諧振式轉換器 12 第三章 E類轉換器電路架構分析 15 3-1 前言 15 3-2 E類轉換器模式分析 15 3-3 E類轉換器開關電壓電流波形分析 19 3-3-1 E類轉換器元件電流和電壓應力分析 21 3-3-2 串聯諧振電路阻抗推導 22 3-3-3 諧振槽元件計算 24 3-3-4 扼流電感分析設計 25 3-4 電路品質因數 25 3-5 阻抗轉換電路分析 27 3-5-1 π1a型阻抗轉換電路 28 3-5-2 π1b型阻抗轉換電路 31 第四章 硬體電路設計 35 4-1 前言 35 4-2 E類轉換器電路設計 36 4-2-1 串聯諧振負載阻抗計算 36 4-2-2 諧振槽元件計算 37 4-2-3 諧振電感繞製 38 4-2-4 扼流電感設計與製作 38 4-2-5 開關和電路元件應力計算 40 4-3 阻抗轉換電路設計 41 4-4 開關驅動電路製作 43 4-4-1 50 kHz開關驅動電路 43 4-4-2 1 MHz與13.56 MHz開關驅動電路 44 4-5 射頻電源供應器設計流程 46 第五章 電路模擬與實驗結果 52 5-1 前言 52 5-2 電路規格與硬體電路 53 5-3 Simplis電路模擬 54 5-3-1 50 kHz E類轉換器電路模擬 54 5-3-2 1 MHz E類轉換器電路模擬 55 5-3-3 13.56 MHz E類轉換器電路模擬 56 5-4 實驗波形測量 58 5-4-1 50 kHz電源供應器實驗波形 58 5-4-2 1 MHz電源供應器實驗波形 61 5-4-3 13.56 MHz電源供應器實驗波形 64 第六章 結論與未來研究方向 67 6-1 結論 67 6-2 未來研究方向 68 參考文獻 69

    [1]S. H. L. Tu and C. Toumazou, “ Low-distortion CMOS complementary class E RF tuned power amplifiers,” IEEE Trans. Circuits Syst. I., vol. 47, no. 8, pp. 774-779, May 2000.
    [2]T. Lopez, G. Sauerlaender, T. Duerbaum, and T. Tolle, “A detailed analysis of a resonant gate driver for PWM applications,” in Proc. IEEE APEC’03, 2003, Miami Beach, pp. 873-878.
    [3]B. Kim, S. Uno, and K. Nakazato, “13.56 MHz-RFID biosensor with on-chip spiral inductor,” in Proc. IEEE ESciNano, 2010, Kuala Lumpur, pp. 1-2.
    [4]Mohand, Undeland, and Robbins, “Power Electronics Converters, Applications and Design,” 2006.
    [5]H. Hu, Y. Li, and Z. Wang, “An improved push pull class-E RF tuned power amplifier with low maximum transistor current,” in Proc. IEEE ASIC, 2001, Shanghai, pp. 322-325.
    [6]B. Mindan and L. Hong, “The analysis of impedance matching problem in RF circuit design,” in Proc. IEEE IFITA, 2010, Kunming, pp. 350-353.
    [7]H. L. N. Wiegman, “A resonant pulse gate drive for high frequency applications,” in Proc. IEEE APEC’92, 1992, Boston, pp. 738-743.
    [8]S. H. Abdelhalem, P. S. Gudem, and L. E. Larson, “An RF–DC converter with wide-dynamic-range input matching for power recovery applications,” IEEE Trans. Circuits Syst. II, Exp. Briefs., vol. 60, no. 6, pp. 336-340, Jun. 2013.
    [9]H. M. Nemati, C. Fager, U. Gustavsson, R. Jos, and H. Zirath, “Design of varactor-based tunable matching networks for dynamic load modulation of high power amplifiers,” IEEE Trans. Microw. Theory Techn., vol. 57, no. 5, pp. 1110-1118, May 2009.
    [10]K. Bera, S. Kuhn, C. A. Chen, and P. Vitello, “Plasma impedance in a narrow gap capacitively coupled RF discharge,” IEEE Trans. Plasma Sci., vol. 30, no. 1, pp. 144-145, Feb. 2002.
    [11]R. P. Eguiluz, J. A. P. Martínez, R. L. Callejas, A. M. Cabrera, J. S. Pacheco, B. A. Uscanga, A. E. M. Castro, R. V. Alvarado, S. R. B. Delgado, B. G. R. Méndez, and A. P. Beneitez, “Analysis and application of a parallel e-class amplifier as RF plasma source,” IEEE Trans. Plasma Sci., vol. 38, no. 10, pp. 2840-2847, Oct. 2010.
    [12]“Plasma Excitation by TRUMPF Hüttinger,” TRUMPF Hüttinger Co., Germany. [Online]. Available: http://www.trumpf-huettinger.com/en/pro ducts/plasma-excitation.html, 2016.
    [13]Z. Chen, “Impedance matching for one atmosphere uniform glow discharge plasma (OAUGDP) reactors,” IEEE Trans. Plasma Sci., vol. 30, no. 5, pp. 1922-1930, Oct. 2002.
    [14]M. D. Jongh and A.V. Bezooijen., “Dynamic impedance matching network and method for matching an impedance between a source and a load,” U. S. Patent 8542078, Sep. 24, 2013.
    [15]“Application note- RF impedance matching,” Huttinger, ermany. [Online]. Available: https://chasqueweb.ufrgs.br/~ckrug/pvd/rf-1.pdf, 2016.
    [16]F. Mustafa, N. Parimon, A. M. Hashim, S. F. A. Rahman, A. R. A. Rahman, and M. N. Osman, “Design, fabrication and characterization of a schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection,” Journal of ScienceDirect Elsevier Ltd., vol. 47, no. 2, pp. 274-287, Feb. 2010.
    [17]Y. F. Yee and C. K. Chakrabarty, “Phase detection using AD8302 evaluation board in the superheterodyne microwave interferometer for line average plasma electron density measurements,” Journal of ScienceDirect Elsevier Ltd., vol. 40, no. 9, pp. 849-853, Feb. 2007.
    [18]X. Wei, H. Sekiya, S. Kuroiwa, T. Suetsugu, and M. K. Kazimierczuk, “Effect of mosfer gate-to drain parasitic capacitance on class-E power amplifier,” in Proc. IEEE ISCAS, 2010, Paris, pp. 3200-3203.
    [19]A. A. Fayed, “Efficient powering of RF Pas using dc-dc power supplies,” in Proc. IEEE CSICS, 2013, Monterey, pp. 1-4.
    [20]任耿良，應用於射頻電漿電源E類轉換器之研製，國立成功大學電機工程學系碩士論文，2013年。
    [21]賴翰穎，應用於3 kW射頻電漿電源E類換流器之研製，國立成功大學電機工程學系碩士論文，2016年。
    [22]李志勇，應用於電漿負載之電源供應器研製實現，國立成功大學電機工程學系論文，2007年。
    [23]A. Eroglu, “Phase controlled class E Amplifier Characteristics for pulsing applications,” IEEE Trans. Plasma Sci., vol. 42, no. 10, pp. 3299-3308, Oct. 2014.
    [24]A. Eroglu, “High power transmission line transformer design for plasma generators,” IEEE Trans. Plasma Sci., vol. 42, no. 4, pp. 969-975, Apr. 2014.
    [25]A. Eroglu and H. Kirkici, “Investigation of RF generator response to plasma instabilities,” in Proc. IEEE ICOPS, 2014, Washington, p. 1.
    [26]W. Cai, Z. Zhang, X. Ren, and Y. F. Liu, “A 30 MHz isolated puss-pull VHF resonant converter,” in Proc. IEEE APEC, 2014, Fort Worth, pp. 1456-1460.
    [27]M. Hayati, A. Lotfi, M. K. Kazimierczuk, and H. Sekiya, “Performance study of class-E power amplifier with a shunt inductor at subnominal condition,” IEEE Trans. Power Electron., vol. 28, no. 8, pp. 3834-3844, Aug. 2013.
    [28]M. Hayati, A. Lotfi, M. K. Kazimierczuk, and H. Sekiya, “Analysis and design of class-E power amplifier with mosfet parasitic linear and nonlinear capacitances at any duty ratio,” IEEE Trans. Power Electron., vol. 28, no. 11, pp. 5222-5232, Nov. 2013.
    [29]X. Wei, T. Nagashima, M. K. Kazimierczuk, H. Sekiya, and T. Suetsugu, “Analysis and design of class-EM power amplifier,” IEEE Trans. Circuits Syst. I, Reg. Papers., vol. 61, no. 4, pp. 976-986, Apr. 2014.
    [30]M. Hayati, A. Lotfi, M. K. Kazimierczuk, and H. Sekiya, “Genralized design considerations and analysis of class-E amplifier for sinusoidal and square input voltage waveforms,” IEEE Trans. Ind. Electron., vol. 62, no. 1,pp.211-220, Jan. 2015.
    [31]D. J. Coumou, D. H. Clark, T. Kummerer, M. Hopkins, D. Sullivan, and S. Shannon, “Ion energy distribution skew control using phase-locked harmonic RF bias drive,” IEEE Trans. Plasma Sci., vol. 42, no. 7, pp. 1880-1893, Jul. 2014.
    [32]D. J. Coumou, “Coherent feedforward impedance correction and feedback power regulation in a plasma processing RF power delivery system,” in Proc. IEEE COMPEL, 2013, Salt Lake City, pp.1-4.
    [33]S. H. Kim, M. Ehsani, Y. H. Kim, and C. H. Choi, “Design and impedance of plasma reactor for pulsed power system,” IEEE Trans. Dielectr. Electr. Insul., vol. 20, no. 4, pp. 1117-1122, Aug. 2013.
    [34]“Navigator and Navigator II digital matching network,” Advanced Energy Industries, Inc., U. S. A. [Online]. Available: http://www. advanced-energy.com/en/Matching_Networks.html, 2016.
    [35]“MWD-25LD, 13.56MHz, 2.5kW impedance matching network,” MKS Instruments, Inc., U. S. A. [Online]. Available: http://www.mksinst. com/product/Product.aspx?ProductID=323, 2016.
    [36]“RF generators macro results for micro processes,” TRUMPF Hüttinger Co., Germany. [Online]. Available: http://www.trumpf-huettinger.com/ en/products/plasma-excitation/truplasma-rf.html, 2016.
    [37]“RGA-50, 60 MHz, 5kW RF generator,” DAIHEN Co., Jaoan. [Online]. Available: http://www.daihen-ac.com/products/lists/3, 2016.
    [38]吳信宏，改良式動態調控機制於電漿設備用阻抗匹配之研究，國立成功大學電機工程學系碩士論文，2015年。
    [39]杜育姍，新型射頻功率阻抗匹配狀態偵測電路於電漿設備用阻抗匹配器之研究，國立成功大學電機工程學系碩士論文，2015年。
    [40]劉彥田，非接觸式射頻電能傳輸技術於植入式神經電刺激器之研究，國立成功大學電機工程學系碩士論文，2010年。
    [41]沈鳳麒，具非接觸式供電監控單元之植入型功能電刺激器，國立成功大學電機工程學系碩士論文，2014年。
    [42]張笠筠，植入式骨釘之非接觸電刺激裝置，國立成功大學電機工程學系碩士論文，2015年。
    [43]N. Mohan, “Powe electronic circuits : an overview,” in Proc. IEEE IECIN, 1988, Singapore, pp. 522-527.
    [44]X. Wei, S. Kuroiwa, T. Nagashima, M. K. Kazimierczuk, and H. Sekiya, “Push-pull class-EM power amplifier for low harmonic-contents and high output-power applications,” IEEE Trans. Circuits Syst. I, Reg. Papers., vol. 59, no. 6, pp. 2137-2146, Feb. 2012.
    [45]M. K. Kazimierczuk, “RF Power Amplifier,” 2008.
    [46]D. K. Choi and S. I. Long, “The effect of transistor feedback capacitance in class-E power amplifiers,” IEEE Trans. Circuits Syst. I, Rwg. Papers., vol. 50, no. 12, pp. 1556-1559, Dec. 2003.
    [47]J. S. Glaser and J. M. Rivas, “A 500W push-pull dc-dc power converter with a 30 MHz switching frequency,” in Proc. IEEE APEC, 2010, Plam Springs, pp. 654-661.
    [48]N. O. Sokal and F. H. Raab, “Harmonic output of Class-E RF power amplifiers and load coupling network design,” IEEE J. Solid-State Circuits., vol. 12, no. 1, pp. 86-88, Feb. 1977.
    [49]Y. F. Li and C. S. Tseng, “Tracking control of class E inverter for duty cycle control,” in Proc. IEEE ISIE, 2014, Istanbul, pp. 2643-2647.
    [50]M. Kazimierczuk, “Collector amplitude modulation of the class E tuned power amplifier,” IEEE Trans. Circuits Syst. I, Fundam. Theory Appl., vol. 31, no. 6, pp. 543-549, Jun. 1984.
    [51]D. Pertreus, A. Grama, S. Cadar, E. Plaian and A. Rusu, “Design of a plasma generator based on E power amplifier and impedance matching,” in Proc. IEEE OPTIM, 2010, Brasov, pp. 1317-1322.
    [52]M. K. Kazimierczuk and X. T. Bui, “Class E dc-dc converters with an inductive impedance inverter,” IEEE Trans. Power Electron., vol. 4, no. 1, pp. 124-135, Jan. 1989.
    [53]袁文帝、王岳華、謝孟翰、王弘毅，高頻通訊電路設計，高立圖書有限公司，2001年。
    [54]M. K. Kazimierczuk and K. Puczko, “Power-output capability of class E amplifier at any loaded Q and switch duty cycle,” IEEE Trans. Circuits Syst., vol. CAS-36, no. 8, pp. 1142-1143, Aug. 1989.
    [55]D. Maksimovic, “A mos gate drive with resonant transitions,” in Proc. IEEE PESC, 1991, Cambridge, pp. 527-532.
    [56]W. Saito, I. Omura, T. Domon, and K. Tsuda, “High voltage and high switching frequency power supplies using a GaN-HEMT,” in Proc. IEEE CSICS, 2006, San Antonio, pp. 253-256.
    [57]Y. D. Kim, I. O. Lee, I. H. Cho, G. W. Moon, “Hybrid dual full-bridge dc-dc converter with reduced circulating current output filter and conduction loss of rectifier stage for RF power generator application,” IEEE Trans. Power Electron., vol. 29, no. 3, pp. 1069-1081, Apl. 2013.
    [58]DRF1200 Data Sheet, Microsemi Inc., 2013.
    [59]DRF1300 Data Sheet, Microsemi Inc., 2013.
    [60]ARF446FL Data Sheet, Microsemi Inc., 2007.
    [61]DE275-501N16A Data Sheet, IXYS Inc., 2003.
    [62]IXFN48N50 Data Sheet, IXYS Inc., 2000.
    [63]IXRFD631 Data Sheet, IXYS Inc., 2012.
    [64]UC3843 Data Sheet, Texas Inc., 2015.
    [65]SN74HC74 Data Sheet, Texas Inc., 2015.

    下載圖示 校內：2019-07-31公開
    校外：2019-07-31公開
    QR CODE