本論文主要的研究方向為摻雜鹼金屬鉀對於有機太陽能電池的影響，我們使用CuPc和C60兩種小分子材料當作元件的主動層，製作基本結構為(Glass/ITO/CuPc/C60/BCP/Al)並使其最佳化。藉由在CuPc和C60介面鍍上鹼金屬鉀應用至太陽能電池元件上，探討鹼金屬鉀元素對元件的影響。
實驗過程中，摻雜鉀的含量控制是相當重要的參數之一，過量的鉀會使得元件之P-N接面形成P-M(Metal)-N接面，使得元件效能變差，因此我們除了嘗試找出對元件最佳的鉀含量，並且在介面和離介面不同之距離做了摻雜距離之調變；根據文獻，在CuPc和C60兩種小分子材料藉由鍍鹼金屬鉀，對於此結構的能階會有所改變，透過理論上的計算，能使開路電壓多提升0.35V；然而應用在元件時，觀察到開路電壓只有些微的提升，反倒是在元件摻雜鉀在介面位置且做退火條件75℃、10min時，短路電流有很顯著的增加，這和當初所要預期的現象不同，因此接下來則將針對電流提升的現象，我們試著找出可能提升電流的各種原因，歸納出微量摻雜鹼金屬元素鉀以及退火對太陽能電池影響機制。

The main research in this paper discusses the effect caused by doping Alkali metal potassium for organic solar cells. We use two types of small molecular materials, CuPc and C60, as active layer of solar cells and produce the basic structure (Glass / ITO / CuPc/C60/BCP/ Al) and the device with better performance can be achieved.
The most important parameter in this experiment is to control the ratio of deposited potassium and CuPc. Excessive deposited potassium in the interface between the CuPc and C60 formed the P-M(metal)-N structure that degraded the device performance. Except the appropriate ratio of potassium and CuPc in the active layer of device, we tried to bury the potassium in the CuPc or C60 with different distance from the interface to observe the effect to devices. According to reference, the energy level of CuPc and C60 molecules could variety by doping the potassium, and the theory values of open circuit voltage could be increased 0.35 eV. When the potassium doped between the interfaces of the device, the open circuit voltage increased slightly, but the short circuit current density (Jsc) improved significantly after annealing at 75oC for 10 min. This situation is different from our expectation. So that, in this work, we tried to find the reasons and the mechanism for the improvement of Jsc after doping potassium and subsequent annealing by the XPS, PL, the mobilities of the transport carriers and C-V measurement.

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