本研究以實際電漿清潔樣品為研究對象，透過量測清潔前後之水滴接觸角變化，評估電漿清潔處理對材料表面性質改善之效果是否符合接合需求，並搭配剪應力試驗取得實際接合強度數據。由於半導體封裝製程中需整合多種不同材料，界面區域容易受到污染物、氧化物及熱膨脹係數不匹配等因素影響，進而導致界面脫層問題，對元件於不同服役環境下之可靠度與良率造成顯著風險。因此，本研究針對界面接合強度之提升進行參數最佳化設計，探討電漿處理關鍵因子，包括氣體種類、功率、氣體流量及處理時間等參數。研究中採用田口品質工程法之 L8 直角表進行實驗規劃，並透過 S/N 比分析找出最佳參數組合；後續再利用 S/N 反應分析表評估各控制因子對接合強度之影響程度，以確認關鍵影響因子。研究結果顯示，經最佳化參數設計後，界面接合強度由原先的 7 MPa 提升至 64.51 MPa，顯示電漿處理對提升界面接合性能具有顯著效果。此外最佳參數組合能在較短製程時間內大幅提升接合強度，進一步增強半導體元件於不同使用環境下之可靠度與適用性。

With the increasing integration of heterogeneous materials in semiconductor packaging, interface contamination, surface oxidation, and the mismatch of coefficients of thermal expansion (CTE) can cause interfacial delamination and reduce package reliability. Therefore, this study optimized plasma cleaning parameters to improve the interfacial bonding strength of semiconductor packaging materials.Actual plasma-cleaned specimens were evaluated by measuring the water contact angle before and after plasma treatment to assess the improvement in surface properties. In addition, die shear tests were conducted to determine the bonding strength. The Taguchi L8 orthogonal array was adopted to optimize four process parameters, including gas type, plasma power, gas flow rate, and treatment time. The optimal parameter combination was determined through signal-to-noise (S/N) ratio analysis, and S/N response analysis was used to identify the most influential process factor.The results showed that the optimized plasma treatment increased the bonding strength from 7 MPa to 64.51 MPa, demonstrating a significant improvement in interfacial bonding performance. Moreover, the optimized process effectively enhanced bonding strength within a shorter processing time, thereby improving the reliability and applicability of semiconductor packages under various operating conditions.

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