本研究使用射頻磁控濺鍍法在不同製程條件下沉積了氧化矽鋅錫薄膜，並探討其特性。隨後，將這些氧化矽鋅錫薄膜應用於光電元件，包括紫外光感測器、薄膜電晶體和光電晶體。
在第一部分中，我們通過調整二氧化矽的濺鍍瓦數和退火溫度，研究了不同特性的氧化矽鋅錫薄膜的結構、材料和光學特性。結果顯示，所有薄膜都呈非晶結構，且具有均勻的表面。經歷300°C和400°C退火的樣品方均根粗糙度大約為1.5奈米。經歷500°C退火的樣品方均根粗糙度大約為0.8奈米。隨著二氧化矽濺鍍瓦數的增加，薄膜中的氧空缺減少，並且光能隙增加。
在第二部分中，我們使用磁控濺鍍法製備了氧化矽鋅錫光感測器，並通過調整二氧化矽濺鍍瓦數來探討其特性。結果顯示，SZTO20及SZTO40光感測器呈現歐姆型態的特性，而SZTO60及SZTO80光感測器則呈現蕭基型態的特性，並且暗電流隨著二氧化矽濺鍍瓦數的增加而減少。此外，二氧化矽濺鍍瓦數對響應時間有顯著影響，隨著濺鍍瓦數的增加，響應時間減少。我們在二氧化矽濺鍍瓦80W的條件下製造出表現最好的元件，有最佳的光暗電流比252.5倍，最好的拒斥比 5.25 ×103 和最快的開關時間，上升時間為18秒，下降時間為22秒。
在第三部分中，我們使用磁控濺鍍法製備了氧化矽鋅錫薄膜電晶體。通過控制二氧化矽濺鍍瓦數，調節自由載子和缺陷的數量，從而改變薄膜電晶體的電特性。研究結果顯示，二氧化矽濺鍍瓦數對漏電流有明顯影響。此外，在500°C的退火處理後，我們成功改善了薄膜電晶體的特性，並得到SZTO40經過500°C退火一小時的元件有著最好的開關電流比 7.24×104 ，場效電子遷移率 0.37 cm2/V s, 臨界電壓為-6.13 V, 次臨界擺幅為為 2.15 V/dec。此外，我們同樣成功製作出SZTO40光電晶體，並得到響應拒斥比為2.84×105。

In this study, silicon-zinc-tin oxide (SZTO) thin films were deposited using radio frequency magnetron sputtering under different process conditions, and their characteristics were investigated. Subsequently, these SZTO thin films were applied in optoelectronic devices, including ultraviolet (UV) photodetectors, thin-film transistors, and phototransistors.
In the first part, we studied the structure, material, and optical properties of different types of SZTO thin films by adjusting the sputtering power of silicon oxide and annealing temperature. The results showed that all the thin films exhibited an amorphous structure and had a uniform surface. The root-mean-square roughness of the samples annealed at 300°C and 400°C was approximately 1.5 nanometers, while the roughness of the samples annealed at 500°C was about 0.8 nanometers. As the sputtering power of silicon oxide increased, the oxygen vacancies in the thin films decreased, and the optical bandgap increased.
In the second part, we fabricated SZTO photodetectors using magnetron sputtering and investigated their characteristics by adjusting the sputtering power of silicon oxide. The results showed that SZTO20 and SZTO40 photodetectors exhibited ohmic characteristics, while SZTO60 and SZTO80 photodetectors exhibited Schottky characteristics. The dark current decreased with an increase in the sputtering power of silicon oxide. Moreover, the sputtering power of silicon oxide had a significant impact on the response time, with a decrease in response time as the sputtering power increased. At the optimal sputtering power of silicon oxide, we obtained the best-performing device with a maximum photo/dark current ratio of 252.5, a rejection ratio of 5.25 × 103, and the fastest switching time with a rising time of 18 seconds and a falling time of 22 seconds.
In the third part, we prepared SZTO thin-film transistors using magnetron sputtering. By controlling the sputtering power of silicon oxide, we adjusted the number of free carriers and defects to modify the electrical characteristics of the thin-film transistors. The results showed that the sputtering power of silicon oxide had a significant influence on the drain current leakage. Furthermore, after annealing at 500°C, we successfully improved the characteristics of the thin-film transistors. The SZTO40 device annealed at 500°C for one hour exhibited the best performance with a switch current ratio of 7.24 × 104, a field-effect electron mobility of 0.37 cm2/V s, a threshold voltage of -6.13 V, and a subthreshold swing of 2.15 V/dec. Additionally, we also successfully fabricated SZTO40 photodetectors and obtained a response rejection ratio of 2.84 × 105.

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