本論文探討兩主題關於射頻及毫米波壓控振盪器電路設計，首先是對於60 GHz頻帶無線通訊系統極為重要的毫米波低相位雜訊壓控振盪器。再者是探討具電磁干擾抑制之微機電蜂巢型電感之設計與其應用於Ku-band 壓控振盪器對於頻率牽引效應之改善。前一主題使用台積電 90 奈米CMOS 製程，而後一主題使用台積電180 奈米CMOS 製程。毫米波壓控振盪器使用變壓器調整技巧達到低相位雜訊及寬頻效果，以產生60
GHz 頻帶外差收發機之本地振盪源訊號，以驅動混頻器進行升降頻之功能。本次設計之可調頻率範圍為53 ~ 59.1 GHz，操作電壓為1 V，直流功耗為15.5 mW。緩衝級之操作電壓為1.2 V，直流功耗為32.4 mW，整體電路在距離55.64 GHz 振盪訊號1 MHz位移下量測之相位雜訊為-94.69 dBc/Hz，量測之輸出功率在-5.6 ~ -1.1 dBm，晶片面
積約為0.82 mm2。本實驗室開發之蜂巢型電感已證實具有相當程度的電磁干擾抑制之能力，並將其應用於2.4 GHz 射頻前端電路 [38], [39]。本論文旨在延伸蜂巢型電感之應用到18GHz 頻帶，且和傳統對稱型電感比較其串音現象及應用於壓控振盪器的頻率牽引等效應。此外，雖然蜂巢型電感使用獨特的繞線布局達到對於鄰近干擾源多方向的電磁
干擾抑制效果，但因使用三處跨層及穿孔使得電感品質因素降低。因此，本論文採用微機電製程的基板蝕刻技術來消除矽基板所引起的能量損耗及元件和基板間的雜散電容，以此提升元件品質因素及操作頻率，同時將電感尺寸縮小以得到高頻應用所對應的電感值。本實驗將蜂巢型及對稱型電感置入於Ku-band 壓控振盪器，操作電壓為1.8 V，直流功耗為5.29 mW，而緩衝級之操作電壓為1.8 V，直流功耗為20.2 mW。
本次設計之頻率為16.7 ~ 17.7 GHz，量測之平均輸出功率約為-21 dBm，在1 MHz 位移下量測之相位雜訊為-102.4 ~ -104.4 dBc/Hz。實驗結果顯示微機電蜂巢型電感不論是在串音現象或頻率牽引效應都有較好的抑制效果(改善大過10-15 dB)，整體晶片面積包含測試鍵及壓控振盪器電路約為4.7 mm2。

This thesis presents two topics about radio frequency (RF) and millimeter-wave (MMW)voltage-controlled oscillator (VCO) circuit designs. The first topic introduces the design ofMMW 60 GHz low phase noise VCO, which is essential to the 60 GHz band wireless communication system. The second topic is about the design of electromagnetic interference (EMI) suppression micro-electromechanical systems (MEMS) honeycomb-shaped inductor and its application to Ku-band VCO to mitigate the injection pulling effects. The former design is implemented in TSMC 90 nm CMOS process, while the latter one is fabricated in TSMC 0.18 m CMOS process.
A MMW VCO using transformer-tuning scheme features low phase noise and wide tuning range, which provides local oscillator (LO) signals to mixer stage for frequency
conversion in a 60 GHz band heterodyne transceiver. The tuning range of VCO covers from 53 to 59.1 GHz, with dc power consumption of 15.5 mW from a supply voltage of 1 V. The buffer stage consumes 32.4 mW with a supply voltage of 1.2V. The measured phase noise is -94.69 dBc/Hz at 1 MHz offset from 55.64 GHz, and the output power ranges from -5.6 to -1.1 dBm within the tuning range, and the chip size is approximately 0.82 mm2.
A honeycomb-shaped inductor implemented in 2.4 GHz RF front-end circuits has been proved to exhibit remarkable EMI suppression, which has been reported in [38], [39]. In this thesis, the study attempts to extend the application of honeycomb-shaped inductor in higher frequency bands and focuses on its application to VCOs as compared with the traditional symmetric spiral inductor (e.g., crosstalk, injection pulling effects). In addition, the unique inductor layout pattern using three cross-layers and vias to realize multi-direction
interference suppression to adjacent interferers, suffers from low inductor Q-factor. Thus, MEMS process with substrate etching is adopted to eliminate the loss mechanism from the silicon substrate and the parasitic capacitance between the components and substrate, which
improves the components Q factor and the operation frequency, meanwhile the inductor is down-sizing to obtain smaller inductance. The honeycomb-shaped and symmetric spiral inductors are implemented in Ku-band VCOs, with dc power consumption of 5.29 mW from a supply voltage of 1.8 V. The buffer stage consumes 20.2 mW with a supply voltage of 1.8V. The measured oscillation frequency ranges from 16.7 to 17.7 GHz and the average output power is -21 dBm, and the phase noise ranges from -102.4 to -104.4 dBc/Hz at 1 MHz offset. The experimental results show that the MEMS honeycomb-shaped inductors outperform symmetric inductors in crosstalk suppression and injecting pulling mitigation by more than 20 dB and 15 dB, respectively. The fabricated chip, which includes testkeys and VCOs, occupies area of 4.7 mm2.

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