本篇論文主要研究方向可分成兩大部份，第一個部份主要致力於發展新穎的微波介電材料，目標為合成出目前學界與業界都尚未應用的微波介電材料，並從微結構、物理特性與製程條件的差異下，探討這些條件對微波介電特性所造成的差異。第二部份則為介紹被動元件的應用，並與前段所介紹的介電材料做結合，並於其實作中探討介電特性與被動元件尺寸的相互關係。

　　第一部份要介紹兩組微波介電材料，分別為MgSnNb2O8與Mg2YVO6。MgSnNb2O8為Wolframite結構，單斜晶系，空間群以P2/c(13)方式對稱；在1430℃燒結溫度下，持溫燒結6小時，可得到最佳的微波介電特性：εr ~ 22.05、Q×f ~ 17,100 GHz (at 6.857GHz)及τf ~ –54.6 ppm/℃。Mg2YVO6為Zircon結構，四方晶系，空間群為I41/amd (141)方式對稱；在燒結溫度為1290℃，持溫燒結4個小時，可得到最佳的微波介電特性：εr ~ 10.88、Q×f ~ 68,300 GHz (at 10.249 GHz)及τf ~ –53.9 ppm/℃。

　　第二部份則設計與實作一組操作於2.45 GHz的微帶線帶通濾波器，主體為一Ｕ型諧振器，利用兩個T型諧振器饋入，並透過平行耦合的方式產生帶通的效果。Ｔ型諧振器其中一端可設計成一Open Stub來達到抑制倍頻寄生響應。最後，將此電路設計實作於FR4、氧化鋁和Mg2YVO6三種基版上，並量測其頻率響應。由量測結果可以得知，以高介電係數與低介電損耗的材料為電路基板時，確實可以達到縮小面積與提昇效能的需求。

There are two main subjects in this thesis. First, we have synthesized two novel microwave dielectric materials which have not been developed and applied in academic and industrial fields yet. We also discuss the dielectric and microwave differences caused by morphology, physical properties and process conditions. Second, there will be a discussion of passive components and improvement of circuit size in different substrates.

First part is the introduction of two novel microwave dielectric materials, MgSnNb2O8 and Mg2YVO6. MgSnNb2O8 has Wolframite structure belonged to monoclinic lattice system and the space group is P2/c(13). MgSnNb2O8 has the best microwave dielectric propertiesεr ~ 22.05、Q×f ~ 17,100 GHz (at 6.857GHz)、τf ~ –54.6 ppm/℃ while sintering at 1430℃ for 6 hours. Mg2YVO6 has Zircon structure belonged to tetragonal lattice system and space group is I41/amd (141). Mg2YVO6 has the best microwave dielectric properties εr ~ 10.88、Q×f ~ 68,300 GHz (at 10.249 GHz)、τf ~ –53.9 ppm/℃ while sintering at 1290℃ for 4 hours.

Second part is the designation and fabrication of a microstrip band-pass filter and the first band is controlled at 2.45 GHz. This filter is constructed by two T-shaped resonators and a U-shaped hair-pinned resonator centered at middle. The U-shaped microstrip is parallel coupled by two T-shaped microstrips. The open stub side on T-shaped is designed to suppress the spurious response at second band. At last, the pattern was printed on FR4, Al2O3 and Mg2YVO6–1290℃–4hrs substrates. By comparing the frequency of measured results, we can observe the improvement of performance and size reduction by applying high dielectric constant and loss dielectric loss substrates.

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