本文以有機金屬氣相沈積法（metalorganic chemical vapor-phase deposition, MOCVD）在（0001）方向的藍寶石基板（sapphire）上成長氮化鎵/氮化銦鎵及氮化鎵/氮化鋁鎵超晶格結構，並分別成長氮化鎵/氮化銦鎵多重量子井於兩種超晶格結構上，我們利用原子力顯微鏡（AFM）、掃瞄式電子顯微鏡（SEM）來觀察表面，並使用陰極射線螢光光譜（CL）、微光致螢光光譜（micro-PL）來研究在不同超晶格結構上所成長之氮化鎵/氮化銦鎵量子井之發光特性。由原子力顯微鏡、掃瞄式電子顯微鏡量測結果可知，表面分佈許多六角型凹洞，一般所通稱之為V-defect，其V型缺陷的大小約為100nm。此外，微光致螢光光譜的結果可知，成長在氮化鎵/氮化鋁鎵超晶格結構上的多重量子井有較高之發光效率。

This thesis aims at fabricating and characterizing of GaN/InGaN multiple quantum wells（MQWs）grown on GaN/InGaN or GaN/AlGaN superlattice underlayer, which were grown by MOCVD on（0001）sapphire substrates. Surface morphologies of these samples were examined by atomic force microscope （AFM）and scanning electron microscope（SEM）. The optical properties of GaN/InGaN MQWs grown on various superlattice underlayers were investigated by cathodoluminescence（CL）and micro-photoluminescence （micro-PL）. The AFM and SEM images showed open hexagonal inverted pyramids on the（0001）plane of the epi-wafer surfaces, the so-called “V-defect”, and the feature size of the V-defect is about 100 nm. Furthermore, the micro-PL revealed that GaN/InGaN MQWs grown on GaN/AlGaN superlattice underlayer have higher luminescence efficiency.

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