CZTSSe 為具有潛力的光電材料，與 CdTe 或 CIGS 相比，其組成元素地殼蘊含 量豐富，成本低廉且對環境友善。
本研究使用二甲基亞碸溶液旋轉塗布法製作 CZTSSe 薄膜，研究中探討不同烘烤 溫度對於前驅物與硒化後之 CZTSSe 薄膜之影響，利用 SEM、EDS 分析硒化前後薄 膜與成分比例之變化，XRD 與 Raman 確認 CZTSSe 薄膜之晶體結構與晶粒大小。
由結果顯示，烘烤溫度較高，薄膜之成分組成較符合合理之比例，退火後其表面 緻密度較高;而前驅物塗布層數也會影響薄膜之成分之比例與退火後的表面、側面形 貌。
在退火過程中使用多階段退火的方式能夠使表面緻密度提高，使用此方法所製作 之元件效率 1.87%，開路電壓為 0.22V，短路電流密度為 30.3mA/cm2，填充因子為 28.2%。
在塗佈前驅物溶液前先塗佈硫化錫緩衝層，可以改善 CZTSSe 薄膜與 Mo 基板之 間的孔隙及裂紋，對於最後製作之元件效率有所之助益，效率提升至 2.54%，開路電 壓為 0.21V，短路電流為 36.38mA/cm2，填充因子為 33.3%，短路電流與填充因子的 數值皆上升。

CZTSSe is a potential material for thin film solar cells since its constituents are earth abundant, low cost and environment friendly material compared to CIGS or CdTe. In this study, CZTSSe films were prepared by spin coating method of dimethyl hydrazine(DMSO) solution. The effects of different baking temperatures on the precursor and selenized CZTSSe film were investigated. The changes of film’s morphology and composition ratio before and after selenization were analyzed by SEM and EDS. XRD and Raman confirmed the crystal secondary phase and grain size of the CZTSSe film.The result shows the higher baking temperature , the surface morphology more denser and the
competition ratio closer to the ideal .
The multi-stage annealing make surface much denser, which is beneficial to the performance of the device . The best solar cells showed a conversion efficiency of 1.87%, open-circuit voltage of 0.22V, short-circuit current of 30.3mA/cm2, fill factor of 28.2%.
In order to improve the high-density voids and cracks between the CZTSSe film and Mo substrate. we present the insertion of a SnS buffer layer at Mo/CZTS interface to inhibit the undesired reaction and improve the thin-film quality. Crack-free and smooth morphology was obtained. The cell efficiency was significantly improved. The best solar cells showed a conversion efficiency of 2.54%, open-circuit voltage of 0.21V, short- circuit current of 36.38mA/cm2, fill factor of 33.3%.

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