為了製作出高波長選擇性的紅外光偵測器，本論文結合塔姆電漿共振(Tamm plasmon resonance)以及金屬-半導體-金屬光偵測器。塔姆電漿共振是在金屬和布拉格反射鏡(Distributed Bragg reflector，DBR)的交界處產生強烈的電場侷域，電磁波會被高度限制於在金屬和布拉格反射鏡的界面，金屬會發生強烈的吸收而產生熱載子。透過反射光譜量測，可以在布拉格反射鏡的高反射區域內觀察到非常強烈且窄頻寬的反射波谷，代表有明顯的吸收峰產生，這便是塔姆電漿共振所具有的高波長選擇性的特性。利用此特性結合作為熱載子收集的金屬-半導體-金屬結構，以研究塔姆電漿共振形成的紅外光偵測器的光電特性。
首先利用電子束蒸鍍機蒸鍍Au薄膜於布拉格反射鏡上方，以產生強烈電場侷域的塔姆電漿共振，並探討不同Au薄膜厚度對於塔姆電漿共振吸收波長的影響。在金屬-半導體-金屬光偵測器設計上分別有指叉與垂直結構，從實驗結果得知指叉結構的金屬-半導體-金屬光偵測器由於半導體InGaO和Si的材料導電性太差，導致載子的傳輸路徑不如同原先預期，因此無法完成光偵測器的製作。垂直結構的金屬-半導體-金屬光偵測器之半導體InGaO厚度會影響元件的暗電流與穩定性，推測原因為InGaO材料本身就具備缺陷，經過多次的載子的流動，載子容易直接擊穿InGaO的缺陷，因此較薄厚度的InGaO穩定性會更差，漏電流也會增加。半導體為Si與InGaO相比不只暗電流明顯降低約為兩個數量級，穩定性也有良好的改善，推測原因為Si本身材料的缺陷較InGaO少，載子較不易直接擊穿Si的缺陷。
垂直結構的金屬-半導體-金屬光偵測器於照光後無產生光電流，推測有兩個主要原因，第一為第三道Au會有遮光的問題，導致塔姆電漿共振的吸收峰大幅降低，造成較少熱載子的產生；第二為半導體本身材料缺陷過多，導致塔姆電漿共振所產生的熱載子被半導體的缺陷捕捉而無法往上傳輸到第三道Au。藉由將第三道Au改為ITO的實驗設計已解決遮光造成塔姆電漿共振產生熱載子減少的問題，因此排除原先預測無產生光電流的第一個原因。
利用濺鍍機成長半導體作為主動層受制於材料的大量缺陷態，一方面產生的熱載子都被缺陷捕捉導致無光電流的產生；另一方面也因為缺陷太多容易導致崩潰而造成短路，不利於元件的穩定性。若增加主動層的厚度，傳輸路徑太長會對熱載子的蒐集不利。加上布拉格反射鏡不耐高溫，無法透過退火改善材料品質，以上是本論文所面臨的問題。

We obtained high wavelength-selective photodetector in near-infrared by combining Tamm plasmon (TP) and metal-semiconductor-metal (MSM) structure. TP formed at the boundary between a metal and a distributed Bragg reflector (DBR). The electromagnetic surface wave could be highly confined in the metal/DBR interface, allowing for strong absorption by the metal layer to generate hot electrons. The structures of the devices were divided into interdigital and vertical. According to the results, I-V characteristics of interdigital structures exhibited high leakage current owing to poor electrical conductivity of the active layer. Results of vertical structures showed that the thicker of the active layer, the lower of the dark current and the stabler of the devices, but it was unfavorable to the transportation of hot electrons. Using sputtered Si as the active layer compared to sputtered InGaO had a great improvement in lowering dark current and the stability of the devices. We replaced ITO with Au to increase the transmittance for generating more hot electrons, but photocurrent still wasn’t produced. To sum up, no photocurrent was produced due to massive defects in the semiconductor which was deposited by E-beam evaporator and Sputter.

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