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研究生：	張宏榮 Chang, Hong-Rong
論文名稱：	表面硫化處理對氮化銦接觸之研究 The study of InN contact by sulfide treatment
指導教授：	張守進 Chang, Shoou-Jinn
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	54
中文關鍵詞：	氮化銦、硫化銨、硫化
外文關鍵詞：	InN, (NH4)2Sx, Sulfide
相關次數：	點閱：50 下載：2
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本論文以近十年來相當熱門的氮化銦Ⅲ-Nitride族窄能隙半導體作為研究主軸。論文分為兩個部分，第一部分是以硫化銨(NH4)2Sx硫化氮化銦表面，觀察硫化對氮化銦接觸之影響；首先將氮化銦浸入60℃硫化銨三十分鐘，接著利用E-gun鍍白金200nm為電極，觀察硫化對氮化銦電性的影響，另外以AFM、SEM、AES，觀察硫化對氮化銦表面的影響。
第二部分則是討論改變硫化時間和改變硫化溫度對氮化銦接觸的影響為何，在改變硫化時間的實驗中是以固定硫化的溫度為60℃，分別改變硫化的時間三十分鐘，四十五分鐘，六十分鐘；而在改變硫化溫度的實驗中則是固定硫化的時間三十分鐘，接著改變硫化的溫度40℃，60℃，80℃，之後再利用E-gun鍍白金200nm為電極，觀察改變硫化時間和硫化溫度對氮化銦電性的影響，以及照AFM、SEM、AES，觀察改變硫化時間和硫化溫度對表面電性的影響。

The thesis is made up of two parts:
Part Ⅰ: This part is research the sulfide by (NH4)2Sx on Indium Nitride (InN) contact. The samples were immersed into (NH4)2Sx at 60℃ 30min, then the Pt (200nm) contact were deposited by E-gun evaporation onto the InN. Next step, we investigate the effect by (NH4)2Sx on InN contact. Additional the samples were investigated by AFM, SEM, AES to observe the sulfide on InN surface.
Part Ⅱ: This part is investigate the sulfide with different time and different temperature on InN contact. For different sulfide time, we fixed the temperature at 60℃, then change the sulfide time with 30min, 45min, 60min. For different sulfide temperature, we fixed the sulfide time at 30min, next change the sulfide temperature with 40℃, 60℃, 80℃.
The Pt (200nm) contact were deposited by E-gun evaporation onto the InN. Then we investigate the effect with different sulfide time and different sulfide temperature on InN contact. At last, the samples were investigated by AFM, SEM, AES to observe the sulfide on InN surface.

Contents
Chapter 1  Introduction	1
1-1	Background	1
1-2	Motivation	3
1-3  Program	4
Chapter 2  Basic Theory and Measurement System	7
2-1 Theory of Metal-Semiconductor contact	7
2-2 Principle of the MSM photodetector	10
2-3 Measurement Instruments	13
2-3-1 Hall measurement	13
2-3-2 Auger electron spectroscopy	13
2-3-3 X-ray diffraction measurement	16
2-3-4 Atomic force microscope	17
2-3-5 Scanning Electron Microscope (SEM)	18
2-4 Fabrication system	21
Chapter 3  The effect of growth condition in InN	28
3-1 Introduction	28
3-2 Experiments	29
3-3 Measurement	29
3-3-1 X-ray analysis	29
3-3-2 Hall measurement	30
3-3-3 AFM analysis	31
Chapter 4  Surface treatment of InN using (NH4)2Sx	38
4-1 Introduction	38
4-2 Experiments	39
4-3 Measurements	39
4-3-1 Hall measurement	40
4-3-2 AFM measurement	41
4-3-3 AES measurement	42
Chapter 5  Conclusion and Future works	49
5-1 Conclusion	49
5-2 Future works	49

Table and Figure Captions
Table 1-1 Sample growth condition	33

Fig. 1-1 Band gap versus lattice constant of III-N semiconductor materials.	5
Fig. 1-2 Carrier concentration for InN film grown in a variety of techniques.	5
Fig. 1-3 Hall mobility for InN film grown in a variety of techniques.	6
Fig. 1-4 The program of this study.	6

Fig. 2-1 Energy band diagram of metal with n-type semiconductor.	22
Fig. 2-2 Diagram of carrier transport mechanisms of Schottky barrier under forward bias.	22
Fig. 2-3 Three type transitions for photons absorbed in semiconductor.	23
Fig. 2-4 The structure of MSM photodetector.	23
Fig. 2-5 Energy band diagram of MSM photodetector under different applied bias (a) V=0, (b) V=VRT, and (c) V=VFV.	24
Fig. 2-6 Basic setup and illustration of Hall effect.	25
Fig. 2-7 Two views of the Auger process.	25
Fig. 2-8 Basic setup and illustration of XRD.	26
Fig. 2-9 Bragg’s law.	26
Fig. 2-10 Schematic diagram of an Atomic Force Microscope system.	27
Fig. 2-11 The schematic of sulfide process	27

Fig. 3-1 X-ray diffraction pattern of the InN film with different growth temperature.	34
Fig. 3-2 X-ray diffraction pattern of the InN film with different growth pressure.	34
Fig. 3-3 Hall measurement of the InN film with different growth temperature.	35
Fig. 3-4 Hall measurement of the InN film with different growth pressure.	35
Fig. 3-5 AFM of the InN film with different growth temperature.	36
Fig. 3-6 AFM of the InN film with different growth pressure.	37

Fig. 4-1 Hall measurement of InN with sulfide 30min 60℃	43
Fig. 4-2 Hall measurement of the InN with (a) different sulfide temperature and (b) different sulfide time.	44
Fig. 4-3 AFM of the InN with different sulfide temperature (a)as grown, (b) 40℃, (c)60℃, (d)80℃.	45
Fig. 4-4 AFM of the InN with different sulfide time (a)as grown, (b) 30min, (c)45min, (c)60min.	46
Fig. 4-5 AES of InN (a)with HCL, (b)without HCL clean process.	47
Fig. 4-6 AES of the InN with different sulfide temperature (a)40℃, (b)60℃, (c)80℃, and 30min.	47
Fig. 4-7 AES of the InN with different sulfide time (a)30min, (b)45min, (c)60min, and 60℃.	48
                                    

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校內：2009-07-03公開
校外：2009-07-03公開

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