本論文主要分析與研製研製固態堆疊型諧振器(Solidly Mounted Resonator, SMR)。SMR結構為在矽基板上沉積厚度為諧振頻率四分之一波長的高低聲阻抗材料，作為元件的反射層，接著以鉑作為下電極、氮化鋁為壓電層、鋁為上電極。實驗為比較以電子束蒸鍍與濺鍍機沉積金屬薄膜的粗糙度，且探討不同聲波阻抗比的反射層Mo/Ti及W/Ti製作SMR，比較他們所製作出來的SMR特性，包含Q值、機電耦合係數及諧振頻率，同時討論聲波阻抗比與薄膜粗糙度的關係，較大的聲波阻抗比是否具有更小的薄膜粗糙度。實驗結果發現，以電子束蒸鍍完成金屬薄膜，確實具有更小的薄膜粗糙度。在SMR元件製作與諧振特性分析中，經量測結果發現，Mo/Ti的反射層，在三種不同壓電層厚度下，皆沒有諧振特性，而W/Ti在三種不同壓電層厚度下，皆有明顯諧振特性，其結果符合在其他相同製程條件情況下，具有更大的聲波阻抗比之反射層材料，更容易產生諧振特性的推測。在Q值的計算上，本研究利用一般文獻計算Q值方式，另外提出考慮計算阻抗不匹配下的輸入阻抗值，計算Q值，發現能達到較佳的Q值也更能表現單一SMR元件的Q值。

This thesis mainly analyzes and develops the Solidly Mounted Resonator (SMR) with Mo/Ti or W/Ti Bragg reflection layers which was deposited by using electron beam evaporation. The experimental results showed that the surface roughness Sq’s of W/Ti and Mo/Ti reflection layers were 9.9 nm and 10.6 nm, respectively, smaller than the ones deposited by sputtering in most published literatures. The resonance characteristics for SMRs with W/Ti reflection layer were observed clearly. However, no obvious resonance was found for SMRs with Mo/Ti. The observed resonant frequencies were above 5 GHz. The highest Q values in this study were 50.64 for series resonance and 41.66 for parallel resonance.

[1] Y. Liu, Y. Cai, Y. Zhang, A. Tovstopyat, S. Liu, and C. Sun, "Materials, design, and characteristics of bulk acoustic wave resonator: A review," Micromachines, vol. 11, no. 7, p. 630, 2020.
[2] Z. Zhang, Y. Lu, W. Pang, D. Zhang, and H. Zhang, "A high performance C-band FBAR filter," in 2013 Asia-Pacific Microwave Conference Proceedings (APMC), 2013: IEEE, pp. 923-926.
[3] Y. Zou et al., "Dual-mode thin film bulk acoustic wave resonator and filter," Journal of Applied Physics, vol. 128, no. 19, p. 194503, 2020.
[4] 材料與測試. "滤波器在5G新时代的前景." http://www.mat-test.com/Post/Details/PT191103000009bHeKg (accessed 2022).
[5] S.-H. Lee, K. H. Yoon, and J.-K. Lee, "Influence of electrode configurations on the quality factor and piezoelectric coupling constant of solidly mounted bulk acoustic wave resonators," Journal of Applied Physics, vol. 92, no. 7, pp. 4062-4069, 2002.
[6] C. Men and C. Lin, "A comparison of pulsed-laser-deposited and ion-beam-enhanced-deposited AlN thin films for SOI application," Materials Science and Engineering: B, vol. 133, no. 1-3, pp. 124-128, 2006.
[7] H. Cheng, Y. Sun, and P. Hing, "Microstructure evolution of AlN films deposited under various pressures by RF reactive sputtering," Surface and coatings technology, vol. 166, no. 2-3, pp. 231-236, 2003.
[8] A. Ababneh, U. Schmid, J. Hernando, J. Sánchez-Rojas, and H. Seidel, "The influence of sputter deposition parameters on piezoelectric and mechanical properties of AlN thin films," Materials Science and Engineering: B, vol. 172, no. 3, pp. 253-258, 2010.
[9] R. Lanz, P. Carazzetti, and P. Muralt, "Surface micromachined BAW resonators based on AlN," in 2002 IEEE Ultrasonics Symposium, 2002. Proceedings., 2002, vol. 1: IEEE, pp. 981-983.
[10] S. Mahon and R. Aigner, "Bulk acoustic wave devices–why, how, and where they are going," in CS Mantech Conference, 2007, pp. 15-18.
[11] M.-A. Dubois, P. Muralt, H. Matsumoto, and V. Plessky, "Solidly mounted resonator based on aluminum nitride thin film," in 1998 IEEE Ultrasonics Symposium. Proceedings (Cat. No. 98CH36102), 1998, vol. 1: IEEE, pp. 909-912.
[12] K. Lakin, K. McCarron, and R. Rose, "Solidly mounted resonators and filters," in 1995 IEEE Ultrasonics Symposium. Proceedings. An International Symposium, 1995, vol. 2: IEEE, pp. 905-908.
[13] C.-J. Chung, Y.-C. Chen, C.-C. Cheng, C.-L. Wei, and K.-S. Kao, "Influence of surface roughness of Bragg reflectors on resonance characteristics of solidly-mounted resonators," ieee transactions on ultrasonics, ferroelectrics, and frequency control, vol. 54, no. 4, pp. 802-808, 2007.
[14] T. Tanskaya, V. Zima, and A. Kozlov, "The influence of surface roughness of Bragg reflector layers on characteristics of microwave solidly mounted resonator," in 2015 International Siberian Conference on Control and Communications (Sibcon), 2015: IEEE, pp. 1-4.
[15] C. Han et al., "Solidly mounted resonator sensor for biomolecule detections," RSC advances, vol. 9, no. 37, pp. 21323-21328, 2019.
[16] N. Arshi, J. Lu, C. G. Lee, J. H. Yoon, B. H. Koo, and F. Ahmed, "Thickness effect on properties of titanium film deposited by dc magnetron sputtering and electron beam evaporation techniques," Bulletin of Materials Science, vol. 36, no. 5, pp. 807-812, 2013.
[17] J. F. Rosenbaum, Bulk acoustic wave theory and devices. Artech House Acoustics Library, 1988.
[18] S. Katzir, "The discovery of the piezoelectric effect," in the Beginnings of Piezoelectricity: Springer, 2006, pp. 15-64.
[19] P. Dineva, D. Gross, R. Müller, and T. Rangelov, "Piezoelectric materials," in Dynamic fracture of piezoelectric materials: Springer, 2014, pp. 7-32.
[20] 吳朗, 電子陶瓷: 壓電陶瓷. 全欣, 1994.
[21] G. Fuentes Iriarte, "AlN thin film electroacoustic devices," Acta Universitatis Upsaliensis, 2003.
[22] J. Erhart, P. Půlpán, and M. Pustka, Piezoelectric ceramic resonators. Springer, 2017.
[23] L. Qin, Q. Chen, H. Cheng, and Q.-M. Wang, "Analytical study of dual-mode thin film bulk acoustic resonators (FBARs) based on ZnO and AlN films with tilted c-axis orientation," IEEE transactions on ultrasonics, ferroelectrics, and frequency control, vol. 57, no. 8, pp. 1840-1853, 2010.
[24] H. Campanella, "Tunable fbars: Frequency tuning mechanisms," in The 40th European Microwave Conference, 2010: IEEE, pp. 795-798.
[25] M. Terzieva, "Overview of bulk acoustic wave technology and its applications," in National conference with international participation “ELECTRONICA 2016”, 2016, pp. 86-91.
[26] R. Ruby, "11E-2 Review and comparison of bulk acoustic wave FBAR, SMR Technology," in 2007 IEEE Ultrasonics Symposium Proceedings, 2007: IEEE, pp. 1029-1040.
[27] R. G. Polcawich and J. S. Pulskamp, "Additive processes for piezoelectric materials: Piezoelectric MEMS," in MEMS materials and Processes Handbook: Springer, 2011, pp. 273-353.
[28] A. Khan, Z. Abas, H. S. Kim, and I.-K. Oh, "Piezoelectric thin films: an integrated review of transducers and energy harvesting," Smart Materials and Structures, vol. 25, no. 5, p. 053002, 2016.
[29] X.-H. Xu, H.-S. Wu, C.-J. Zhang, and Z.-H. Jin, "Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering," Thin solid films, vol. 388, no. 1-2, pp. 62-67, 2001.
[30] S. Trolier-McKinstry and P. Muralt, "Thin film piezoelectrics for MEMS," Journal of Electroceramics, vol. 12, no. 1, pp. 7-17, 2004.
[31] K.-W. Tay, C.-L. Huang, and L. Wu, "Influence of piezoelectric film and electrode materials on film bulk acoustic-wave resonator characteristics," Japanese journal of applied physics, vol. 43, no. 3R, p. 1122, 2004.
[32] J. Olivares et al., "Combined assessment of piezoelectric AlN films using X-ray diffraction, infrared absorption and atomic force microscopy," Diamond and related materials, vol. 16, no. 4-7, pp. 1421-1424, 2007.
[33] N. Nor, Y. Jing, and N. Khalid, "Characteristics of film bulk acoustic wave resonator using different electrode materials," in AIP Conference Proceedings, 2021, vol. 2347, no. 1: AIP Publishing LLC, p. 020144.
[34] M.-C. Chao, Z. Wang, Z.-N. Huang, S.-Y. Pao, and C. Lam, "Accurate explicit formulae of the fundamental mode resonant frequencies for FBAR with thick electrodes," in IEEE International Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and Time Forum, 2003. Proceedings of the 2003, 2003: IEEE, pp. 794-801.
[35] M. Hara, J. Kuypers, T. Abe, and M. Esashi, "Surface micromachined AlN thin film 2 GHz resonator for CMOS integration," Sensors and Actuators A: Physical, vol. 117, no. 2, pp. 211-216, 2005.
[36] M.-A. Dubois and P. Muralt, "Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering," Journal of Applied Physics, vol. 89, no. 11, pp. 6389-6395, 2001.
[37] S. Enjamuri, A. Amsanpally, and K. J. Raju, "Optimization and analysis of piezoelectric and electrode materials' thickness effects on the performance of film bulk acoustic resonator," in 2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1), 2012: IEEE, pp. 185-188.
[38] Y. Kumar, J. Singh, G. Kumari, R. Singh, and J. Akhtar, "Effect of shapes and electrode material on figure of merit (FOM) of BAW resonator," in AIP Conference Proceedings, 2016, vol. 1724, no. 1: AIP Publishing LLC, p. 020045.
[39] 魏清梁, "固態微型諧振器之壓電層與反射層研製," 碩士論文, 國立中山大學電機工程學系, 2005.
[40] A. Zazerin, A. Orlov, and O. Bogdan, "Bragg reflector acoustic impedance RLC model," ElectronComm, vol. 20, pp. 90-5, 2015.
[41] S.-H. Kim, J.-H. Kim, J.-K. Lee, S.-H. Lee, and K. H. Yoon, "Bragg reflector thin film resonator using aluminium nitride deposited by rf sputtering," in 2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No. 00TH8522), 2000: IEEE, pp. 1535-1538.
[42] W. Newell, "Face-mounted piezoelectric resonators," Proceedings of the IEEE, vol. 53, no. 6, pp. 575-581, 1965.
[43] C.-Y. Chung, Y.-C. Chen, Y.-C. Chen, K.-S. Kao, and Y.-C. Chang, "Fabrication of a 3.5-GHz Solidly Mounted Resonator by Using an AlScN Piezoelectric Thin Film," Coatings, vol. 11, no. 10, p. 1151, 2021.
[44] X. Juan, G. Hao-Shuang, H. Kuan, and H. Ming-Zhe, "Fabrication and frequency response characteristics of AlN-based solidly mounted resonator," Chinese Physics Letters, vol. 26, no. 4, p. 048104, 2009.
[45] 蕭宏, 半導體製程技術導論. 全華圖書股份有限公司, 2014.
[46] 楊啟榮, "濺鍍技術原理," 國立台灣師範大學機電科技學系.
[47] 楊啟榮, "蒸鍍系統原理," 國立台灣師範大學 機電科技學系.
[48] 國家實驗研究院. "科普講堂-電子束蒸鍍(E-beam)." (accessed 2022).
[49] D. N. Ariel-Sternberg. "Tooling Factor Calibration Standard Operating Procedure." (accessed.
[50] C.-J. Chung, Y.-C. Chen, C.-C. Cheng, and K.-S. Kao, "Fabrication and frequency response of solidly mounted resonators with 1/4λ mode configuration," Thin solid films, vol. 516, no. 16, pp. 5277-5281, 2008.
[51] M. Schneider, M. DeMiguel-Ramos, A. J. Flewitt, E. Iborra, and U. Schmid, "Scandium aluminium nitride-based film bulk acoustic resonators," Multidisciplinary Digital Publishing Institute Proceedings, vol. 1, no. 4, p. 305, 2017.
[52] B. Qi, Y. Lu, D. Hua, and C. Cai, "Resonate frequency research on material characteristics of FBAR temperature sensor," in 2017 IEEE 9th International Conference on Communication Software and Networks (ICCSN), 2017: IEEE, pp. 344-348.