寬能隙元件具備高速切換與低損耗特性，然而高電壓與電流變化操作下易引發電磁干擾、誤導通與電壓尖峰等問題，影響系統穩定性。為改善此狀況，本研究提出一套結合瞬時脈波寬度調變技術之主動式閘極驅動器，可動態調整 Cascode GaN HEMT 的開關速度，兼顧切換效率與電磁干擾抑制。本論文首先探討多種主動式閘極驅動方法後，選擇可變閘極電壓法為實作基礎，並整合瞬時脈波寬度調變控制策略與簡易負電壓電路，以提升關斷期間穩定性。透過雙脈衝測試電路進行實測，並以導通能量、切換損耗與頻域分析等指標進行性能評估。實驗結果顯示，脈波寬度調變控制方法可有效調整電壓變化範圍，並具備良好的電磁干擾抑制能力。
綜合而言，本論文所提出之主動式閘極驅動器架構具有良好調變能力與系統相容性，為未來高頻、高效率功率轉換系統之驅動電路設計提供一具彈性與實用性的參考方案。

Wide Bandgap (WBG) devices, offer fast switching and low power loss. However, their high dv/dt and di/dt characteristics can result in electromagnetic interference (EMI), false turn-on events, and voltage overshoot. To address these challenges, this research proposes an Active Gate Driver (AGD) employing Temporal Pulse Width Modulation (TPWM) to dynamically control the voltage slew rate during switching in Cascode GaN HEMTs. The goal is to achieve an optimal balance between switching efficiency and EMI performance.
The proposed driver is based on the Variable Gate Voltage Mechanism(VGVM) and integrates Temporal PWM (TPWM) control along with a negative voltage shifter to ensure a stable turn-off state. Experimental validation using double-pulse testing demonstrates effective dv/dt control and significantEMI reduction. Overall, the proposed AGD presents a flexible and practicalsolution for high-speed power conversion systems

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