本論文之研究分為三個部分，第一部份是研究設計CMOS高Q值平面螺旋電感及其等效模型，第二部份是5.7GHz CMOS三級A類功率放大器，第三部分是2.4GHz CMOS單混頻器射頻收發機RFIC之設計研究。CMOS雙層並聯平面螺旋電感(TSMC 0.25m)量測後發現其Q值確實比單層螺旋電感有明顯之提升，且圈數愈多，Q值提升之現象愈明顯，且雖然雙層並聯方式會增加螺旋電感走線間之寄生電容，但不會因此使其自振頻率與感值嚴重地降低。除此之外，3D電磁模擬軟體HFSS確實可在一定的準確度下預測螺旋電感之響應。
5.7GHz CMOS三級A類功率放大器(TSMC 0.18m)之功率輸出級採用3.3V高壓電晶體，來達到輸出功率設計目標。量測結果為: 線性功率增益為10.48dB，output 為15.95dBm，OIP3為25.11dBm，PAE約11.37%。Transmit spectrum mask量測方面，最大可通過規範之PA輸出功率為10.74dBm。在802.11a 測試訊號data rate分別為24、36、48與54Mbps下，可通過規範之PA最大輸出功率分別為11.3、10.2、9.6與7.45dBm。
2.4GHz CMOS收發機射頻前端RFIC (TSMC 0.25m)包含具增益調整(AGC)之LNA、T/R switch (series架構)及二極體線性器PA，量測結果為: 接收模式之增益為12.9dB，雜訊指數為5.7dB，input 為-5.3dBm，IIP3為1.5dBm，增益可調範圍為12.93dB~2.24dB，雜訊指數可調範圍為5.7dB~10.35dB；發射模式之線性增益為28.0dB，output 為13.5dBm，OIP3為20.29dBm，PAE約為14.9%，Transmit spectrum mask量測方面，最大可通過規範之PA輸出功率為13.43dBm。
2.4GHz CMOS單混頻器射頻收發機RFIC (TSMC 0.25m) 將T/R switch、LNA、passive switching mixer與VCO整合於同一晶片，與另一PA晶片合而為一2.4GHz單混頻器射頻收發機，接收與發射模式皆利用同一個混頻器做訊號之降頻與升頻，接收與發射模式之切換則運用T/R switch。量測結果為: 接收模式之轉換增益為-0.13dB，雜訊指數為6.16dB，input 為-11.5dBm，IIP3為-5.1dBm，增益可調範圍為-0.13dB~-15.13dB，雜訊指數可調範圍為6.16dB~18.35dB。在802.11b 測試訊號各種data rate下之EVM量測值皆約為1.7%，ACPR量測值皆約為-37dBc；發射模式之轉換增益為14.8dB，output 為3.8dBm，OIP3為7.77dBm。Transmit spectrum mask量測方面，最大可通過規範之輸出功率為3.07dBm。當EVM值為12.62%時，發射機之輸出功率約為3.31dBm。

This thesis presents the design and implementation of a 2.4-GHz CMOS single-mixer transceiver (TSMC 0.25m), a 5.7-GHz PA RFIC (TSMC 0.18m), and research on the high-Q spiral inductor for wireless communication applications. It is found that the CMOS planar spiral inductor shunting two metal layers exhibits a higher quality factor than that with a single metal layer. Although the two-layer spiral inductor has a higher parasitic capacitance, the self-resonant frequency and inductance are close to those of the single-layer spiral inductor.
The 5.7-GHz CMOS three-stage class-A power amplifier (TSMC 0.18m) adopts the 3.3V high-voltage transistor to achieve the design specification. The PA exhibits a linear gain of 10.48dB, output P1dB of 15.95dBm, OIP3 of 25.11dBm and PAE of 11.37%. .The maximum allowable output power is 10.74dBm (data rate=54Mbps) The maximum allowable PA output power is 11.3, 10.2, 9.6 and 7.45dBm at the data rate of 24, 36, 48 and 54Mbps for the EVM measurement.
The 2.4GHz CMOS transceiver RF front-end RFIC (TSMC 0.25m) consists of a LNA(with AGC), a series-type T/R switch and a PA with a diode-linearizer. The CMOS transceiver exhibits a gain of 12.9dB, noise figure of 5.7dB, input P1dB of –5.3dBm, IIP3 of 1.5dBm, gain tuning range of 12.93 to 2.24dB and noise figure tuning range of 5.7 to 10.35dB for the receiving mode. For the transmitting mode, the transceiver exhibits a linear gain of 28.0dB, output P1dB of 13.5dBm, OIP3 of 20.29dBm and PAE of 14.9%. The maximum allowable output power is 13.43dBm(data rate=11Mbps) for the IEEE 802.11b transmit spectrum mask test.
The 2.4GHz CMOS single-mixer transceiver (TSMC 0.25m) integrates a T/R switch, a LNA, a passive switching mixer and a VCO into a single chip with the PA in a separated chip. The single-mixer transceiver architecture uses the same mixer in up- and down-conversion. The receiver exhibits a conversion gain of –0.13dB, noise figure of 6.16dB, input P1dB of –11.5dBm, IIP3 of –5.1dBm, gain tuning range of –0.13 to –15.13dB and noise figure tuning range of 6.16 to 18.35dB. The measured EVM and ACPR are all about 1.7% and –37dBc at the data rate of 1, 2, 5.5 and 11Mbps, respectively, for the IEEE 802.11b signal test. The transmitter exhibits a conversion gain of 14.8dB, output P1dB of 3.8dBm, OIP3 of 7.77dBm. The maximum allowable output power is 3.07dBm for the IEEE 802.11b transmit spectrum mask test (data rate = 11Mbps) with an EVM of 12.62% at an output power of 3.3dBm.

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