熱電能源轉換器可以將裝置的熱端與冷端之間的溫差藉由Seebeck effect轉換為電能輸出。本研究提出擁有雙空腔設計之熱電能源轉換晶片並利用 TSMC D35 互補式金屬氧化物半導體製程設計與製作，接著利用後製程蝕刻出5.2 μm的上空腔以及10 μm的下空腔，雙空腔設計可以提升熱電能源轉換器晶片的性能並減少後製程時間。量測結果顯示，擁有雙空腔設計之熱電能源轉換器晶片在面積為2 mm × 2 mm下，其voltage factor為2.889 mV/cm2K；power factor為0.0450 μW/cm2K2；電阻為7.2 MΩ，相較於只有下空腔設計之熱電能源轉換晶片提升了20%之性能。除此之外，本研究提出晶圓級真空封裝方法以提供熱電能源轉換晶片保護並提升熱隔絕空腔之效用。

A thermoelectric energy generator (TEG) is to convert temperature difference between the hot and cold junctions into electric energy by Seebeck effect. This thesis proposes a TEG chip with double cavity design by TSMC D35 CMOS standard process. The double cavity design with upper cavity 5.2 μm and lower cavity 10 μm by post process is shown to improve TEG performance and reduce process time. Measurement result shows that the 2 mm × 2 mm TEG chip has voltage factor 2.889 V/cm2K and power factor 0.0450 μW/cm2K2 under 7.2 MΩ resistance, which is 20% higher than the TEG chip only with lower cavity in the previous work. In addition, wafer level packaging in vacuum is proposed for the TEG chip to improve thermal isolation for circuit and device integration.

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