本論文主要是以成本較低且製程較簡單的電鍍來取代傳統的物理氣
相沉積法來製備二硒化銅銦(CuInSe2)薄膜太陽能電池之吸收層。由於電
鍍能夠大面積製作並且成本低廉等優點，此研究對於在產業界量產上有
相當大的助益。本實驗有別於以往的共電鍍方式成膜，而是分別依序電
鍍銅、銦、硒，再經過RTA熱退火處理後形成CIS吸收層，並藉由控制各
層膜的厚度使銅、銦、硒組成比為1：1：2，製備出高品質的CuInSe2主吸
收層。
電鍍薄膜的實驗中，電鍍的時間、電鍍的電位、電鍍的電流、電鍍液
的濃度、電鍍液的PH值，以及硒化的溫度和時間都是電鍍CIS薄膜實驗的
變因。首先以循環伏安法找出銅、銦、硒三個溶液的還原電位，然後再
藉由調配溶液的濃度和酸鹼值以及搭配恆電位儀來調整電鍍的時間、電
壓或電流求出各項組成最佳電鍍條件。最後控制RTA的溫度和時間來求
得熱退火處理的最佳參數來完成CIS吸收層。完成的CIS薄膜將會利用
XRD、EDS、SEM、拉曼光譜儀、四點探針及α-step等儀器量測。經過一
系列的實驗和分析結果，我們終於得到特性良好的CIS主吸收層。

In our research, we use the low cost and simple method of
electrodeposition to fabricate CuInSe2 as the major absorbent layer of thin
film solar cell instead of traditional physical vapor deposition. Because the
electrodeposition can be fabricated in big area and low cost, this research has
good benefit for industry. Instead of co-electodeposition process, we
electrodeposit Cu, In and Se step by step. After annealing treatment with RTA,
the triple-layer becomes the CuInSe2 thin film. We fabricate high quality
CuInSe2 as the major absorbent layer by controlling the thickness of Cu, In
and Se layer as the atomic ratio 1:1:2, respectively.
There are some parameters and variables such as electroplating time,
voltage and current, concentrations, PH value of chemical bath, annealing
temperature and time in our experiment. First, we use the cyclic voltammetry
to find the reduction potential of Cu, In and Se with Potentiostat and change
the variables to find the optimized conditions. Analytical instrumentations are
applied to characterize the desired thin films by XRD、EDS、SEM、Raman
spectrometer、four point probe and α-step. Finally, the optimized performance
of the major absorbent layer was found by a series of careful investigations
and analysis.

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