由於鈣鈦礦太陽能電池(Perovskite Solar Cell)在空氣中容易水解，因此在反置型(p-i-n異質結構)電子傳輸層便成了保護主動層的關鍵因素，選擇電子傳輸層的主因不單單是能階匹配，而是也須考慮穩定性與製造成本。
本研究是以聚焦式微波合成二氧化錫(Stannic Oxide,SnO2)，以二氧化錫替換PCBM([6,6]-Pheny-C61 butyric acid methyl ester)，藉此提升太陽能電池的壽命，且大幅降低製造成本。以兩種合成方式經由聚焦式微波合成二氧化錫之後，分析DLS與XRD找出其優劣與最佳濃度，再以乙醇或IPA進行替換，經由SEM分析其優劣。
最後再以溶液製成(solution process)與旋轉塗佈(spin coating)的方式將SnO2奈米顆粒應用於p-i-in異質結構之元件。在進一步以薄膜緻密性改善降低崩潰電流的產生，且利用旋轉塗佈的轉速達到最佳的厚度，以達到最佳的光電流。

The objective of this work is to obtain improved performance of perovskite solar cells (PSCs) based on Metal ETH. Metal oxide materials have been frequently used as hole transport layer, Instead of using the conventional hydro-thermo process with either water or Benzyl alcohol as solvent, microwave heating is used to rapidly synthesize SnO2 nanocrystals with tin tetrachloride and ammonium hydroxide as precursor for hydrolysis. The reaction time is much shortened and reaction temperature is much lower. These SnO2 nsnocrystals is dissolved into different solutions, such as ethanol and IPA, which is then spin coated on top of perovskite film as SnO2 film to be ETH to chose the best one , at last we find the best SnO2 layer to be solar call, efficiency increases to 11.7%, the fill factor increases to 0.75.

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