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研究生：	陳奕志 Chen, Yi-chih
論文名稱：	有機p-n接面太陽能電池效率的改善 Improved Efficiency of p-n Junction Organic Photovoltaic Cell
指導教授：	許渭州 Hsu, Wei-Chou
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	79
中文關鍵詞：	有機材料、太陽能電池
外文關鍵詞：	organic material, photovoltaic cell
相關次數：	點閱：55 下載：5
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於此篇論文中，我們使用共蒸鍍的方法應用於高電子遷移率的有機材料 Pentacene以及p-type的有機材料CuPc去製作成我們期待的高效率的太陽能電池(OPV cell)。在製作的同時我們也使用在高吸收效率的材料DCJTB加入在元件之中，使元件的吸收效率增加，進而增加其短路電流而達到提升效率的目的。
首先我們嘗試最佳化p-n有機太陽能電池的結構，其結構依序如下ITO/CuPc(Xnm)/C60(Ynm)/BCP(10nm)/Al(150nm)/LiF(80nm)。我們先調變p-type層CuPc的膜厚達到我們期待的高效率；之後再改變n-type層C60的膜厚在以達到此標準結構的最高效率，此元件的短路電流可達4.87mA/cm2，開路電壓為0.44伏，填充因數為51.2%，效率為1.09%。
接著我們選擇了最佳化的標準p-n接面太陽能電池的結構並在p-type層CuPc用共蒸鍍的方式參雜高電子遷移率的有機材料 Pentacene，藉由增加Pentacene的濃度我們可以發現元件的短路電流以及效率改變。其結構依序如下ITO/(S%)Pentacene:CuPc(25nm)/C60(50nm)/BCP(10nm)/Al(150nm)/LiF(80nm)。我們調變了在4%的參雜濃度下得到較高的短路電流以及效率；此元件的短路電流可達6.52mA/cm2，開路電壓為0.44伏，填充因數為48.3%，效率為1.39%。
最後我們在p-type層與n-type層中增加高吸收效率的DCJTB，藉由增加DCTTB的厚度我們可以改善短路電流以及效率。其結構依序如下ITO/(4%)Pentacene:CuPc(25nm)/DCJTB(Lnm)/C60(50nm)/BCP(10nm)/Al(150nm)/LiF(80nm)。我們調變了在0.5nm的參雜濃度下得到較高的短路電流以及效率；此元件的短路電流可達6.80mA/cm2，開路電壓為0.44伏，填充因數為49.0%，效率為1.47%。

In this thesis, we use the co-vaporizing skills in high mobility organic material pentacene and p-type organic material CuPc to achieve high efficiency organic photovoltaic cell (OPV cell). We also use high absorption material DCJTB into OPV cell to enhance the short-circuit current (JSC) and the efficiency.
At first, we try to optimize the best standard p-n junction organic photovoltaic cell structure whose layer in order as ITO/CuPc(Xnm)/C60(Ynm)/BCP(10nm)/ Al(150nm)/LiF(80nm), and modulate the depth of CuPc (p-type) layer X to obtain the highest efficiency, then modulate the depth of C60 (n-type) layer Y to obtain the highest efficiency of this standard device, which are 4.87 mA/cm2 of short-circuit current, 0.44 V of open-circuit voltage, 51.2% of fill factor, and 1.09% of efficiency.
Second, we choose the optimal standard structure to dope pentacene in p-type layer to enhance the mobility of CuPc. By the increasing of concentration on pentacene, we also find the decline of the short-circuit current and efficiency. This structure whose layer in order as ITO/(S%)Pentacene:CuPc(25nm)/C60(50nm)/ BCP(10nm)/Al(150nm)/LiF(80nm). We tune concentration of Pentacene around 4% in CuPc to acquire 6.52 mA/cm2 of short-circuit current, 0.44 V of open-circuit voltage, 48.3% of fill factor, and 1.39% of efficiency.
Finally, we add high absorption material DCJTB between n-type and p-type layer to enhance absorption of this device. By the increasing of thickness on DCJTB, we also find the increase of the short-circuit current and efficiency. This structure whose layer in order as ITO/(S%)Pentacene:CuPc(25nm)/DCJTB(Lnm)/C60(50nm)/ BCP(10nm)/Al(150nm)/LiF(80nm). We tune thickness of DCJTB around 0.5nm to acquire 6.80 mA/cm2 of short-circuit current, 0.44 V of open-circuit voltage, 49.0% of fill factor, and 1.47% of efficiency.

Abstract (Chinese)
Abstract (English)
Acknowledgement (Chinese)
Table Captions
Figure Captions
Chapter 1  Introduction	1
Chapter 2  Organic p-n Junction Photovoltaic Cell	3
	2-1  The photovoltaic theorems	3
	2-2  Mechanism of producing power by p-n junction	4
	2-3  Measurements of photovoltaic cells	7
	2-4  Materials of anode and cathode	8
	2-5  Design of organic photovoltaic device	9
	2-6  P-n junction organic photovoltaic cell	9
Chapter 3  Fabrication of Organic p-n Junction Photovoltaic Cell	11
	Device Fabrication Process	11
	3-1  Pre-clean ITO Glass	11
	3-2  ITO Pattern Etching	11
	3-3  UV Ozone Treatment	12
	3-4  Thermal organic vaporizing	14
Chapter 4  Experimental Results	15
	4-1  Capping layer	15
	4-2  Device Structure	16
	4-3  Modulate CuPc Depth (X nm)	18
	4-4  Modulate C60 Depth (Y nm) (X=25nm)	19
	4-5  Modulate Concentration of DCJTB in CuPc Layer (X=25nm, Y=50nm)	20
	4-6  Modulate Concentration of pentacene in CuPc Layer (X=25nm, Y=50nm)	21
		
	4-7  Modulate Thickness of DCJTB in CuPc Layer (X=25nm, Y=50nm, S=5%)	22
Chapter 5  Conclusion 	24
Reference
                                    

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校內：2009-06-27公開
校外：2009-06-27公開

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