在本論文中，我們利用有機金屬化學汽相沉積法及分子束磊晶法研製三種以砷化鎵材料為基礎之異質結構場效電晶體。藉由建構不同的表面披覆技術及蕭特基閘極金屬工程，完整的探討其對元件特性之影響，包含直流、微波、熱穩定度及可靠度特性…等。實驗上，所研製的元件展現出良好的元件特性、高溫操作能力及溫度不相依性。而這些優點顯示元件非常適合應用於高速、高頻率及高溫電子電路中。
首先，在磷化銦鎵/砷化銦鎵/砷化鎵異質結構場效電晶體上，使用硫化銨溶液對磷化銦鎵材料進行表面披覆處理，研究其對元件特性所造成的影響，並將其結果與傳統製程元件做比較。就磷化銦鎵材料而言，硫化處理能更進一步地減少表面復合速度及表面態位密度。因此，具有表面硫化披覆結構之元件在直流、微波及不同溫度環境下均顯示出良好的操作特性。
其次，探討不同溫度環境下表面披覆結構對砷化鋁鎵/砷化銦鎵/砷化鎵擬晶性高電子移動率場效電晶體元件特性所造成的影響。在製程中對元件之砷化鋁鎵蕭特基接觸層表面進行披覆處理，此步驟能夠有效清除原生氧化物，於砷化鋁鎵表面形成Ⅲ-硫鍵結物及氮化矽保護層，進而避免砷化鋁鎵表面因接觸空氣而再度氧化。實驗結果顯示，元件經過表面披覆處理之後可得到較佳的元件特性、高溫操作能力及相對較佳的可靠度及熱穩定度。
最後，為了改善變晶性高電子移動率電晶體的熱穩定度及撞擊游離效應，於研製的元件上嘗試使用不同的蕭特基閘極金屬，分析並比較其對特性的影響。從實驗結果發現，在不同電場及溫度環境下，元件之撞擊游離效應主要是由臨限活化游離能及熱載子總量所主導。因此，藉由蒸鍍蕭特基能障較大的閘極金屬時，元件之閘極空乏區域得以增大，進而抑制通道中的載子數量，並降低撞擊游離效應的產生，同時元件特性也隨之改善。此外，隨著通道電場降低或溫度增加時，元件之撞擊游離效應亦相對減小。

In this dissertation, three different GaAs-based heterostructure field-effect transistors (HFETs), grown by a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) system, were fabricated and studied. Through the surface passivation and Schottky gate metals engineering, the device characteristics including the DC, microwave, thermal stability, and reliability performance are investigated. Experimentally, the studied devices show good device characteristics, high temperature operation capability, and relatively temperature-insensitive behaviors. These advantages suggest that the proposed devices are suitable for high-speed, high-frequency, and high-temperature electronics applications.
First, the temperature-dependent characteristics of InGaP/InGaAs/GaAs HFETs, using the (NH4)2Sx solution to form the InGaP surface passivation, are studied and demonstrated. For promising wide-gap InGaP material, the surface recombination velocity and surface states are reduced by sulfur passivation. Hence, the sulfur-passivated devices show improved DC and microwave performance with wide operation region. In addition, the remarkably lower temperature variation coefficients are observed over the operating temperature ranged from 300 to 510K.
Second, the temperature-dependent characteristics of formal-passivated AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) are studied and demonstrated. Based on the surface covering with sulfur and SiNx layers, the formal passivation is employed to remove the native oxide on the AlGaAs surface and prevent the surface from oxidation against ambient atmosphere over a long period of time. It is known that, from experimental results, the formal-passivated PHEMTs exhibit better device performance, higher temperature operation capability, and relatively long-term and thermally stable characteristics.
Finally, the thermal stability performance and gate-metals-related impact ionization in metamorphic high electron mobility transistors (MHEMTs) with various Schottky gate metals are fabricated and systematically studied. From experimental results, the electric field and temperature dependences of impact ionization mechanisms in MHEMT's operation are dominated by the ionization threshold energy and hot electron population. By using the higher Schottky barrier height of gate metals, the channel depletion region beneath the gate is extended. This indeed decreases drain current in the channel and results in the suppression of impact ionization effect. Simultaneously, better DC and microwave characteristics of the studied devices are obtained. Besides, the impact ionization-induced gate current is decreased with reducing the electric field and/or increasing the temperature.

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