在邏輯元件的發展逼近物理極限的情形下，現有的半導體製程技術或架構已陸續面臨許多問題，傳統製程技術的改良或新材料和製程架構的研發便成為延續摩爾定律的要務，而在眾多製程中，熱處理技術亦有著舉足輕重的地位，因此，本論文著重於研究半導體製程中不可或缺的熱處理過程，並探討其對P型矽鍺化物以及金屬閘極的影響。在本論文中，我們使用了不同的熱處理方式分別對金屬-矽鍺接面及金屬閘極進行退火，並比較其阻值及電性的差異。微波退火及雷射退火因加熱的方式與傳統退火不同，將有機會達到較低的熱預算與較佳的熱均勻性。
第一部分，在熱處理對P型矽鍺化物的實驗中，我們發現在鎳矽鍺化合物中使用微波及雷射退火都能在較低熱預算下，達到理想的阻值表現，而傳統的快速熱退火製成溫度較高容易引起擴散，導致團聚發生，進一步影響到接面阻值;而在熱處理對鈦矽鍺化合物下，雷射退火能同時保持著低熱預算及理想的阻值，而微波退火因無法將鈦矽鍺化合物轉換成較低阻值的組成相，故無法使阻值進一步降低。第二部分，對TiN/Al;Ti/TiN/HfO2/Si substrate MOS-Cap 進行不同參數的微波及RTA金屬沉積後退火的處理，並分別在物性及電性上做分析比較，同時也比較在不同熱處理條件下，Al:Ti金屬閘極的混和比例對電性及功函數的影響。
實驗結果顯示，鋁含量較高的試片中，會有較低的平帶電壓。另一方面，不論鋁鈦含量比，經快速熱退火後的電容，會因為金屬的擴散、介面氧化層的增厚導致平帶電壓的偏移。而使用微波退火的樣品中，相較於快速熱退火，得到了較少的平帶電壓偏移、氧化層缺陷電荷以及較小的功函數調變量。
本論文探討以較低熱預算的退火方式，來達到P型矽鍺化物理想的阻值，另外，於金屬閘極MOS-Cap方面，能減少傳統熱退火可能帶來的負面影響，因此，對於需要低熱預算的前段製程將會有一定的吸引力。

When the feature size of logic devices is scaling down toward 10 nm and beyond, current manufacturing techniques are facing a variety of challenges due to higher processing requirement. Improvement on current techniques or development of novel technology thus becomes important to keep the Moore’s law alive. Furthermore, thermal process plays an important role in series semiconductor process flows. This thesis focuses on the indispensable thermal process in semiconductor process flow and discusses its effect on P-type silicon-germanium and metal gate.
In this thesis, we use different annealing treatments on metal / silicon-germanium interface layer and metal gate, thus compare the electrical characteristic, many kinds of crystallinity and surface roughness. Microwave and laser annealing are unlike conventional RTA such as heating mechanism and heating transfer efficiency, which will have the chance to achieve lower thermal budgets and better thermal uniformity.
In the first part, in the thermal treatment of P-type silicon-germanium experiments, we found that using microwave and laser annealing in nickel / silicon-germanium compounds can achieve a minimum resistance performance at lower thermal budgets, while traditional RTA is easy to cause the diffusion, resulting in the occurrence of compound agglomeration, and further degrade the resistance value. And in the thermal treatment of titanium / silicon-germanium compounds, the laser annealing has the ability to maintain the low thermal budget and the ideal resistance performance, while the microwave annealing isn’t able to convert titanium / silicon-germanium compounds into a lower resistance composition phase by XRD analysis, so that the resistance won’t be further reduced.
In the second part, the metal deposition TiN / Al / TiN / HfO2 / Si substrate MOS- Capacitance was conducted to different parameters of microwave and RTA, and were analyzed and compared in physical and electrical properties. Thus study the influence of the mixing ratio of Al/Ti metal gate on the electrical properties and effective work function under different thermal treatment conditions.
The experimental results show that the higher aluminum content samples will have a lower flat-band voltage. On the other hand, regardless of the aluminum and titanium content ratio, the capacitor after the rapid thermal annealing will cause flat voltage shift due to the diffusion of metal and the thicker interface oxide layer. However,compare to RTA result, the microwave annealing samples, resulting in less flat-band voltage shift,oxide trap charge and lead the few variation of the effective work function.
In this thesis, the lower thermal budget annealing process is used to achieve the ideal resistance performance of P-type silicon-germanium, and will reduce the negative effect of traditional thermal annealing on field of MOS-Capacitance. Therefore, the requirement for low thermal budget annealing at the front-end process will be a certain attraction.

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