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研究生： 許銘哲
Hsu, Ming-Che
論文名稱： 應用於K-band之低功耗高靈敏度介電材料檢測系統設計
Low Power and High Sensitivity Dielectric Material Detection System Design for K-band
指導教授： 楊慶隆
Yang, Chin-Lung
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2024
畢業學年度： 112
語文別： 中文
論文頁數： 115
中文關鍵詞： K-band 、互補式開口環形共振器 、介電材料檢測 、低功耗 、高靈敏度
外文關鍵詞： complementary split ring resonator, dielectric material detection, high sensitivity, K-band, low power consumption
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    • 本研究提出了一低功耗、高靈敏度的微波介電材料感測系統，針對系統和感測器進行了優化，最終將其整合成一介電材料量測系統。在系統優化方面，我們設計了一低功耗的壓控振盪器，透過在考畢子架構壓控振盪器中電晶體交叉耦合對的源極端增加了負實部和正虛部的負載，利用這種負載特性和電晶體的寄生電容之負載特性，使壓控振盪器轉導值的轉移函數的分母趨近於零，以提升整體電路之轉導值。同時，我們採用考畢子架構提升壓控振盪器的輸出擺幅，減少了熱雜訊對相位雜訊的影響，在減低電路功耗的同時，保持了一定的訊號穩定性，整體電路消耗功率經計算為1.4 mW。
    在感測器優化方面，我們透過多個互補式環形共振腔的相互耦合，並考慮待測物放置時對每個共振腔之間內部耦合的影響，將各個共振腔之間的內部耦合設計為弱耦合之形式以提升感測器之靈敏度。同時，透過結合基板整合波導的傳輸結構，改變原先微帶線傳輸結構之傳輸模態，以提升傳輸線與感測器之間的外部耦合，使電場能更集中於感測器內部，進一步提高感測器的靈敏度，該感測器結構相較於其餘同頻帶結構，在介電係數為1至10的介電材料中靈敏度約提升88.1 %。
    在系統整合方面，透過結合前述兩子電路，實現了一同時具有低功耗與高靈敏度之感測系統，並通過與網路分析儀的量測結果進行比對，證明了系統整合的可行性。

    This paper proposes a low-power, high-sensitivity microwave dielectric material sensing system. In terms of system optimization, a low-power voltage-controlled oscillator (VCO) is designed. The VCO utilizes transistor cross-coupling pairs in a Colpitts architecture, with negative real and positive imaginary load additions at the source terminal. This exploit of load characteristics, coupled with parasitic capacitance of the transistor, drives the transfer function's denominator toward zero, enhancing the overall transconductance. Simultaneously, a Colpitts architecture is employed to boost the VCO's output swing, minimizing the impact of thermal noise on phase noise. This not only reduces power consumption but also maintains a certain level of signal stability, with a calculated overall circuit power consumption of 1.4 mW. In sensor optimization, multiple complementary split-ring resonators (CSRRs) are employed. The internal coupling between the resonators is intentionally weakened to enhance sensor sensitivity. Additionally, by integrating a substrate-integrated waveguide (SIW) transmission structure with the sensor structure, improving the external coupling between sensor and transmission line. Compared to other structures in the same frequency band, the sensitivity of this sensor structure is increased by approximately 88.1% for dielectric materials with a permittivity ranging from 1 to 10.
    Concerning system integration, the combination of the aforementioned two sub-circuits realizes a sensing system with simultaneous low power consumption and high sensitivity. A comparison with measurements from a network analyzer demonstrates the feasibility of system integration.

    摘要 I Extended Abstract II 誌謝 X 目錄 XII 表目錄 XVI 圖目錄 XVII 縮寫總表 XXI 第一章、 緒論 1 1.1 研究方向與動機 1 1.2 平面微波共振感測器應用與系統 2 1.2.1 平面微波共振感測器應用 2 1.2.2 微波平面共振感測系統探討與比較 3 1.3 文獻回顧 5 1.3.1 低功耗系統設計 5 1.3.2 應用於K-band之高靈敏度微波感測器設計 8 1.4 論文架構 10 1.5 研究貢獻 12 第二章、 壓控振盪器與平面微波共振感測器 13 2.1 壓控振盪器概述 13 2.1.1 起振原理 14 2.1.2 振盪器特性參數 15 2.2 平面微波共振感測器 19 2.2.1 平面微波共振感測器概述 19 2.2.2 激發微波平面式共振腔之微帶線設計 19 2.2.3 開口式環形共振腔與互補式開口環形共振腔 21 2.2.4 開口環形共振腔(Split Ring Resonator) 22 2.2.5 互補式開口環形共振腔(Complementary Split Ring Resonator) 24 2.2.6 微波平面共振腔感測原理 24 第三章、 低功耗壓控振盪器設計 27 3.1 原理設計 27 3.1.1 起振原理 27 3.1.2 Colpitts架構振盪器 27 3.2 電路架構 28 3.2.1 整體電路架構 29 3.2.2 Gm-boosting架構設計 30 3.2.3 電路架構設計 31 3.2.4 設計流程 33 3.3 模擬結果與預計規格 34 3.3.1 模擬結果 34 3.3.2 預計規格 36 3.4 量測考量 37 3.4.1 佈局與鎊線效應 37 3.4.2 量測考量 38 3.5 量測結果 39 3.6 文獻比較與討論 42 第四章、 高靈敏度平面微波感測器設計 44 4.1 靈敏度分析 44 4.1.1 單一互補式開口環形共振腔 44 4.1.2 使用CSRR耦合結構提升靈敏度 45 4.1.3 使用多個CSRR耦合結構提升靈敏度 46 4.2 高靈敏度平面微波感測器設計 46 4.2.1 耦合係數與靈敏度 46 4.2.2 感測器設計 48 4.3 靈敏度優化 51 4.3.1 透過SIW結構提升靈敏度 51 4.3.2 優化感測器設計 52 4.4 感測系統考量 55 第五章、 實驗設置與量測結果 56 5.1 高靈敏度感測器驗證 56 5.1.1 實驗設置 56 5.1.2 微帶線傳輸結構之感測結果 57 5.1.3 結合基板整合波導(SIW)之感測結果 59 5.2 系統整合與驗證 63 5.2.1 實驗設置 63 5.2.2 量測結果 64 第六章、 結論與未來展望 68 6.1 結論 68 6.2 未來展望 69 參考文獻 70 附錄A、 應用於微流體感測技術之24 GHz振盪器負載設計 76 A.1 下線電路之全新設計或改版說明 76 A.2 架構簡介 76 A.2.1 等效電磁模型 76 A.2.2 感測模型： 77 A.2.3 高靈敏度架構： 78 A.2.4 提升品質因數之架構： 78 A.3 模擬結果 80 A.3.1 感測器架構設計 80 A.3.2 模擬設置 81 A.3.3 模擬結果 82 A.4 實測結果 83 附錄B、 應用於K band 之雙槽亞閾值D類VCO設計 85 B.1 全新設計或改版說明 85 B.2 原理及架構說明 85 B.2.1 Class-D架構振盪器設計 [62] 86 B.2.2 Tail filter設計 90 B.3 電路架構設計與模擬結果 91 B.4 量測結果 92

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