矽是目前發展最為廣泛之半導體材料，普遍應用在現代微電子領域，尤其矽塊材積體電路產業在台灣經濟更是扮演著著舉足輕重的角色。隨著摩爾定律發展，在2016年，矽塊材積體電路已經微縮至14奈米，在未來持續發展下預計會到達7奈米甚至是以下。當矽塊材微縮至個位數奈米等級時，也就是量子侷限效應開始變得顯著，開始稱之為“矽量子點”或“矽奈米晶”。不同於矽塊材本身為間接能隙導致其發光效率不良，矽奈米晶因為其電子電洞對的波函數開始重疊(區域化)，因此發光效率可以大大的提升。矽奈米晶開始應用於發光元件、太陽能電池，光偵測器等等。在本論文中我們研究矽奈米晶嵌入於富矽氧化物薄膜的光電特性，並搭配離子源輔助濺鍍。接著設計富矽氧化物/二氧化矽超晶格多層結構，研究超晶格結構的發光元件、記憶體元件的光電特性。

矽奈米晶嵌入於富矽氧化物
藉由離子束能量輔助濺鍍沉積富矽氧化物薄膜，經由退火之相分離形成矽奈米晶。藉由穿透式電子顯微鏡與X光繞射分析，觀察到調變離子束能量可以改善矽奈米晶的形成。當離子束能量增加時，矽晶的密度和尺寸會增加，同時，富矽氧化物薄膜的光致發光也有顯著的增加。此發光機制是由矽奈米晶的量子限制效應所造成。
矽奈米晶/二氧化矽超晶格發光元件：二氧化矽層的影響
這裡主要焦點在矽奈米晶/二氧化矽超晶格發光元件內的二氧化矽的影響。使用離子束輔助濺鍍每一層二氧化矽層。藉由穿透式電子顯微鏡觀察氬離子束轟擊在二氧化矽層具有改善二氧化矽層和富矽氧化物層的介面，並且沒有影響富矽氧化物內的矽奈米晶形成。二氧化矽折射係數的增加是由於密度提升所導致。製作成元件後發現發光效率提升了一倍。根據電荷儲存實驗觀察，發光效率的提升是由於二氧化矽層的注入能障增加，因而改善電荷流失率。
矽奈米晶/二氧化矽超晶格發光元件：富矽氧化物層的影響
這裡聚焦在使用氫離子源改善發光元件內的富矽氧化物的矽奈米晶形成，提高元件之發光效率。每一層富矽氧化物均受到氫離子束轟擊，矽奈米經的密度增加並且奈米尺度的介面粗糙度也有些微增加。福勒-諾德漢穿隧(Fowler-Nordheim tunneling, FN-tunneling)是載子的主要傳輸機制。藉由氫離子束，奈米粗糙化介面形成，因此降低F–N穿隧能障，同時也鈍化掉非輻射複合中心Pb。因此提高了元件的發光效率與最大輸出功率。效率提升了10倍並且啟動電壓明顯的下降。
矽奈米晶/二氧化矽超晶格記憶體元件
使用超晶格結構製作成記憶體元件，同樣地，氫離子轟擊富矽氧化物層。藉由穿透式電子顯微鏡和X光光電子能譜儀，觀察發現矽奈米晶密度和氧含量增加。記憶體視窗從16V增加到25.6V，且其漏電流顯著減少兩個級數。電荷儲存特性明顯改善增加，在外插約至11天左右，電荷量仍然維持86%。藉由光致發光分析，可推測電荷儲存時間的改善主要是受矽奈米晶、矽氧比和發光中心之間的變化所主宰控制。

This thesis focus on the progress of Si NCs embedded in Si-rich oxide (SRO) in SRO/SiO2 superlattices application for LED and memory device by employing ion-beam assisted sputtering (IBAS) system. The chapters are organized as follows:
In chapter 2, this study exploits the material and optical properties of silicon nanocrystals (Si NCs) embedded SRO films prepared by IBAS. Transmission electron microscopy and grazing-angle X-ray diffraction revealed that the IBAS improved the formation of the Si NCs in the SRO films. The size and density of Si NCs were dominated by IBAS with varying anode voltage. The photoluminescence for the SRO films was enhanced, which was associated with the quantum confinement effect of the Si NCs. The impact of Ar ion beam on the SRO films were discussed. The results exhibited the promising for development of highly efficient Si-based optoelectronic devices.
In chapter 3, this study investigated the electroluminescence (EL) properties of Si-rich oxide (SRO)/SiO2 superlattices light emitting devices (LEDs). Each SiO2 layer of the superlattices was prepared by using argon ion beam assisted sputtering (IBAS). Transmission electron microscopy revealed that the treatment of Ar ion beams on the SiO2 layers did not affect the size or distribution of the Si NCs in the SRO layers, but enhanced the thin-film quality of the SiO2 and formed a clear SiO2/SRO interface. The refractive index of SiO2 was increased by IBAS because of an increase in the density of SiO2. The EL efficiency was doubled for the IBAS device compared with that of a reference device. According to the retention property, the enhanced EL intensity of the IBAS device was ascribed to lower the charge loss rate through enhancing injection barrier of SiO2. The mechanism of the EL enhancement of the IBAS LED was discussed.
In chapter 4, this paper presents a novel method for enhancing the electroluminescence (EL) efficiency of ten-period silicon-rich oxide (SRO)/SiO2 superlattice–based light-emitting diodes (LEDs). A hydrogen ion beam (HIB) was used to irradiate on each SRO layer of the superlattices to increase the interfacial roughness in nanoscale and density of the Si nanocrystals (Si NCs). Fowler–Nordheim (F–N) tunneling was the major mechanism for injecting the carriers into the Si NCs. The barrier height of the F–N tunneling was lowered by forming the nano-roughened interface and nonradiative Pb centers were passivated through the HIB treatment. Additionally, the reflectance of the LEDs was lowered because of the nano-roughened interface. These factors considerably increased the slope efficiency of EL and maximum output power of the LEDs. The lighting efficiency increased by an order of magnitude, and the turn-on voltage decreased considerably. This study established an efficient approach for obtaining bright Si NCs/SiO2 superlattice-based LEDs.
In chapter 5, This study examined the material and optical properties of Si nanocrystals (NCs) embedded in Si-rich oxide (SRO) films prepared through ion beam-assisted sputtering (IBAS). Transmission electron microscopy and grazing-incidence X-ray diffraction revealed that IBAS improved the formation of the Si NCs in the SRO films. The size and density of Si NCs were predominantly controlled by IBAS with varying anode voltage. The photoluminescence levels of the SRO films were enhanced, which was associated with the quantum confinement effect of the Si NCs. The benefits of an Ar ion beam used on the SRO films are discussed in this paper. The results indicate that IBAS is a promising approach for the development of highly efficient Si-based optoelectronic devices.
In chapter 6, the Al-doped ZnO (AZO) films, which is an important transparent and conducting electrode in optoelectronic devices, are prepared using ion-beam assisted sputtering (IBAS) with substrate heating. Further reduction of the resistivity and an increase in the transmittance of AZO are required for optimized optoelectronic devices. A low-energy Ar ion-beam with a kinetic energy between 0-50 eV is used. The electrical and optical properties of IBAS AZO films are studied in terms of the substrate temperature (RT-300 ℃). The results show that the resistivity of AZO films decreases as the amount of chemisorbed oxygen and O-Zn bonds decrease, which increases the number of oxygen vacancies. The transmittance in the visible region is increased because of the high crystallinity of AZO films. The resistivity of IBAS AZO deposited at 300 ℃ with an anode voltage of 30 V is reduced to 5.6 × 10-3 Ω-cm because of the high carrier concentration and mobility. This shows that ion-beam treatment changes the surface/adatom reaction during the growth of AZO films, which is similar to the effect of substrate heating. The electrical and optical properties of the AZO films that depend on the ion-beam energy and substrate temperature are discussed.

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