本論文為設計一個具有抑制電磁干擾（EMI）之新型結構平面電感，此新型結構電感使用特殊的繞曲佈局方法，呈現出六個子線圈並具有交錯排列的反相磁偶極，並使得三對互相相反方向的磁偶極抵消附近其他電感器的干擾磁場。螺旋型電感元件目前廣泛應用於射頻電路中，然而，傳統螺旋型電感元件會將其承載頻率之能量以磁力線的方式向外打出形成附件電路元件之耦合雜訊。此現象會嚴重造成周遭電路的工作性能下降，特別是對於與功率放大器（PA）和振盪器之單晶片系統，必須要重視考量此議題之影響。
為了實現抑制電磁干擾之目的，於過去的文獻中已經提出了8字型電感元件之特殊繞曲佈局方式。此特殊佈局方式之特徵為可以具有交錯排列的一對子線圈且方向相反之磁偶極以達到磁場相互抵消的功效。然而，由於此8字型電感元件佈局並未考量多方向上之對稱性，故僅可消除單一方向上之電磁干擾。在本論文中提出新型結構電感，比起上述之8字型結構電感考量更多方向上之對稱性，使得此新型結構電感擁有更全方位的抑制電磁干擾效果。
在本研究中，此新型結構電感與S波段之壓控振盪器以台積電所提供之TSMC 0.18 μm CMOS製程技術中實現。當壓控振盪器之工作頻率為2.3 GHz且電感元件金屬線邊緣到金屬線邊緣間距為50微米之條件下，使用此新型結構電感植入壓控振盪器比起將傳統型結構電感入壓控振盪器擁有高出18~22 dB之電磁耦合串音抑制量；若將此間距縮小為10微米之條件下，此新型結構電感植入壓控振盪器比起將傳統型結構電感入壓控振盪器擁有高出甚至20~40 dB之電磁耦合串音抑制量。

This thesis presents a new structure of planar inductor with a function of electromagnet interference (EMI) suppression. This kind of inductors uses a special wounded layout methodology to form six sub-coils with anti-phase magnetic dipoles in stagger arrangement, such that the generated magnetic field interference to the nearby inductor components can be reduced. Spiral inductors have been widely used in RF circuits. Generally, conventional spiral inductors will spread out the electromagnet energy by way of magnetic flux to the nearby circuit elements such that the noises will be resulted. This phenomenon will cause the performance degradations of nearby circuits, especially, for the system-on-chip (SOC) integrated circuits which have power amplifiers and oscillators. Therefore, how to suppression the EMI effect becomes an important issue.
In order to suppress the EMI effects, a kind of inductors named as 8-shape inductors has been proposed in some previous papers. Such kind of 8-shape inductors have an even-number of sub-coils to give a pair of anti-phase magnetic dipole moments to make the magnetic flux linkages be mutually canceled. However, the 8-shape inductors do not consider the structure symmetry perfectly. Therefore, in a real situation, the interference usually strongly depends on the direction of nearby component’s location. Its suppression capability exhibits a direction dependence feature. The proposed structure of planar inductors in this thesis has a better structure symmetry feature as compared with that of the 8-shape inductors, so that the proposed inductors will have better omnidirectional EMI suppression capability.
In this thesis, an inductor with this new structure is also integrated into an S-band voltage-controlled oscillator (VCO) by TSMC 0.18 μm CMOS technology. With an operation frequency of 2.3 GHz and an edge-to-edge space of 50 μm between metal lines of this proposed inductor and a nearby spiral inductor, the VCO integrated with this proposed inductor provides a crosstalk suppression of more than 18-22 dB as compared with a VCO with a conventional spiral inductor. Even when the space between metal lines becomes 10 μm, the VCO integrated with this proposed inductor can provide a crosstalk suppression of more than 20-40 dB.

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