本研究使用溫度波分析法量測由原子層沉積氧化鋁薄膜之熱傳導係數，找出不同的薄膜厚度所適合的溫度振盪頻率，並針對溫度、晶格排列、厚度等可能對薄膜熱傳導係數造成影響的因素進行研究。
經量測後發現在常溫下，50 nm 和 100 nm 氧化鋁薄膜溫度振盪頻率適用的頻率分別為 0.011 Hz 和 0.015 Hz；熱傳導係數分別為 1.76 (W/mK)、1.97 (W/mK)，將量測的數據與文獻比較，在驗證實驗方法準確後，本文對不同厚度之氧化鋁薄膜進行研究分析。將薄膜進行 1000 °C 高溫退火，使其從非晶相轉換成α 相，量測後發現 α 相與非晶相氧化鋁薄膜之熱傳導係數有著約 10 %的差距。將溫度變化範圍控制在 290K~360 K，發現任何厚度和晶格排列的氧化鋁薄膜的熱傳導係數會隨著溫度上升而增加，由研究結果中可發現到透過不同溫度、晶格排列、厚度對薄膜熱傳導係數皆有著顯著的影響。

This study uses temperature wave analysis method to measure the thermal conductivity of aluminium oxide thin films by atomic layer deposition. It aims to identify suitable temperature oscillation frequencies for different film thicknesses and investigates factors such as temperature, crystal structure, and thickness that may affect the thermal conductivity of the films.
After measurement, it is found that at room temperature, the temperature oscillation frequencies of the 50 nm and 100 nm aluminium oxide thin films are 0.011 Hz and 0.015 Hz, respectively. The thermal conductivities are measured as 1.76 W/m·K for the 50 nm film and 1.97 W/m·K for the 100 nm film. These values are compared with literature data to validate the experimental methods.
The films are subjected to high-temperature annealing to transform from the amorphous phase to the α phase. Measurements reveal an approximately 10% difference in thermal conductivity between α phase and amorphous aluminium oxide thin films. Controlling the temperature range from 290 K to 360 K, it is observed that the thermal conductivity of aluminium oxide thin films, regardless of thickness and crystal structure, increases with temperature. The results indicate significant influences of temperature, crystal structure, and thickness on the thermal conductivity of the films.

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